Featured Products

My Quote Request

No products added yet

5961-01-562-7653

20 Products

SET111403

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015627653

NSN

5961-01-562-7653

View More Info

SET111403

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015627653

NSN

5961-01-562-7653

MFG

SEMTECH CORPORATION

Description

SPECIAL FEATURES: MAXIMUM FORWARD VOLTAGE: 1.2; MAXIMUM REVERSE RECOVERY TIME: 2000; LOW THERMAL IMPEDANCE, SMALL SIZE & LOW WEIGHT, HIGH CURRENT APPLICATIONS, ISOLATED FOR DIRECT HEATSINK MOUNTING, HIGHSURGE RATINGS. PART NAME ASSIGNED BY CONTROLLING AGENCY: BRIDGE
~1: RECTIFIER

VUO125-12 NO7

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015621655

NSN

5961-01-562-1655

View More Info

VUO125-12 NO7

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015621655

NSN

5961-01-562-1655

MFG

IXYS CORPORATION

Description

III END ITEM IDENTIFICATION: AN/GSC-70 (V) 1, ISIL
SPECIAL FEATURES: PACKAGE WITH SCREW TERMINALS; ISOLATION VOLTAGE 3000V; PLANAR PASSIVATED CHIPS; BLOCKING VOLTAGE UP TO 1800V; LOW FORWARD VOLTAGE DROP; UL REGISTERED E 72873

3000

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

View More Info

3000

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

MFG

TORK INC

Description

III END ITEM IDENTIFICATION: AN/GSC-70 (V) 1, ISIL; SPARES KIT, WARNING EQUIPMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHOTOELECTRIC CONTROLS THERMAL 3000 SERIES (TORK); PHOTOELECTRIC SENSOR
SPECIAL FEATURES: USE TO CONTROL POLE LANTERNS, LAWN LIGHTS, WALKWAY LIGHTING; CONTROL HOUSING IS WEATHER RESISTANT MOLDED LEXAN WITH ULTRASONICALLY WELDED SEEMS; BUILT IN DELAY UP TO 2 MINUTES PREVENTS FALSE SWITCHING DUE TO MOMENTARY FLASHES OF LIGHT; 120V, 1500W
~1: TUNGSTEN, 1200VA BALLAST

414332

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

View More Info

414332

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

MFG

VIASAT INC DBA VIASAT SATELLITE NETWORKS DIV VIASAT ATLANTA

Description

III END ITEM IDENTIFICATION: AN/GSC-70 (V) 1, ISIL; SPARES KIT, WARNING EQUIPMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHOTOELECTRIC CONTROLS THERMAL 3000 SERIES (TORK); PHOTOELECTRIC SENSOR
SPECIAL FEATURES: USE TO CONTROL POLE LANTERNS, LAWN LIGHTS, WALKWAY LIGHTING; CONTROL HOUSING IS WEATHER RESISTANT MOLDED LEXAN WITH ULTRASONICALLY WELDED SEEMS; BUILT IN DELAY UP TO 2 MINUTES PREVENTS FALSE SWITCHING DUE TO MOMENTARY FLASHES OF LIGHT; 120V, 1500W
~1: TUNGSTEN, 1200VA BALLAST

A3298671-207

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

View More Info

A3298671-207

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015621712

NSN

5961-01-562-1712

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: AN/GSC-70 (V) 1, ISIL; SPARES KIT, WARNING EQUIPMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHOTOELECTRIC CONTROLS THERMAL 3000 SERIES (TORK); PHOTOELECTRIC SENSOR
SPECIAL FEATURES: USE TO CONTROL POLE LANTERNS, LAWN LIGHTS, WALKWAY LIGHTING; CONTROL HOUSING IS WEATHER RESISTANT MOLDED LEXAN WITH ULTRASONICALLY WELDED SEEMS; BUILT IN DELAY UP TO 2 MINUTES PREVENTS FALSE SWITCHING DUE TO MOMENTARY FLASHES OF LIGHT; 120V, 1500W
~1: TUNGSTEN, 1200VA BALLAST

CM2502

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015621830

NSN

5961-01-562-1830

View More Info

CM2502

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015621830

NSN

5961-01-562-1830

MFG

MULTICOMP INC DBA LABELONCE CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES TOTAL POWER DISSIPATION
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 140.0 SOURCE SUPPLY VOLTAGE
MOUNTING METHOD: PLUG-IN
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 25.4 MILLIMETERS NOMINAL
OVERALL LENGTH: 25.4 MILLIMETERS NOMINAL
OVERALL WIDTH: 28.7 MILLIMETERS NOMINAL
SPECIAL FEATURES: CURRENT, IFS MAX: 300A, 1 PHASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

VN10K-TO18

TRANSISTOR

NSN, MFG P/N

5961015624120

NSN

5961-01-562-4120

View More Info

VN10K-TO18

TRANSISTOR

NSN, MFG P/N

5961015624120

NSN

5961-01-562-4120

MFG

SUPERTEX INC.

