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5961-01-581-7056
20 Products
03002A1784-1
RECTIFIER BREAKER B
NSN, MFG P/N
5961015817056
NSN
5961-01-581-7056
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
SPECIAL FEATURES: RECTIFIER BREAKER BOX ASSY
Related Searches:
25-8NF407-503A
TRANSISTOR
NSN, MFG P/N
5961015812032
NSN
5961-01-581-2032
MFG
HAWKER BEECHCRAFT CORPORATION
Description
TRANSISTOR
Related Searches:
0912-7
TRANSISTOR
NSN, MFG P/N
5961015812519
NSN
5961-01-581-2519
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DWG: RF TRANSISTOR; CAGE: 7 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ, COMMON BASE BIPOLAR TRANSISTOR
III PRECIOUS MATERIAL AND LOCATION: THIN FILM METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC AND 7.0 WATTS MINIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
C84346-001
TRANSISTOR
NSN, MFG P/N
5961015812519
NSN
5961-01-581-2519
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DWG: RF TRANSISTOR; CAGE: 7 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ, COMMON BASE BIPOLAR TRANSISTOR
III PRECIOUS MATERIAL AND LOCATION: THIN FILM METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC AND 7.0 WATTS MINIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
0912-45
TRANSISTOR
NSN, MFG P/N
5961015812531
NSN
5961-01-581-2531
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DWG: RF TRANSISTOR; CAGE: 45 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ; COMMON BASE BIPOLAR TRANSISTOR
III PRECIOUS MATERIAL AND LOCATION: THIN-FILM METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 225.0 WATTS MAXIMUM TOTAL POWER DISSIPATION AND 45.0 WATTS MINIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
C84224-001
TRANSISTOR
NSN, MFG P/N
5961015812531
NSN
5961-01-581-2531
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DWG: RF TRANSISTOR; CAGE: 45 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ; COMMON BASE BIPOLAR TRANSISTOR
III PRECIOUS MATERIAL AND LOCATION: THIN-FILM METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 225.0 WATTS MAXIMUM TOTAL POWER DISSIPATION AND 45.0 WATTS MINIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
CA35762-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015812897
NSN
5961-01-581-2897
CA35762-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015812897
NSN
5961-01-581-2897
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, PIN; CAGE: 19156: RF POWER LIMITER; CAGE 24539: SURFACE MOUNT RF PIN LIMITER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.7 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.2 MILLIMETERS MINIMUM AND 2.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HSMP-4820
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015812897
NSN
5961-01-581-2897
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, PIN; CAGE: 19156: RF POWER LIMITER; CAGE 24539: SURFACE MOUNT RF PIN LIMITER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.7 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.2 MILLIMETERS MINIMUM AND 2.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
38008-40026-10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015812972
NSN
5961-01-581-2972
38008-40026-10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015812972
NSN
5961-01-581-2972
MFG
AAI CORPORATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE HEADER ASSEMBLY
MAJOR COMPONENTS: SEVEN DIODES MOUNTED ON HEADER ASSEMBLY
OVERALL HEIGHT: 0.880 INCHES NOMINAL
OVERALL LENGTH: 2.580 INCHES NOMINAL
OVERALL WIDTH: 1.790 INCHES NOMINAL
Related Searches:
743-150X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015814467
NSN
5961-01-581-4467
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MUR115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015814878
NSN
5961-01-581-4878
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: MUR115
MANUFACTURERS CODE: 04713
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
628174-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815097
NSN
5961-01-581-5097
MFG
VISHAY ANGSTROHM PRECISION INC DBA VISHAY ANGSTROHM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CA35754-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815164
NSN
5961-01-581-5164
CA35754-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815164
NSN
5961-01-581-5164
MFG
MOOG INC.
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: CA70806-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, ZENER, 5.59V; CAGE: SURFACE MOUNT PRECISION ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-123
MANUFACTURERS CODE: 19156
MFR SOURCE CONTROLLING REFERENCE: CA35754-003
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 1.0 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.6 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.7 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ZENER VOLTAGE RANGE: 5.45 - 5.73 VOLTS; LEAD, ANTIMONY AND HALOGEN FREE; ROHS COMPLIANT; "GREEN" DEVICE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
DDZ5V6B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815164
NSN
5961-01-581-5164
MFG
DIODES INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: CA70806-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, ZENER, 5.59V; CAGE: SURFACE MOUNT PRECISION ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-123
MANUFACTURERS CODE: 19156
MFR SOURCE CONTROLLING REFERENCE: CA35754-003
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 1.0 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.6 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.7 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ZENER VOLTAGE RANGE: 5.45 - 5.73 VOLTS; LEAD, ANTIMONY AND HALOGEN FREE; ROHS COMPLIANT; "GREEN" DEVICE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
MUR8100E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815270
NSN
5961-01-581-5270
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIAL FEATURES: 20 MJ AVALANCHE ENERGY GUARANTEED; ULTRAFAST 75 NANOSECOND RECOVERY TIME; 175 DEGREE CELSIUS OPERATING JUNCTION TEMPERATURE; TO-220 PACKAGE; EPOXY MEETS UL94 V-0 AT 0.125 INCHES; LOW FORWARD VOLTAGE; LOW LEAKAGE CURRENT; HIGH TEMPERATURE GLASS PASSIVATED
~1: JUNCTION; REVERSE VOLTAGE TO 1000 V
Related Searches:
DIO000007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815299
NSN
5961-01-581-5299
MFG
CLARKE HESS COMMUNICATION RESEARCH CORP
Description
III END ITEM IDENTIFICATION: 2510A (34423), PHASE ANGLE VOLTMETER (NSN 6625-01-560-8593)
Related Searches:
DIO000005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015815304
NSN
5961-01-581-5304
MFG
CLARKE HESS COMMUNICATION RESEARCH CORP
Description
III END ITEM IDENTIFICATION: 2510A (34423), PHASE ANGLE VOLTMETER (NSN 6625-01-560-8593)
Related Searches:
MBRD660CTG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015816089
NSN
5961-01-581-6089
MBRD660CTG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015816089
NSN
5961-01-581-6089
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE; 6A 60V SCHOTTKY RECTIFIER
SPECIAL FEATURES: EXTREMELY FAST SWITCHING; EXTREMELY LOW FORWARD DROP; PLATINUM BARRIER WITH AVALANCHE GUARDRINGS; DPAK 4 LEAD SINGLE GUAGE SURFACE MOUNT; 4 PINS; RAIL TYPE
Related Searches:
SI6933DQ-T1-E3
TRANSISTOR
NSN, MFG P/N
5961015816097
NSN
5961-01-581-6097
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR; DUAL P-CHANNEL 30-V (D-S) MOSFET
SPECIAL FEATURES: HALOGEN-FREE; ROHS COMPLIANT; DRAIN-SOURCE VOLTAGE -30V; GATE-SOURCE VOLTAGE PORM 20V
Related Searches:
B1954
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015816184
NSN
5961-01-581-6184
MFG
EDAL INDUSTRIES INC.
Description
III END ITEM IDENTIFICATION: RECTIFIER
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.127 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON CARTRIDGE RECTIFIER
