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5961-01-446-6889

20 Products

56-102934-01

WAFER,THERMAL

NSN, MFG P/N

5961014466889

NSN

5961-01-446-6889

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56-102934-01

WAFER,THERMAL

NSN, MFG P/N

5961014466889

NSN

5961-01-446-6889

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

III END ITEM IDENTIFICATION: RADAR WARNING SYSTEM, AN/ANL-68A(V)-3, LITTON SYSTEMS INC

JANTX1N5305

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464891

NSN

5961-01-446-4891

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JANTX1N5305

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464891

NSN

5961-01-446-4891

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5305-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.85 MAXIMUM KNEE VOLTAGE

1N5297-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

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1N5297-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

MFG

COMPENSATED DEVICES INC

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5297-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.35 MAXIMUM KNEE VOLTAGE

6012597-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

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6012597-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5297-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.35 MAXIMUM KNEE VOLTAGE

JANTX1N5297

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

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JANTX1N5297

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464902

NSN

5961-01-446-4902

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5297-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.35 MAXIMUM KNEE VOLTAGE

JANTX1N5309

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464905

NSN

5961-01-446-4905

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JANTX1N5309

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014464905

NSN

5961-01-446-4905

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5309-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.25 MAXIMUM KNEE VOLTAGE

BA191-20-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465461

NSN

5961-01-446-5461

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BA191-20-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465461

NSN

5961-01-446-5461

MFG

EDAL INDUSTRIES INC.

Description

MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.445 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 NOMINAL FORWARD VOLTAGE, DC

D22-5014-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465461

NSN

5961-01-446-5461

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D22-5014-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465461

NSN

5961-01-446-5461

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.445 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 NOMINAL FORWARD VOLTAGE, DC

2N1872A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465465

NSN

5961-01-446-5465

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2N1872A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465465

NSN

5961-01-446-5465

MFG

SOLID STATE DEVICES INC.

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL GATE VOLTAGE, DC

G554043-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465465

NSN

5961-01-446-5465

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G554043-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465465

NSN

5961-01-446-5465

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL GATE VOLTAGE, DC

BAR14-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465493

NSN

5961-01-446-5493

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BAR14-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465493

NSN

5961-01-446-5493

MFG

SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV

1450508-3

TRANSISTOR

NSN, MFG P/N

5961014465509

NSN

5961-01-446-5509

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1450508-3

TRANSISTOR

NSN, MFG P/N

5961014465509

NSN

5961-01-446-5509

MFG

SENSOR AND ANTENNA SYSTEMS LANSDALE INC.

MJE8502

TRANSISTOR

NSN, MFG P/N

5961014465550

NSN

5961-01-446-5550

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MJE8502

TRANSISTOR

NSN, MFG P/N

5961014465550

NSN

5961-01-446-5550

MFG

FREESCALE SEMICONDUCTOR INC.

OM1445SA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465600

NSN

5961-01-446-5600

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OM1445SA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465600

NSN

5961-01-446-5600

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL

Description

NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS

M5X3111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465689

NSN

5961-01-446-5689

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M5X3111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014465689

NSN

5961-01-446-5689

MFG

AEROFLEX / METELICS INC.

007-00418-0000

TRANSISTOR

NSN, MFG P/N

5961014466067

NSN

5961-01-446-6067

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007-00418-0000

TRANSISTOR

NSN, MFG P/N

5961014466067

NSN

5961-01-446-6067

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00338-0000

TRANSISTOR

NSN, MFG P/N

5961014466071

NSN

5961-01-446-6071

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007-00338-0000

TRANSISTOR

NSN, MFG P/N

5961014466071

NSN

5961-01-446-6071

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

SCFS7500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014466131

NSN

5961-01-446-6131

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SCFS7500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014466131

NSN

5961-01-446-6131

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 7500.0 MAXIMUM REVERSE VOLTAGE, PEAK

2PFF8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014466133

NSN

5961-01-446-6133

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2PFF8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014466133

NSN

5961-01-446-6133

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD

44-105244-02

TRANSISTOR

NSN, MFG P/N

5961014466873

NSN

5961-01-446-6873

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44-105244-02

TRANSISTOR

NSN, MFG P/N

5961014466873

NSN

5961-01-446-6873

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

III END ITEM IDENTIFICATION: RADAR WARNING SYSTEM, AN/ANL-68A(V)-3, LITTON SYSTEMS INC