Description

III END ITEM IDENTIFICATION: COMPUTER, FLIGHT CONTROL, NSN 6615-99-549-5650

R7000805XXUA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015624783

NSN

5961-01-562-4783

View More Info

R7000805XXUA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015624783

NSN

5961-01-562-4783

MFG

POWEREX INC

Description

OVERALL LENGTH: 11.663 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
SPECIAL FEATURES: GENERAL PURPOSE RECTIFIER WITH HIGH SURGE CURRENT RATINGS; HIGH RATED BLOCKING VOLTAGES; ELECTRICAL SELECTIONFOR PARALLEL AND SERIES OPERATION; HIGH VOLTAGE CREEPAGE AND STRIKE PATHS

524111C17

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015624915

NSN

5961-01-562-4915

View More Info

524111C17

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015624915

NSN

5961-01-562-4915

MFG

CHAUVIN ARNOUX

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.6 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.250 MAXIMUM FORWARD VOLTAGE, DC

HSMS-2855T30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015624915

NSN

5961-01-562-4915

View More Info

HSMS-2855T30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015624915

NSN

5961-01-562-4915

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.6 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.250 MAXIMUM FORWARD VOLTAGE, DC

40175-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015625018

NSN

5961-01-562-5018

View More Info

40175-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015625018

NSN

5961-01-562-5018

MFG

UNITED TECHNOLOGIES CORP HAMILTON SUNDSTRAND CORP

Description

CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: MV-22A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER ASSEMBLY, SILICONE (INAVY); SILICONE CONTROLLED RECTIFIER ASSEMBLY-NO2 (DRAWING NAME)
SPECIAL FEATURES: RECTIFIER ASSEMBLY, SILICONE (REQUESTED NAME)

MFR141G

TRANSISTOR

NSN, MFG P/N

5961015625864

NSN

5961-01-562-5864

View More Info

MFR141G

TRANSISTOR

NSN, MFG P/N

5961015625864

NSN

5961-01-562-5864

MFG

TYCO ELECTRONICS CORP

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: RF POWER FIELD-EFFECT TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: SLOT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

PH1214-300M

TRANSISTOR

NSN, MFG P/N

5961015626011

NSN

5961-01-562-6011

View More Info

PH1214-300M

TRANSISTOR

NSN, MFG P/N

5961015626011

NSN

5961-01-562-6011

MFG

MACOM

Description

III END ITEM IDENTIFICATION: AIR ROUTE SURVEILLANCE RADAR 4 (ARSR4)

000-118-334

TRANSISTOR

NSN, MFG P/N

5961015627115

NSN

5961-01-562-7115

View More Info

000-118-334

TRANSISTOR

NSN, MFG P/N

5961015627115

NSN

5961-01-562-7115

MFG

FURUNO USA. INC

Description

III END ITEM IDENTIFICATION: GPS NAVIGATOR GP-500
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FIELD EFFECT TRANSISTOR
SPECIAL FEATURES: FET FOR A FS1501

BZX84C9V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015627133

NSN

5961-01-562-7133

View More Info

BZX84C9V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015627133

NSN

5961-01-562-7133

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

Description

CAPACITANCE RATING IN PICOFARADS: 130.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 3500.0 MILLIWATTS NOMINAL OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

IXDH30N120

TRANSISTOR

NSN, MFG P/N

5961015627279

NSN

5961-01-562-7279

View More Info

IXDH30N120

TRANSISTOR

NSN, MFG P/N

5961015627279

NSN

5961-01-562-7279

MFG

IXYS CORPORATION

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH VOLTAGE IGBT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.599 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER

MRA1014-2

TRANSISTOR

NSN, MFG P/N

5961015627310

NSN

5961-01-562-7310

View More Info

MRA1014-2

TRANSISTOR

NSN, MFG P/N

5961015627310

NSN

5961-01-562-7310

MFG

MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIPOLAR NPN UHF MICROWAVE TRANSISTOR; MIN POWER GAIN 8.2 DB; RF MOD PKG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE

MRA1014-12

TRANSISTOR

NSN, MFG P/N

5961015627311

NSN

5961-01-562-7311

View More Info

MRA1014-12

TRANSISTOR

NSN, MFG P/N

5961015627311

NSN

5961-01-562-7311

MFG

MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIPOLAR NPN UHF MICROWAVE TRANSISTOR; 7.8 DB MIN POWER GAIN; 1 MHZ FREQ
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE

APT2X61S20J

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015627611

NSN

5961-01-562-7611

View More Info

APT2X61S20J

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015627611

NSN

5961-01-562-7611

MFG

MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL DIODE
OVERALL HEIGHT: 25.3 MILLIMETERS NOMINAL
OVERALL LENGTH: 38.1 MILLIMETERS NOMINAL
OVERALL WIDTH: 12.0 MILLIMETERS NOMINAL

333924

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015627653

NSN

5961-01-562-7653

View More Info

333924

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015627653

NSN

5961-01-562-7653

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

SPECIAL FEATURES: MAXIMUM FORWARD VOLTAGE: 1.2; MAXIMUM REVERSE RECOVERY TIME: 2000; LOW THERMAL IMPEDANCE, SMALL SIZE & LOW WEIGHT, HIGH CURRENT APPLICATIONS, ISOLATED FOR DIRECT HEATSINK MOUNTING, HIGHSURGE RATINGS. PART NAME ASSIGNED BY CONTROLLING AGENCY: BRIDGE
~1: RECTIFIER