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5961-01-578-2171
20 Products
BFR92AW
TRANSISTOR
NSN, MFG P/N
5961015782171
NSN
5961-01-578-2171
MFG
PHILIPS SEMICONDUCTORS INC
Description
III END ITEM IDENTIFICATION: USE IN RF AMPLIFIERS, MIXERS AND OSCILLATORS WITH SIGNAL FREQUENCIES UP TO 1 GHZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN 5 GHZ WIDEBAND TRANSISTOR
SPECIAL FEATURES: JUNCTION TEMP: 150 DEG C
Related Searches:
1.5KE100CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778396
NSN
5961-01-577-8396
1.5KE100CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778396
NSN
5961-01-577-8396
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: MARITIME SYSTEMS
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR
Related Searches:
ZL7354/31002/0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778396
NSN
5961-01-577-8396
ZL7354/31002/0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015778396
NSN
5961-01-577-8396
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
III END ITEM IDENTIFICATION: MARITIME SYSTEMS
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR
Related Searches:
DSI17-12A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015778824
NSN
5961-01-577-8824
DSI17-12A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015778824
NSN
5961-01-577-8824
MFG
IXYS CORPORATION
Description
OVERALL LENGTH: 31.3 MILLIMETERS NOMINAL
OVERALL WIDTH: 11.0 MILLIMETERS NOMINAL
PART NAME ASSIGNED BY CONTROLLING AGENCY: AVALANCHE DIODE
SPECIAL FEATURES: INTERNATIONAL STANDARD PACKAGE,JEDEC DO-203 AA (DO-4);PLANAR GLASSIVATED CHIPS.APPLICATIONS:SUPPLIES FOR DC POWER EQUIPMENT,DC SUPPLY FOR PWM INVERTER,FIELD SUPPLY FOR DC MOTORS,BATTERY DC POWER SUPPLIES
Related Searches:
MC14049BCP
TRANSISTOR
NSN, MFG P/N
5961015779091
NSN
5961-01-577-9091
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: DUAL POWER MOSFET, P-CHANNEL POLARITY; TMOS; FIELD EFFECT XSISTOR; 90 MGOHM MAX RDS; 630PF AT 16VDC; 2 WATT; HI SPEED SWITCH; SURFACE MTD; CONTAINS LEAD; OP TEMP M55/P150 DEG C
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL ON-STATE DRAIN TO SOURCE VOLTAGE
Related Searches:
PH1214-80M
TRANSISTOR
NSN, MFG P/N
5961015779318
NSN
5961-01-577-9318
MFG
MACOM
Description
III END ITEM IDENTIFICATION: RADAR SYSTEM
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.217 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NPN SILICON MICROWAVE POWER TRANSISTORS, COMMON BASE CONFIGURATION, BROADBAND CLASS C OPERATION, HIGH EFFICIENCY INTER-DIGITIZED GEOMETRY, DIFFUSED EMITTER BALLASTING INTER-DIGITIZED GEOMETRYH, DIFFUSED EMITER BALLASTING RESISTORS, GOLD METALLIZATION
~1: SYSTEM, INTERNAL INPUT AND OUTPUT IMPEDANCE MATCHING, HERMETIC METAL/CERAMIC PACKAGE, ROHS COMPLIANT
Related Searches:
60HFU-600M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015779497
NSN
5961-01-577-9497
60HFU-600M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015779497
NSN
5961-01-577-9497
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.456 INCHES MAXIMUM
OVERALL WIDTH: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: D0-5 PKG
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 660.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
LCDA12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015779580
NSN
5961-01-577-9580
LCDA12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015779580
NSN
5961-01-577-9580
MFG
SEMTECH CORPORATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: LOW CAPICITANCE TVS DIODE ARRAY
Related Searches:
1N6622US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015780944
NSN
5961-01-578-0944
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: FRENCH ARMED FORCES
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ULTR FAST RECTIFIER
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 2.155 INCHES MINIMUM
Related Searches:
99212407
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015780944
NSN
5961-01-578-0944
MFG
THALES
Description
III END ITEM IDENTIFICATION: FRENCH ARMED FORCES
