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5961-01-461-3909

20 Products

OM13204SAX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014613909

NSN

5961-01-461-3909

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OM13204SAX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014613909

NSN

5961-01-461-3909

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL

93106863-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014613911

NSN

5961-01-461-3911

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93106863-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014613911

NSN

5961-01-461-3911

MFG

WARNER ROBINS AIR LOGISTICS CENTER

2351-36807-1014

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014613915

NSN

5961-01-461-3915

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2351-36807-1014

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014613915

NSN

5961-01-461-3915

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

LMC568CM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614093

NSN

5961-01-461-4093

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LMC568CM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614093

NSN

5961-01-461-4093

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

III END ITEM IDENTIFICATION: 6030014148582 E/I FSCM 03950

DL101C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614096

NSN

5961-01-461-4096

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DL101C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614096

NSN

5961-01-461-4096

MFG

DIODES INC

Description

III END ITEM IDENTIFICATION: 6030014148582 E/I FSCM 03950

DL4148CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614097

NSN

5961-01-461-4097

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DL4148CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614097

NSN

5961-01-461-4097

MFG

DIODES INC

Description

III END ITEM IDENTIFICATION: 6030014148582 E/I FSCM 03950

APT60D40B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614115

NSN

5961-01-461-4115

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APT60D40B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614115

NSN

5961-01-461-4115

MFG

MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE OR 100.00 AMPERES NOMINAL FORWARD CURRENT, TOTAL RMS AND 600.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

ECG5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614153

NSN

5961-01-461-4153

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ECG5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614153

NSN

5961-01-461-4153

MFG

PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE OR 0.80 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 60.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
III END ITEM IDENTIFICATION: PATHFINDER CLASS T-AGS 60
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: LEAD SULFIDE
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.00 MAXIMUM REVERSE VOLTAGE, DC AND 400.00 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.00 MAXIMUM WORKING PEAK REVERSE VOLTAGE

NTE5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614153

NSN

5961-01-461-4153

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NTE5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614153

NSN

5961-01-461-4153

MFG

NTE ELECTRONICS INC SUB OF SOLID STATE INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE OR 0.80 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 60.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
III END ITEM IDENTIFICATION: PATHFINDER CLASS T-AGS 60
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: LEAD SULFIDE
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.00 MAXIMUM REVERSE VOLTAGE, DC AND 400.00 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.00 MAXIMUM WORKING PEAK REVERSE VOLTAGE

MUR6040

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614289

NSN

5961-01-461-4289

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MUR6040

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614289

NSN

5961-01-461-4289

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 0.80 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 60.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 60.00 AMPERES NOMINAL OFF-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.00 MAXIMUM REVERSE VOLTAGE, DC AND 400.00 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.00 MAXIMUM WORKING PEAK REVERSE VOLTAGE

A3250024-5

TRANSISTOR

NSN, MFG P/N

5961014614300

NSN

5961-01-461-4300

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A3250024-5

TRANSISTOR

NSN, MFG P/N

5961014614300

NSN

5961-01-461-4300

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: 0000000000000 E/I FSCM 80058

381445-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614585

NSN

5961-01-461-4585

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381445-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614585

NSN

5961-01-461-4585

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

III END ITEM IDENTIFICATION: REC/TRANSMITT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

MA4P789CK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614585

NSN

5961-01-461-4585

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MA4P789CK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014614585

NSN

5961-01-461-4585

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

III END ITEM IDENTIFICATION: REC/TRANSMITT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

TIP32A

TRANSISTOR

NSN, MFG P/N

5961014615060

NSN

5961-01-461-5060

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TIP32A

TRANSISTOR

NSN, MFG P/N

5961014615060

NSN

5961-01-461-5060

MFG

STMICROELECTRONICS INC

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 29.75 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

GM5VHSL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014615190

NSN

5961-01-461-5190

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GM5VHSL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014615190

NSN

5961-01-461-5190

MFG

GPD OPTOELECTRONICS CORP.

Description

INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 0.75 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 280.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

JANTX2N6782

TRANSISTOR

NSN, MFG P/N

5961014617679

NSN

5961-01-461-7679

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JANTX2N6782

TRANSISTOR

NSN, MFG P/N

5961014617679

NSN

5961-01-461-7679

MFG

FREESCALE SEMICONDUCTOR INC.

048536-0001

TRANSISTOR

NSN, MFG P/N

5961014617703

NSN

5961-01-461-7703

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048536-0001

TRANSISTOR

NSN, MFG P/N

5961014617703

NSN

5961-01-461-7703

MFG

THALES ATM INC.

MUR020020CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014617964

NSN

5961-01-461-7964

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MUR020020CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014617964

NSN

5961-01-461-7964

MFG

MOTOROLA INC SEMICONDUCTOR PRODUCTS DIV

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

2200041-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014618063

NSN

5961-01-461-8063

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2200041-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014618063

NSN

5961-01-461-8063

MFG

NATIONAL WEATHER SERVICE NEXRAD RADAR OPERATIONS CENTER

Description

III END ITEM IDENTIFICATION: NEXT GENERATION RADAR (NEXRAD)
SPECIAL FEATURES: NSN RESTRICTED TO USE BY NWS DEPOT REPAIR TEAM ONLY

1N2135A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014618172

NSN

5961-01-461-8172

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1N2135A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014618172

NSN

5961-01-461-8172

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES