My Quote Request
No products added yet
5961-01-568-5195
20 Products
41078
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015685195
NSN
5961-01-568-5195
MFG
HDT TACTICAL SYSTEMS INC.
Description
III END ITEM IDENTIFICATION: HEATER, DUCT TYPE, PORTABLE NSN 4520-01-559-8737
III PART NAME ASSIGNED BY CONTROLLING AGENCY: CADMIUM SULFIDE FLAME DETECTOR
Related Searches:
MBRB1545CTT4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683035
NSN
5961-01-568-3035
MBRB1545CTT4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683035
NSN
5961-01-568-3035
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.340 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MBRA140T3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683037
NSN
5961-01-568-3037
MBRA140T3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683037
NSN
5961-01-568-3037
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
OVERALL WIDTH: 0.103 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MMBT2484LT1G
TRANSISTOR
NSN, MFG P/N
5961015683040
NSN
5961-01-568-3040
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE BASE
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MMBD301LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683041
NSN
5961-01-568-3041
MMBD301LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683041
NSN
5961-01-568-3041
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
MBRS130LT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683044
NSN
5961-01-568-3044
MBRS130LT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683044
NSN
5961-01-568-3044
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.084 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
OVERALL WIDTH: 0.140 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BZX84C5V6LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683052
NSN
5961-01-568-3052
BZX84C5V6LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683052
NSN
5961-01-568-3052
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
BZX84C22LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683059
NSN
5961-01-568-3059
BZX84C22LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683059
NSN
5961-01-568-3059
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 23.3 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
BZX84C6V8LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683067
NSN
5961-01-568-3067
BZX84C6V8LT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683067
NSN
5961-01-568-3067
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.114 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.2 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
MM3Z12VT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683071
NSN
5961-01-568-3071
MM3Z12VT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683071
NSN
5961-01-568-3071
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS NOMINAL
OVERALL LENGTH: 1.7 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.7 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
BCP53T1G
TRANSISTOR
NSN, MFG P/N
5961015683194
NSN
5961-01-568-3194
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE BASE
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-261
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.068 INCHES MAXIMUM
OVERALL LENGTH: 0.249 INCHES MINIMUM AND 0.263 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MURB1620CTT4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683197
NSN
5961-01-568-3197
MURB1620CTT4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683197
NSN
5961-01-568-3197
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.340 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MMBT6517LT1G
TRANSISTOR
NSN, MFG P/N
5961015683199
NSN
5961-01-568-3199
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
BSS123LT1G
TRANSISTOR
NSN, MFG P/N
5961015683200
NSN
5961-01-568-3200
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD-FREE
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.007 INCHES MAXIMUM
TERMINAL LENGTH: 0.014 INCHES MINIMUM AND 0.028 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
MJL1302A
TRANSISTOR
NSN, MFG P/N
5961015683201
NSN
5961-01-568-3201
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-264
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.795 INCHES MINIMUM AND 1.882 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.017 INCHES MINIMUM AND 0.031 INCHES MAXIMUM
TERMINAL LENGTH: 0.693 INCHES MINIMUM AND 0.740 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 260.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
MJE15032G
TRANSISTOR
NSN, MFG P/N
5961015683262
NSN
5961-01-568-3262
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON ALLOY
Related Searches:
A-57171
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015683442
NSN
5961-01-568-3442
A-57171
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015683442
NSN
5961-01-568-3442
MFG
BOGUE SYSTEMS INC .
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
A-57282
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015683447
NSN
5961-01-568-3447
A-57282
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015683447
NSN
5961-01-568-3447
MFG
BOGUE SYSTEMS INC .
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
NTE5069A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015683627
NSN
5961-01-568-3627
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
III END ITEM IDENTIFICATION: CONSOLE CONT, DAU TYPE 3, NO 3 899080-101; CONSOLE, DAU3 (90-532-1)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE, 1 WATT PORM 5% TOLERANCE
SPECIAL FEATURES: NOMINAL VOLTAGE 4.7V; TEST CURRENT 53.0MA; MAX IMPEDANCE ZZT AT IZT 8 OHMS, ZZK 500 OHMS AT IZK 1.0MA; MAX LEAKAGE CURRENT IR 10 MICROAMPS, VOLTS 1.0; MAX FORWARD CURRENT VF 1.2V, IF 200MA; SINGLE PHASE, HALF WAVE, 60HZ, RESISTIVE OR INDUCTIVE LOAD, FOR
~1: CAPACITIVE LOAD, DERATE CURRENT BY 20%; TC
Related Searches:
SW-2183-1AT006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015684077
NSN
5961-01-568-4077
SW-2183-1AT006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015684077
NSN
5961-01-568-4077
MFG
AMERICAN MICROWAVE CORPORATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PIN DIODE SWITCH
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SPECIAL FEATURES: 0.3 TO 18 GHZ FREQUENCY BAND; 70 DB, MINIMUM ON/OFF ISOLATION; 10 NS, MAXIMUM RISE/FALL TIME; SMALL SIZE; LIGHT WEIGHT; INTEGRAL TTL DRIVER; APPLICATIONS: RADAR SIMULATORS, RADAR CROSS SECTION TRANSMITTERS, PULSE MODULATORS