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ULTR FAST RECTIFIER
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 2.155 INCHES MINIMUM
Related Searches:
FJH1100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781100
NSN
5961-01-578-1100
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III END ITEM IDENTIFICATION: 472274-002
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
SPECIAL FEATURES: STORAGE TEMPERATURE NEGATIVE 55 TO POSITIVE 200 DEGRES CELCIUS;OPERATING JUNCTION TEMPERATURE 175 DEGREES CELCIUS;ULTRA LOW LEAKAGE IN A DO35 PACKAGE
Related Searches:
MMDF3N02HDR2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781534
NSN
5961-01-578-1534
MMDF3N02HDR2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781534
NSN
5961-01-578-1534
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL DARK CURRENT
OVERALL HEIGHT: 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: POWER MOSFET 3 AMP, 20VDC; N CHANNEL; 8 PIN DUAL SO-8 PKG; SURFACE MOUNT; FOR LO VOLTAGE/HIGH SPEED SWITCHING; 2500/TAPE AND REEL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
NUP1301ML3T1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781537
NSN
5961-01-578-1537
NUP1301ML3T1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781537
NSN
5961-01-578-1537
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES NOMINAL FORWARD CURRENT, DC
OVERALL HEIGHT: 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.104 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
IRFP250A
TRANSISTOR
NSN, MFG P/N
5961015781727
NSN
5961-01-578-1727
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III END ITEM IDENTIFICATION: AIR DEFENSE SYSTEM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ADVANCED POWER MOSFET
SPECIAL FEATURES: N CHANNEL POWER MOSFET, AVALANCHE RUGGED TECHNOLOGY, RUGGED GATE OXIDE TECHNOLOGY, LOWER INPUT CAPACITANCE, IMPROVED GATE CHARGE, EXTENDED SAFE OPERATING AREA
Related Searches:
SA24A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781805
NSN
5961-01-578-1805
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 12.80 AMPERES NOMINAL PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 26.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 29.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1.5SMC20AT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781882
NSN
5961-01-578-1882
1.5SMC20AT3G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015781882
NSN
5961-01-578-1882
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: CLIP
OVERALL LENGTH: 7.7 MILLIMETERS MINIMUM AND 8.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.5 MILLIMETERS MINIMUM AND 6.1 MILLIMETERS MAXIMUM
SPECIAL FEATURES: 1.5SMC20A; 1500 WATT SMC TRANSIENT VOLTAGE SUPPRESSORS 20 V UNIDIR
Related Searches:
IRF3205S
TRANSISTOR
NSN, MFG P/N
5961015782049
NSN
5961-01-578-2049
MFG
INTERNATIONAL RECTIFIER CORP SEMICONDUCTOR DIV
Description
III END ITEM IDENTIFICATION: AIR DEFENSE SYSTEM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
SPECIAL FEATURES: ULTRA LOW ON RESISTANCE, DYNAMIC DV DT RATING, 175 DEGREES C OPERATING TEMPERATURE, FAST SWITCHING, FULLY AVALANDE RATED
Related Searches:
500K2616
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015782088
NSN
5961-01-578-2088
500K2616
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015782088
NSN
5961-01-578-2088
MFG
TYONEK FABRICATION CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
GBPC1206
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015782088
NSN
5961-01-578-2088
GBPC1206
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015782088
NSN
5961-01-578-2088
MFG
GENERAL SEMICONDUCTOR INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
99209551
TRANSISTOR
NSN, MFG P/N
5961015782171
NSN
5961-01-578-2171
MFG
THALES
Description
III END ITEM IDENTIFICATION: USE IN RF AMPLIFIERS, MIXERS AND OSCILLATORS WITH SIGNAL FREQUENCIES UP TO 1 GHZ
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN 5 GHZ WIDEBAND TRANSISTOR
SPECIAL FEATURES: JUNCTION TEMP: 150 DEG C
