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5961-01-577-8390
20 Products
ZL7354/2682/0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778390
NSN
5961-01-577-8390
ZL7354/2682/0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778390
NSN
5961-01-577-8390
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
SPECIAL FEATURES: TRANSIENT VOLTAGE, SUPPRESSOR; BIDIRECTIONAL; PEAK PULSE POWER RATING: 1500 WATTS; FOR MARITIME SYSTEMS
Related Searches:
MURB1620CT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015771956
NSN
5961-01-577-1956
MURB1620CT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015771956
NSN
5961-01-577-1956
MFG
VISHAY DALE ELECTRONICS INC . DIV VISHAY DALE ELECTRONICS
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HEXFRED COMMON CATHODE DIODE, ULTRAFAST REVCOVERY
TERMINAL LENGTH: 0.555 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MSC1015M
TRANSISTOR
NSN, MFG P/N
5961015772030
NSN
5961-01-577-2030
MFG
STMICROELECTRONICS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN SILICON RF POWER TRANSISTOR
Related Searches:
JAN1N753A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772703
NSN
5961-01-577-2703
JAN1N753A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772703
NSN
5961-01-577-2703
MFG
MICROSEMI CORPORATION
Description
SPECIAL FEATURES: NO,INAL ZENER VOLTAGE 6.2;ZENER TEST CURRENT 20;MAXIMUM ZENER IMPEDANCE 7;MAXIMUM REVERSE CURRENT IN VOLTS 3.5
Related Searches:
JAN1N759A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772704
NSN
5961-01-577-2704
JAN1N759A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772704
NSN
5961-01-577-2704
MFG
MICROSEMI CORPORATION
Description
SPECIAL FEATURES: NOMINAL ZENER VOLTAGE 12.0;ZENER TEST CURRENT 20;MAXIMUM ZENER IMPEDANCE 30;MAXIMUM REVERSE CURRENT IN VOLTS 9.0;MAXIMUM ZENER CURRENT
Related Searches:
MMBT2222ALT1G
TRANSISTOR
NSN, MFG P/N
5961015772754
NSN
5961-01-577-2754
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.225 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
BAV99LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772777
NSN
5961-01-577-2777
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL SWITCHING DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.094 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 70.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BZX84C2V4LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772811
NSN
5961-01-577-2811
BZX84C2V4LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772811
NSN
5961-01-577-2811
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.4 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84C5V1LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772818
NSN
5961-01-577-2818
BZX84C5V1LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772818
NSN
5961-01-577-2818
MFG
TRANSYSTEMS CORP ORATION DBA TRANSYSTEMS CORPORATION CONSULTANTS DIV FORT WORTH
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MBRA130LT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772841
NSN
5961-01-577-2841
MBRA130LT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772841
NSN
5961-01-577-2841
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.083 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
OVERALL WIDTH: 0.103 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MBRS340T3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772853
NSN
5961-01-577-2853
MBRS340T3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015772853
NSN
5961-01-577-2853
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.084 INCHES NOMINAL
OVERALL LENGTH: 0.313 INCHES NOMINAL
OVERALL WIDTH: 0.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SURFACE MOUNT; J BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1SMB15CAT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015774711
NSN
5961-01-577-4711
1SMB15CAT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015774711
NSN
5961-01-577-4711
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: CONTROL APPLICATIONS
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PLASTIC SURFACE MOUNT;ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR;DEVICE MARKING LMC;13INCH REEL;PEAK POWER 600 WATTS
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
16TTS12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015775077
NSN
5961-01-577-5077
16TTS12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015775077
NSN
5961-01-577-5077
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
IRFP150A
TRANSISTOR
NSN, MFG P/N
5961015775099
NSN
5961-01-577-5099
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N CHANNEL POWER MOFSET
SPECIAL FEATURES: FEATURES: AVALANCHE RUGGED TECHNOLOGY;RUGGED GATE OXIDE TECHNOLOGY;LOWER INPUT CAPACITANCE;IMPROVED GATE CHARGE;EXTENDED SAFE OPERATING AREA;175 DEGREE CELSUIS OPERATING TEMPERATURE
Related Searches:
PH1214-25M
TRANSISTOR
NSN, MFG P/N
5961015775911
NSN
5961-01-577-5911
MFG
MACOM
Description
III END ITEM IDENTIFICATION: RADAR SYSTEM
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.217 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NPN SILICON MICROWAVE POWER TRANSISTORS, COMMON BASE CONFIGURATION, BROADBAND CLASS C OPERATION, HIGH EFFICIENCY INTER-DIGITIZED GEOMETRY, DIFFUSED EMITTER BALLASTING RESISTORS, GOLD METALLIZATION SYSTEM, INTERNAL INPUT AND OUTPUT IMPEDANCE MATCHING,
~1: HERMETIC METAL/CERAMIC PACKAGE, ROHS COMPLIANT
Related Searches:
HLMP4000#010
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015776153
NSN
5961-01-577-6153
HLMP4000#010
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015776153
NSN
5961-01-577-6153
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: T-1 3/4, 2MM X 5 MM RECTANGULAR BICLOR LED LAMPS; SWITCH TELEPHONE, SELECTOR
III SUPPLEMENTARY FEATURES: PACKAGE OPTION T-1 3/4 (5MM); COLOR OPTION HIGH EFFECIENCY RED (HER)/HIGH EFFECIENCY GREEN; RIGHT ANGLE HOUSING, EVEN LEADS
SPECIAL FEATURES: DESIGEND FOR APPLICATIONS WHERE DUAL STATE ILLUMINATION IS REQUIRED IN THE SAME PACKAGE: THERE ARE TWO LED CHIPS, MOUNTED ON A CENTRAL COMMON CATHODE LEAD FOR MAXIMUM ON-AXIS VIEWABILITY; COLORS BETWEEN THE TWO CHIPS CAN BE GENERATED BY INDEPENDENTLY
~1: PULSE WIDTH MODULATING THE LED CHIPS
Related Searches:
1N4742A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015777288
NSN
5961-01-577-7288
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CASE:HERMETICALLY SEALED GLASS,THERMAL RESISTANCE: LESS THAN 100C/WATT JUNCTION TO LEAD AT 0.375-INCHES FROM BODY,POLARITY:BANDED END IS CATHODE,WEIGHT: 0.378 GRAMS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL BASE SUPPLY VOLTAGE
Related Searches:
FR154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015777531
NSN
5961-01-577-7531
MFG
DIODES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.6 MILLIMETERS MINIMUM AND 3.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.5 MILLIMETERS MINIMUM AND 7.6 MILLIMETERS MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.6 MILLIMETERS MINIMUM AND 0.8 MILLIMETERS MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
4N35M
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015777566
NSN
5961-01-577-7566
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHOTOTRANSISTOR OPTOCOUPLER
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.115 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: GALLIUM ARSENIDE INFRARED EMITTING DIODE
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.3 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
1.5KE68CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778390
NSN
5961-01-577-8390
MFG
MICROSEMI CORPORATION
Description
SPECIAL FEATURES: TRANSIENT VOLTAGE, SUPPRESSOR; BIDIRECTIONAL; PEAK PULSE POWER RATING: 1500 WATTS; FOR MARITIME SYSTEMS
