My Quote Request
No products added yet
5961-01-579-0701
20 Products
LM117H ROHS
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790701
NSN
5961-01-579-0701
LM117H ROHS
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015790701
NSN
5961-01-579-0701
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: THREE THERMINAL ADJUSTABLE REGULATOR
SPECIAL FEATURES: OUTPUT IS SHORT CIRCUIT PROTECTED, ADJUSTABLE OUTPUT DOWN TO 1.2V
Related Searches:
91846897
TRANSISTOR
NSN, MFG P/N
5961015790778
NSN
5961-01-579-0778
MFG
THALES
Description
III END ITEM IDENTIFICATION: TURQUIE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: P CHANNEL ENHANCEMENT MODE VERTICL DMOS FETS
SPECIAL FEATURES: LOW THRESHOLD, HIGH INPUT IMPEDANCE, LOW INPUT CAPACITANCE, FAST SWITCHING SPEEDS, LOW ON RESISTANCE, LOW INPUT AND OUTPUT LEAKAGE
Related Searches:
TP2510N8-G
TRANSISTOR
NSN, MFG P/N
5961015790778
NSN
5961-01-579-0778
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: TURQUIE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: P CHANNEL ENHANCEMENT MODE VERTICL DMOS FETS
SPECIAL FEATURES: LOW THRESHOLD, HIGH INPUT IMPEDANCE, LOW INPUT CAPACITANCE, FAST SWITCHING SPEEDS, LOW ON RESISTANCE, LOW INPUT AND OUTPUT LEAKAGE
Related Searches:
DT2018P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015791737
NSN
5961-01-579-1737
MFG
HEROTEK INC.
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
FEATURES PROVIDED: LOW NOISE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TUNNEL DIODE DETECTORS
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM CW POWER
SPECIAL FEATURES: POSITIVE OUTPUT POLARITY; 2 - 18 GHZ FREQUENCY RANGE; 3:5:1 VSWR; -55 TO 100 C OPERATING TEMP; APLLICATIONS INCLUDE RADARS, TRANSMITTERS, POWER AND SIGNALING MONITORING AND MISSILE GUIDANCE SYSTEMS
TERMINAL TYPE AND QUANTITY: 1 CONNECTOR, COAXIAL
Related Searches:
S20410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015791770
NSN
5961-01-579-1770
MFG
MICROSEMI CORP-COLORADO
Description
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2448-0200
TRANSISTOR
NSN, MFG P/N
5961015792649
NSN
5961-01-579-2649
MFG
CONTROL TECHNIQUES
Description
III END ITEM IDENTIFICATION: UNIDRIVE SP4403
SPECIAL FEATURES: IGBT
Related Searches:
MJ15016G
TRANSISTOR
NSN, MFG P/N
5961015795547
NSN
5961-01-579-5547
MFG
ON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HIGH POWER
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: EF2000 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DISCRETE PNP TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.815 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TYPE TO-204(TO-3);CONTAINER TYPE-TRAY;QUANTITY 100;DESIGNED FOR HIGH POWER AUDIO,STEPPING MOTOR AND LINEAR APPLICATIONS;USED IN POWER SWITCHING CIRCUITS-RELAYS OR SOLENOID DRIVERS,DC TO DC CONVERTERS,INVERTERS OR INDUCTIVE LOAD
SPECIAL TEST FEATURES: PB-FREE
TERMINAL TYPE AND QUANTITY: 2 PIN
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 70.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
MJ15015G
TRANSISTOR
NSN, MFG P/N
5961015795550
NSN
5961-01-579-5550
MFG
ON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HIGH POWER
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: EF2000 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DISCRETE NPN TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.815 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TYPE TO-204(TO-3);CONTAINER TYPE-TRAY;QUANTITY 100;DESIGNED FOR HIGH POWER AUDIO,STEPPING MOTOR AND LINEAR APPLICATIONS;USED IN POWER SWITCHING CIRCUITS-RELAYS OR SOLENOID DRIVERS,DC TO DC CONVERTERS,INVERTERS OR INDUCTIVE LOADS
SPECIAL TEST FEATURES: PB-FREE
TERMINAL TYPE AND QUANTITY: 2 PIN
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 70.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
91725879
TRANSISTOR
NSN, MFG P/N
5961015795637
NSN
5961-01-579-5637
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RF MOSFET POWER TRANSISTOR, 5W, 28V, 100-500 MHZ
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.580 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.815 INCHES MINIMUM AND 0.825 INCHES MAXIMUM
OVERALL WIDTH: 0.144 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 14.4 WATTS MAXIMUM PEAK TURN-OFF POWER DISSIPATION
SPECIAL FEATURES: N-CHANNEL ENHANCEMENT MODE DEVICE; 100-500 MHZ; DMOS STRUCTURE; LOWER NOISE FLOOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
UF2805B
TRANSISTOR
NSN, MFG P/N
5961015795637
NSN
5961-01-579-5637
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RF MOSFET POWER TRANSISTOR, 5W, 28V, 100-500 MHZ
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.580 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.815 INCHES MINIMUM AND 0.825 INCHES MAXIMUM
