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5962-01-182-8031

20 Products

96LS02DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828031

NSN

5962-01-182-8031

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96LS02DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828031

NSN

5962-01-182-8031

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 340544
MANUFACTURERS CODE: 18876
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

340454

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828032

NSN

5962-01-182-8032

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340454

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828032

NSN

5962-01-182-8032

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 340454
MANUFACTURERS CODE: 22915
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

AM25LS2569DMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828032

NSN

5962-01-182-8032

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AM25LS2569DMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828032

NSN

5962-01-182-8032

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 340454
MANUFACTURERS CODE: 22915
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

340519

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828033

NSN

5962-01-182-8033

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340519

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828033

NSN

5962-01-182-8033

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 340519
MANUFACTURERS CODE: 22915
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

SNJ54S381J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828033

NSN

5962-01-182-8033

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SNJ54S381J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828033

NSN

5962-01-182-8033

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 340519
MANUFACTURERS CODE: 22915
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

589782-2

MICROCIRCUIT

NSN, MFG P/N

5962011828099

NSN

5962-01-182-8099

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589782-2

MICROCIRCUIT

NSN, MFG P/N

5962011828099

NSN

5962-01-182-8099

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

141556-0032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

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141556-0032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM

143420-0032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

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143420-0032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM

M2732

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

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M2732

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011828138

NSN

5962-01-182-8138

MFG

INTEL CORP SALES OFFICE

Description

FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM

116590

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

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116590

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH SLEW RATE AND LOW NOISE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

5013490-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

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5013490-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH SLEW RATE AND LOW NOISE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

TL074CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

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TL074CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH SLEW RATE AND LOW NOISE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

UONO-00074

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

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UONO-00074

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011828241

NSN

5962-01-182-8241

MFG

GIGA-TRONICS INCORPORATED

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH SLEW RATE AND LOW NOISE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

000-8004-556

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

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000-8004-556

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

000-8007-617

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

View More Info

000-8007-617

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

103360-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

View More Info

103360-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

ROLM CORP MIL SPEC COMPUTERS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-0112-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

View More Info

156-0112-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

450016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

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450016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

SYQWEST INC.

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

477-0797-009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

View More Info

477-0797-009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

74E2N458

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

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74E2N458

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011828243

NSN

5962-01-182-8243

MFG

NAVY, UNITED STATES DEPARTMENT OF THE SPAWAR DBA SPACE AND NAVAL WAFARE COMMAND

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00805BCA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/OPEN COLLECTOR AND HIGH VOLTAGE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE