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5961-01-204-3031
20 Products
3-10129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043031
NSN
5961-01-204-3031
MFG
CALIFORNIA INSTRUMENTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23445
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
1N5416
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043032
NSN
5961-01-204-3032
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 23545
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
23545
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043032
NSN
5961-01-204-3032
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 23545
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
1N5233B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043033
NSN
5961-01-204-3033
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23448
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
23448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043033
NSN
5961-01-204-3033
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23448
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
296072
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043254
NSN
5961-01-204-3254
MFG
PRECISION SCIENTIFIC PETROLEUM INSTRUMENTS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
544-0967-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043255
NSN
5961-01-204-3255
544-0967-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043255
NSN
5961-01-204-3255
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
539-0751-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043256
NSN
5961-01-204-3256
539-0751-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043256
NSN
5961-01-204-3256
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
552-0120-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043257
NSN
5961-01-204-3257
552-0120-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043257
NSN
5961-01-204-3257
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
X18-10282
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012043287
NSN
5961-01-204-3287
X18-10282
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012043287
NSN
5961-01-204-3287
MFG
CLEVELAND MOTION CONTROLS INC. DBA C M C
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
JANTXV1N3157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043499
NSN
5961-01-204-3499
JANTXV1N3157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012043499
NSN
5961-01-204-3499
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N3157
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/158
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/158 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
505-3772-0
TRANSISTOR
NSN, MFG P/N
5961012044643
NSN
5961-01-204-4643
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
TRANSISTOR
Related Searches:
CR65-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044645
NSN
5961-01-204-4645
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.426 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB W/WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
R4230TS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044645
NSN
5961-01-204-4645
MFG
MICROSEMI CORP-COLORADO
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.426 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB W/WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1987324
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012044647
NSN
5961-01-204-4647
1987324
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012044647
NSN
5961-01-204-4647
MFG
REMY INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
73117126
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012044647
NSN
5961-01-204-4647
73117126
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012044647
NSN
5961-01-204-4647
MFG
NEW HOLLAND CONSTRUCTION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
741074
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044648
NSN
5961-01-204-4648
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
LM385Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044649
NSN
5961-01-204-4649
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
GZ24623A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044651
NSN
5961-01-204-4651
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.120 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 570.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 680.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
H980027-002B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044651
NSN
5961-01-204-4651
H980027-002B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012044651
NSN
5961-01-204-4651
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.120 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 570.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 680.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
