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5961-01-578-2171

20 Products

BFR92AW

TRANSISTOR

NSN, MFG P/N

5961015782171

NSN

5961-01-578-2171

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BFR92AW

TRANSISTOR

NSN, MFG P/N

5961015782171

NSN

5961-01-578-2171

MFG

PHILIPS SEMICONDUCTORS INC

Description

III END ITEM IDENTIFICATION: USE IN RF AMPLIFIERS, MIXERS AND OSCILLATORS WITH SIGNAL FREQUENCIES UP TO 1 GHZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN 5 GHZ WIDEBAND TRANSISTOR
SPECIAL FEATURES: JUNCTION TEMP: 150 DEG C

1.5KE100CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015778396

NSN

5961-01-577-8396

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1.5KE100CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015778396

NSN

5961-01-577-8396

MFG

MICROSEMI CORPORATION

Description

III END ITEM IDENTIFICATION: MARITIME SYSTEMS
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR

ZL7354/31002/0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015778396

NSN

5961-01-577-8396

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ZL7354/31002/0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015778396

NSN

5961-01-577-8396

MFG

SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS

Description

III END ITEM IDENTIFICATION: MARITIME SYSTEMS
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR

DSI17-12A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015778824

NSN

5961-01-577-8824

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DSI17-12A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015778824

NSN

5961-01-577-8824

MFG

IXYS CORPORATION

Description

OVERALL LENGTH: 31.3 MILLIMETERS NOMINAL
OVERALL WIDTH: 11.0 MILLIMETERS NOMINAL
PART NAME ASSIGNED BY CONTROLLING AGENCY: AVALANCHE DIODE
SPECIAL FEATURES: INTERNATIONAL STANDARD PACKAGE,JEDEC DO-203 AA (DO-4);PLANAR GLASSIVATED CHIPS.APPLICATIONS:SUPPLIES FOR DC POWER EQUIPMENT,DC SUPPLY FOR PWM INVERTER,FIELD SUPPLY FOR DC MOTORS,BATTERY DC POWER SUPPLIES

MC14049BCP

TRANSISTOR

NSN, MFG P/N

5961015779091

NSN

5961-01-577-9091

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MC14049BCP

TRANSISTOR

NSN, MFG P/N

5961015779091

NSN

5961-01-577-9091

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: DUAL POWER MOSFET, P-CHANNEL POLARITY; TMOS; FIELD EFFECT XSISTOR; 90 MGOHM MAX RDS; 630PF AT 16VDC; 2 WATT; HI SPEED SWITCH; SURFACE MTD; CONTAINS LEAD; OP TEMP M55/P150 DEG C
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL ON-STATE DRAIN TO SOURCE VOLTAGE

PH1214-80M

TRANSISTOR

NSN, MFG P/N

5961015779318

NSN

5961-01-577-9318

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PH1214-80M

TRANSISTOR

NSN, MFG P/N

5961015779318

NSN

5961-01-577-9318

MFG

MACOM

Description

III END ITEM IDENTIFICATION: RADAR SYSTEM
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.217 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NPN SILICON MICROWAVE POWER TRANSISTORS, COMMON BASE CONFIGURATION, BROADBAND CLASS C OPERATION, HIGH EFFICIENCY INTER-DIGITIZED GEOMETRY, DIFFUSED EMITTER BALLASTING INTER-DIGITIZED GEOMETRYH, DIFFUSED EMITER BALLASTING RESISTORS, GOLD METALLIZATION
~1: SYSTEM, INTERNAL INPUT AND OUTPUT IMPEDANCE MATCHING, HERMETIC METAL/CERAMIC PACKAGE, ROHS COMPLIANT

60HFU-600M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015779497

NSN

5961-01-577-9497

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60HFU-600M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015779497

NSN

5961-01-577-9497

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.456 INCHES MAXIMUM
OVERALL WIDTH: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: D0-5 PKG
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 660.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

LCDA12

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015779580

NSN

5961-01-577-9580

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LCDA12

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015779580

NSN

5961-01-577-9580

MFG

SEMTECH CORPORATION

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: LOW CAPICITANCE TVS DIODE ARRAY

1N6622US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015780944

NSN

5961-01-578-0944

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1N6622US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015780944

NSN

5961-01-578-0944

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

III END ITEM IDENTIFICATION: FRENCH ARMED FORCES
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ULTR FAST RECTIFIER
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 2.155 INCHES MINIMUM

