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5961-00-370-2654

20 Products

167-0029-120

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

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167-0029-120

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1814-2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 05277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

1814-2001

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

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1814-2001

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1814-2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 05277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N6233

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

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2N6233

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1814-2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 05277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

82T369M001

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

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82T369M001

TRANSISTOR

NSN, MFG P/N

5961003702654

NSN

5961-00-370-2654

MFG

SELEX SISTEMI INTEGRATI SPA

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 1814-2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 05277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

9330-114-10112

TRANSISTOR

NSN, MFG P/N

5961003702676

NSN

5961-00-370-2676

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9330-114-10112

TRANSISTOR

NSN, MFG P/N

5961003702676

NSN

5961-00-370-2676

MFG

COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BCY39
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 410.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 64.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

1N1342A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003703873

NSN

5961-00-370-3873

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1N1342A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003703873

NSN

5961-00-370-3873

MFG

SOLID STATE DEVICES INC.

Description

DESIGN CONTROL REFERENCE: SC-D-647215
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80063
OVERALL LENGTH: 1.223 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

SC-D-647215

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003703873

NSN

5961-00-370-3873

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SC-D-647215

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003703873

NSN

5961-00-370-3873

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

DESIGN CONTROL REFERENCE: SC-D-647215
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80063
OVERALL LENGTH: 1.223 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

100164

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003708462

NSN

5961-00-370-8462

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100164

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003708462

NSN

5961-00-370-8462

MFG

NATIONAL MICRONETICS INC PACIFIC DIV

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

2T035LS0678

TRANSISTOR

NSN, MFG P/N

5961003708516

NSN

5961-00-370-8516

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2T035LS0678

TRANSISTOR

NSN, MFG P/N

5961003708516

NSN

5961-00-370-8516

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 WIRE HOOK
TEST DATA DOCUMENT: 22915-2T035 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VO

SDT7151

TRANSISTOR

NSN, MFG P/N

5961003708516

NSN

5961-00-370-8516

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SDT7151

TRANSISTOR

NSN, MFG P/N

5961003708516

NSN

5961-00-370-8516

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 WIRE HOOK
TEST DATA DOCUMENT: 22915-2T035 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VO

C7086

TRANSISTOR

NSN, MFG P/N

5961003711933

NSN

5961-00-371-1933

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C7086

TRANSISTOR

NSN, MFG P/N

5961003711933

NSN

5961-00-371-1933

MFG

CRYSTALONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC

G181-752-001

TRANSISTOR

NSN, MFG P/N

5961003711933

NSN

5961-00-371-1933

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G181-752-001

TRANSISTOR

NSN, MFG P/N

5961003711933

NSN

5961-00-371-1933

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC

533803-3

TRANSISTOR

NSN, MFG P/N

5961003711939

NSN

5961-00-371-1939

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533803-3

TRANSISTOR

NSN, MFG P/N

5961003711939

NSN

5961-00-371-1939

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 533803-3
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
OVERALL HEIGHT: 0.345 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

SJ5757HB

TRANSISTOR

NSN, MFG P/N

5961003711939

NSN

5961-00-371-1939

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SJ5757HB

TRANSISTOR

NSN, MFG P/N

5961003711939

NSN

5961-00-371-1939

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 533803-3
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
OVERALL HEIGHT: 0.345 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

EW46895

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961003718375

NSN

5961-00-371-8375

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EW46895

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961003718375

NSN

5961-00-371-8375

MFG

OSHKOSH CORPORATION

Description

DESIGN CONTROL REFERENCE: EW46895
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF DIODE,SOLDER,AND HARDWARE ASSEMBLY
MANUFACTURERS CODE: 45152
THE MANUFACTURERS DATA:

EW50499

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961003718380

NSN

5961-00-371-8380

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EW50499

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961003718380

NSN

5961-00-371-8380

MFG

OSHKOSH CORPORATION

Description

DESIGN CONTROL REFERENCE: EW50499
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF DIODE,SOLDER,AND HARDWARE ASSEMBLY
MANUFACTURERS CODE: 45152
THE MANUFACTURERS DATA:

590528-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

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590528-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 590528-3
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.244 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
TEST DATA DOCUMENT: 96214-590528 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

MD0076

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

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MD0076

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 590528-3
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.244 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
TEST DATA DOCUMENT: 96214-590528 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

MX2759

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

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MX2759

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

MFG

AEROFLEX / METELICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 590528-3
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.244 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
TEST DATA DOCUMENT: 96214-590528 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

QSCH-3852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

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QSCH-3852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003718400

NSN

5961-00-371-8400

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 590528-3
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.244 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
TEST DATA DOCUMENT: 96214-590528 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK