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5961-01-445-0429
20 Products
925995-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014450429
NSN
5961-01-445-0429
925995-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014450429
NSN
5961-01-445-0429
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 450.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: F-15I
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.253 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DRAWING ITEM NAME;SEMICONDUCTOR DEVICES,DIODE VOLTAGE REGULATOR
TERMINAL TYPE AND QUANTITY: 1 WIRE LOOP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL NOMINAL REGULATOR VOLTAGE AND 1.5 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
BB515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446195
NSN
5961-01-444-6195
MFG
PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.55 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
BB515-B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446195
NSN
5961-01-444-6195
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.55 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
SSE3792
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446436
NSN
5961-01-444-6436
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
OVERALL LENGTH: 0.021 INCHES MINIMUM AND 0.025 INCHES MAXIMUM
OVERALL WIDTH: 0.014 INCHES MINIMUM AND 0.018 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HPND-4018
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446803
NSN
5961-01-444-6803
MFG
HEWLETT PACKARD CO
Description
OVERALL LENGTH: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
ND-4018
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446803
NSN
5961-01-444-6803
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
OVERALL LENGTH: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
M1X1229
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446838
NSN
5961-01-444-6838
MFG
AEROFLEX / METELICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M1X1225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446839
NSN
5961-01-444-6839
MFG
AEROFLEX / METELICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N6162A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446881
NSN
5961-01-444-6881
JAN1N6162A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014446881
NSN
5961-01-444-6881
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6162A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-18500/516 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.036 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 64.6 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
21917
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014447612
NSN
5961-01-444-7612
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
III END ITEM IDENTIFICATION: TORNADO, AIR TO AIR MISSILE UNIT
Related Searches:
D22-5011-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014448151
NSN
5961-01-444-8151
D22-5011-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014448151
NSN
5961-01-444-8151
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
MCR71-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448164
NSN
5961-01-444-8164
MFG
WOODARD ELECTRIC INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5KP60A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448191
NSN
5961-01-444-8191
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 66.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 73.7 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N5990C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448192
NSN
5961-01-444-8192
MFG
MICROSEMI CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
95227597
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448192
NSN
5961-01-444-8192
MFG
ZODIAC DATA SYSTEMS INC DBA ENERTEC AMERICA
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
732B-220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448910
NSN
5961-01-444-8910
MFG
FLUKE CORPORATION
Description
III END ITEM IDENTIFICATION: SHAHINE II T6/B, FLUKE CORP
Related Searches:
91774903
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448910
NSN
5961-01-444-8910
MFG
THALES
Description
III END ITEM IDENTIFICATION: SHAHINE II T6/B, FLUKE CORP
Related Searches:
JAN1N6161A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448958
NSN
5961-01-444-8958
JAN1N6161A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014448958
NSN
5961-01-444-8958
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6161A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.9 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
0925509353
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014449113
NSN
5961-01-444-9113
0925509353
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014449113
NSN
5961-01-444-9113
MFG
CALLANAN CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
ST5641
TRANSISTOR
NSN, MFG P/N
5961014449391
NSN
5961-01-444-9391
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
III END ITEM IDENTIFICATION: ARI 23181, GILBERT ENGINEERING CO INC/INCON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