99212407

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015780944

NSN

5961-01-578-0944

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99212407

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015780944

NSN

5961-01-578-0944

MFG

THALES

Description

III END ITEM IDENTIFICATION: FRENCH ARMED FORCES
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ULTR FAST RECTIFIER
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 2.155 INCHES MINIMUM

FJH1100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781100

NSN

5961-01-578-1100

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FJH1100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781100

NSN

5961-01-578-1100

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

III END ITEM IDENTIFICATION: 472274-002
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
SPECIAL FEATURES: STORAGE TEMPERATURE NEGATIVE 55 TO POSITIVE 200 DEGRES CELCIUS;OPERATING JUNCTION TEMPERATURE 175 DEGREES CELCIUS;ULTRA LOW LEAKAGE IN A DO35 PACKAGE

MMDF3N02HDR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781534

NSN

5961-01-578-1534

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MMDF3N02HDR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781534

NSN

5961-01-578-1534

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL DARK CURRENT
OVERALL HEIGHT: 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: POWER MOSFET 3 AMP, 20VDC; N CHANNEL; 8 PIN DUAL SO-8 PKG; SURFACE MOUNT; FOR LO VOLTAGE/HIGH SPEED SWITCHING; 2500/TAPE AND REEL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE

NUP1301ML3T1G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781537

NSN

5961-01-578-1537

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NUP1301ML3T1G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781537

NSN

5961-01-578-1537

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES NOMINAL FORWARD CURRENT, DC
OVERALL HEIGHT: 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.104 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

IRFP250A

TRANSISTOR

NSN, MFG P/N

5961015781727

NSN

5961-01-578-1727

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IRFP250A

TRANSISTOR

NSN, MFG P/N

5961015781727

NSN

5961-01-578-1727

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

III END ITEM IDENTIFICATION: AIR DEFENSE SYSTEM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ADVANCED POWER MOSFET
SPECIAL FEATURES: N CHANNEL POWER MOSFET, AVALANCHE RUGGED TECHNOLOGY, RUGGED GATE OXIDE TECHNOLOGY, LOWER INPUT CAPACITANCE, IMPROVED GATE CHARGE, EXTENDED SAFE OPERATING AREA

SA24A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781805

NSN

5961-01-578-1805

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SA24A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781805

NSN

5961-01-578-1805

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 12.80 AMPERES NOMINAL PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 26.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 29.5 MAXIMUM BREAKDOWN VOLTAGE, DC

1.5SMC20AT3G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781882

NSN

5961-01-578-1882

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1.5SMC20AT3G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015781882

NSN

5961-01-578-1882

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: CLIP
OVERALL LENGTH: 7.7 MILLIMETERS MINIMUM AND 8.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.5 MILLIMETERS MINIMUM AND 6.1 MILLIMETERS MAXIMUM
SPECIAL FEATURES: 1.5SMC20A; 1500 WATT SMC TRANSIENT VOLTAGE SUPPRESSORS 20 V UNIDIR

IRF3205S

TRANSISTOR

NSN, MFG P/N

5961015782049

NSN

5961-01-578-2049

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IRF3205S

TRANSISTOR

NSN, MFG P/N

5961015782049

NSN

5961-01-578-2049

MFG

INTERNATIONAL RECTIFIER CORP SEMICONDUCTOR DIV

Description

III END ITEM IDENTIFICATION: AIR DEFENSE SYSTEM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
SPECIAL FEATURES: ULTRA LOW ON RESISTANCE, DYNAMIC DV DT RATING, 175 DEGREES C OPERATING TEMPERATURE, FAST SWITCHING, FULLY AVALANDE RATED

500K2616

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015782088

NSN

5961-01-578-2088

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500K2616

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015782088

NSN

5961-01-578-2088

MFG

TYONEK FABRICATION CORPORATION

GBPC1206

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015782088

NSN

5961-01-578-2088

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GBPC1206

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015782088

NSN

5961-01-578-2088

MFG

GENERAL SEMICONDUCTOR INC

99209551

TRANSISTOR

NSN, MFG P/N

5961015782171

NSN

5961-01-578-2171

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99209551

TRANSISTOR

NSN, MFG P/N

5961015782171

NSN

5961-01-578-2171

MFG

THALES

Description

III END ITEM IDENTIFICATION: USE IN RF AMPLIFIERS, MIXERS AND OSCILLATORS WITH SIGNAL FREQUENCIES UP TO 1 GHZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN 5 GHZ WIDEBAND TRANSISTOR
SPECIAL FEATURES: JUNCTION TEMP: 150 DEG C