OVERALL WIDTH: 0.144 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 14.4 WATTS MAXIMUM PEAK TURN-OFF POWER DISSIPATION
SPECIAL FEATURES: N-CHANNEL ENHANCEMENT MODE DEVICE; 100-500 MHZ; DMOS STRUCTURE; LOWER NOISE FLOOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
99136032
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015796137
NSN
5961-01-579-6137
MFG
THALES
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: BZX84 SERIES VOLTAGE REGULATOR DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C56
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015796137
NSN
5961-01-579-6137
MFG
PHILIPS SEMICONDUCTORS INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: BZX84 SERIES VOLTAGE REGULATOR DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
99189097
TRANSISTOR
NSN, MFG P/N
5961015796505
NSN
5961-01-579-6505
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.9 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
BFR93AW ROHS
TRANSISTOR
NSN, MFG P/N
5961015796505
NSN
5961-01-579-6505
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.9 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
SRP600G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015796615
NSN
5961-01-579-6615
MFG
VISHAY ANGSTROHM PRECISION INC DBA VISHAY ANGSTROHM
Description
III END ITEM IDENTIFICATION: IOL CODE ASSEMBLY, WIRE, DIO, ANTI SURFACE WARFARE IMPROVEMENT PROGRAM (AIP)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST SWITCHING FAST RECTIFIER
SPECIAL FEATURES: FAST SWITCHING FOR HIGH EFFECIENCY; LOW FORWARD VOLTAGE DROP; LOW LEAKAGE CURRENT; HIGH FORWARD CURRENT OPERATION; HIGH FORWARD SURGE CAPABILITY; SOLDER DIP 260 DEG C; COMPONENT IN ACCORDANCE TO ROHS 2002/95/EC AND WEEE 2002/96/EC; MAX REPETITIVE PEAK
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
~1: REVERSE VOLTAGE IS 400; MAX RMS VOLTAGE IS 280; MAX DC BLOCKING VOLTAGE IS 400
Related Searches:
99218880
TRANSISTOR
NSN, MFG P/N
5961015796640
NSN
5961-01-579-6640
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN GENERAL PURPOSE TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-323
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: APPLICATIONS INCLUDE LOW NOISE STAGES IN TAPE RECORDERS, HI-FI AMPS AND OTHER AUDIO-FREQUENCY EQUIPMENT
TERMINAL LENGTH: 0.6 MILLIMETERS MINIMUM AND 0.8 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 45.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING
~1: VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
BC850CW ROHS
TRANSISTOR
NSN, MFG P/N
5961015796640
NSN
5961-01-579-6640
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN GENERAL PURPOSE TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-323
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: APPLICATIONS INCLUDE LOW NOISE STAGES IN TAPE RECORDERS, HI-FI AMPS AND OTHER AUDIO-FREQUENCY EQUIPMENT
TERMINAL LENGTH: 0.6 MILLIMETERS MINIMUM AND 0.8 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 45.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING
~1: VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
99198505
TRANSISTOR
NSN, MFG P/N
5961015797465
NSN
5961-01-579-7465
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 800.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL, LOGIC LEVEL, TMOS FET, TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23 MOSFET
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: REEL SIZE 7 INCHES, TAPE WIDTH 8MM, 3000 PER REEL; TYPICAL APPLICATIONS INCLUDE DC-DC CONVERTER AND POWER MANAGEMENT IN PC'S, PRINTERS AND CELLULAR PRODUCTS
TERMINAL LENGTH: 0.3 MILLIMETERS MINIMUM AND 0.6 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
BSS138LT1
TRANSISTOR
NSN, MFG P/N
5961015797465
NSN
5961-01-579-7465
MFG
MOTOROLA SEMICONDUCTOR DISTRIBUTION CENTER C/O MOTOROLA SEMICONDUCTOR PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 800.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL, LOGIC LEVEL, TMOS FET, TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23 MOSFET
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: REEL SIZE 7 INCHES, TAPE WIDTH 8MM, 3000 PER REEL; TYPICAL APPLICATIONS INCLUDE DC-DC CONVERTER AND POWER MANAGEMENT IN PC'S, PRINTERS AND CELLULAR PRODUCTS
TERMINAL LENGTH: 0.3 MILLIMETERS MINIMUM AND 0.6 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
APS-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015797506
NSN
5961-01-579-7506
MFG
EATON POWER SOLUTIONS LTD
Description
III END ITEM IDENTIFICATION: REMOTE VIDEO SURVEILLANCE SYSTEM (RVSS)
PART NAME ASSIGNED BY CONTROLLING AGENCY: SHELF RECTIFER
SPECIAL FEATURES: 24V DC
