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5961-00-005-6947
20 Products
928283-101
TRANSISTOR
NSN, MFG P/N
5961000056947
NSN
5961-00-005-6947
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 928283-101
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 82577
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-
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STD1803-23
TRANSISTOR MODIFIED
NSN, MFG P/N
5961000054441
NSN
5961-00-005-4441
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
TRANSISTOR MODIFIED
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40-666-003-12
TRANSISTOR
NSN, MFG P/N
5961000054443
NSN
5961-00-005-4443
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-3239
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000054446
NSN
5961-00-005-4446
40-666-3239
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000054446
NSN
5961-00-005-4446
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR DEVICE,DIODE
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40-666-006-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000054469
NSN
5961-00-005-4469
40-666-006-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000054469
NSN
5961-00-005-4469
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: STD2726-37
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
MANUFACTURERS CODE: K5294
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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40-666-729
TRANSISTOR
NSN, MFG P/N
5961000054470
NSN
5961-00-005-4470
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-006-03
TRANSISTOR
NSN, MFG P/N
5961000054471
NSN
5961-00-005-4471
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
40-666-003-01
TRANSISTOR
NSN, MFG P/N
5961000054518
NSN
5961-00-005-4518
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-003-02
TRANSISTOR
NSN, MFG P/N
5961000054519
NSN
5961-00-005-4519
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-003-03
TRANSISTOR
NSN, MFG P/N
5961000054520
NSN
5961-00-005-4520
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-003-06
TRANSISTOR
NSN, MFG P/N
5961000054522
NSN
5961-00-005-4522
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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28456-313
TRANSISTOR
NSN, MFG P/N
5961000054631
NSN
5961-00-005-4631
MFG
SELEX GALILEO LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
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TRANSISTOR
NSN, MFG P/N
5961000054631
NSN
5961-00-005-4631
MFG
VISHAY
Description
SEMICONDUCTOR MATERIAL: SILICON
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CV7344
TRANSISTOR
NSN, MFG P/N
5961000054631
NSN
5961-00-005-4631
MFG
QINETIQ LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
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28458-00645
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000054708
NSN
5961-00-005-4708
28458-00645
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000054708
NSN
5961-00-005-4708
MFG
SELEX SENSORS & AIRBORNE SYSTEMS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
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ZR21
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000054708
NSN
5961-00-005-4708
MFG
ZETEX PLC
Description
SEMICONDUCTOR DEVICE,DIODE
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16756914-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000056684
NSN
5961-00-005-6684
16756914-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000056684
NSN
5961-00-005-6684
MFG
SYPRIS ELECTRONICS LLC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.365 INCHES MAXIMUM
OVERALL WIDTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO B
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43000234
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000056918
NSN
5961-00-005-6918
MFG
AMERICAN RECTIFIER CORP
Description
DESIGN CONTROL REFERENCE: R6000430YA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 05277
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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R6000430YA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000056918
NSN
5961-00-005-6918
R6000430YA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000056918
NSN
5961-00-005-6918
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
DESIGN CONTROL REFERENCE: R6000430YA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 05277
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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43000235
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000056919
NSN
5961-00-005-6919
MFG
AMERICAN RECTIFIER CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
