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5961-01-520-5116
20 Products
SMCJ40CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205116
NSN
5961-01-520-5116
MFG
GENERAL SEMICONDUCTOR INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,15VWM,1.5KW,BI,TVS,DO-214AB PACKAGE
Related Searches:
1.5KE56CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205122
NSN
5961-01-520-5122
MFG
GENERAL SEMICONDUCTOR INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,53.2/58.8 VBR,1.5KW,BI,TVS,PACKAGE STYL;CASE 41A OR 1.5KE
Related Searches:
356A1351P48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205122
NSN
5961-01-520-5122
356A1351P48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205122
NSN
5961-01-520-5122
MFG
BAE SYSTEMS CONTROLS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,53.2/58.8 VBR,1.5KW,BI,TVS,PACKAGE STYL;CASE 41A OR 1.5KE
Related Searches:
HFM48BC50
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015205125
NSN
5961-01-520-5125
HFM48BC50
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015205125
NSN
5961-01-520-5125
MFG
EXPO POWER SYSTEMS INC. DBA ENVIROGUARD
Description
III END ITEM IDENTIFICATION: COMMAND TRANSMITTER-1 AUDIO
SPECIAL FEATURES: REQUESTED NAME MODULAR,RECTIFIER
356A1451P2
TRANSISTOR
NSN, MFG P/N
5961015205130
NSN
5961-01-520-5130
MFG
BAE SYSTEMS CONTROLS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,75V,200MA SWITCHING,SOT-23 PACKAGE
Related Searches:
BAS16LT1
TRANSISTOR
NSN, MFG P/N
5961015205130
NSN
5961-01-520-5130
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,75V,200MA SWITCHING,SOT-23 PACKAGE
Related Searches:
356A1451P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205132
NSN
5961-01-520-5132
356A1451P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205132
NSN
5961-01-520-5132
MFG
BAE SYSTEMS CONTROLS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVETVS/ZENER DEVICE
Related Searches:
MMSZ5245BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205132
NSN
5961-01-520-5132
MMSZ5245BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015205132
NSN
5961-01-520-5132
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVETVS/ZENER DEVICE
Related Searches:
356A1450P32
TRANSISTOR
NSN, MFG P/N
5961015205490
NSN
5961-01-520-5490
MFG
BAE SYSTEMS CONTROLS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,200V,4.8A,0.800R,P CHAN,TO-252AA DPAK
Related Searches:
IRFR220
TRANSISTOR
NSN, MFG P/N
5961015205490
NSN
5961-01-520-5490
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE,200V,4.8A,0.800R,P CHAN,TO-252AA DPAK
Related Searches:
1SMC51A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015206272
NSN
5961-01-520-6272
MFG
GENERAL SEMICONDUCTOR INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRASIENT VOLTAGE SUPPRESSORS
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
Related Searches:
P0000030
SCHEIBE,ISOLIER
NSN, MFG P/N
5961015207481
NSN
5961-01-520-7481
MFG
F E L CORP
Description
III END ITEM IDENTIFICATION: PROCESSOR, RADAR TARGET DATA
Related Searches:
92936-00-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015208268
NSN
5961-01-520-8268
92936-00-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015208268
NSN
5961-01-520-8268
MFG
BASLER ELECTRIC COMPANY
Description
DESIGN CONTROL REFERENCE: 92936-00-101
III END ITEM IDENTIFICATION: SWITCHBOARD-THRUSTER P/N LC-04-600-THRUSTER/MOD
MANUFACTURERS CODE: 97520
SPECIAL FEATURES: DIODE ASSEMBLY, FREE WHEELING
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N4990
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015208795
NSN
5961-01-520-8795
JANTX1N4990
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015208795
NSN
5961-01-520-8795
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 21.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4990
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: F-15 AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2330-0915
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015209733
NSN
5961-01-520-9733
2330-0915
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015209733
NSN
5961-01-520-9733
MFG
CIRCOR AEROSPACE INC. DBA CIRCLE SEAL CONTROLS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
MDD220.14N1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961015210369
NSN
5961-01-521-0369
MFG
IXYS CORPORATION
Description
OVERALL LENGTH: 116.0 MILLIMETERS NOMINAL ALL SEMICONDUCTOR
OVERALL WIDTH: 60.0 MILLIMETERS NOMINAL ALL SEMICONDUCTOR
Related Searches:
MEK 350-02 DA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015210665
NSN
5961-01-521-0665
MEK 350-02 DA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015210665
NSN
5961-01-521-0665
MFG
IXYS CORPORATION
Description
OVERALL LENGTH: 94.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 34.0 MILLIMETERS NOMINAL
Related Searches:
ECG285MCP
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961015211582
NSN
5961-01-521-1582
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS ALL TRANSISTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL DIAMETER: 0.875 INCHES MAXIMUM ALL TRANSISTOR
OVERALL HEIGHT: 0.350 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 2 PIN ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
0C0047
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015212212
NSN
5961-01-521-2212
0C0047
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015212212
NSN
5961-01-521-2212
MFG
AMERICAN POWER CONVERSION CORPORATION
Description
III END ITEM IDENTIFICATION: POWER SUPPLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR-SWITCH MODULE
SPECIAL FEATURES: 15KW; 3 PHASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL SOURCE SUPPLY VOLTAGE SINGLE TRANSISTOR
Related Searches:
P89C557E4FB
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015212928
NSN
5961-01-521-2928
P89C557E4FB
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015212928
NSN
5961-01-521-2928
MFG
PHILIPS SEMICONDUCTORS INC
Description
MAJOR COMPONENTS: 12C-BUS SERIAL I/0 PORT, 80CS1 CENTRAL PROCESSING UNIT
