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5980-00-910-0260
20 Products
327-929
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5980009100260
NSN
5980-00-910-0260
327-929
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5980009100260
NSN
5980-00-910-0260
MFG
CMC ELECTRONICS INC
Description
MAJOR COMPONENTS: PHOTO DIODE 1,PHOTO CELL 1,SLEEVING 1,HOLDER 1
Related Searches:
968-1D931
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008909718
NSN
5980-00-890-9718
MFG
GAP INSTRUMENT CORP
Description
INCLOSURE MATERIAL: PLASTIC, EPOXY RESIN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.212 INCHES MAXIMUM
OVERALL LENGTH: 0.212 INCHES MAXIMUM
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
USAGE DESIGN: INDOOR
Related Searches:
NSL710P
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008909718
NSN
5980-00-890-9718
MFG
SILONEX INC
Description
INCLOSURE MATERIAL: PLASTIC, EPOXY RESIN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.212 INCHES MAXIMUM
OVERALL LENGTH: 0.212 INCHES MAXIMUM
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
USAGE DESIGN: INDOOR
Related Searches:
TCRQS710P
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008909718
NSN
5980-00-890-9718
MFG
COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV
Description
INCLOSURE MATERIAL: PLASTIC, EPOXY RESIN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.212 INCHES MAXIMUM
OVERALL LENGTH: 0.212 INCHES MAXIMUM
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
USAGE DESIGN: INDOOR
Related Searches:
30523A
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008971954
NSN
5980-00-897-1954
MFG
KALART VICTOR CORP
Description
PHOTOELECTRIC CELL
Related Searches:
10601
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008999550
NSN
5980-00-899-9550
MFG
KOLLMORGEN CORP
Description
PHOTOELECTRIC CELL
Related Searches:
SPR9-10BPL
PHOTOELECTRIC CELL
NSN, MFG P/N
5980008999550
NSN
5980-00-899-9550
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
PHOTOELECTRIC CELL
Related Searches:
1240385-01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009004578
NSN
5980-00-900-4578
1240385-01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009004578
NSN
5980-00-900-4578
MFG
QUANTEGY RECORDING SOLUTIONS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
752-5623-01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009004578
NSN
5980-00-900-4578
752-5623-01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009004578
NSN
5980-00-900-4578
MFG
NORTHERN TELECOM INC TELECOM DISTRIBUTION DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
EA7E2
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009004578
NSN
5980-00-900-4578
MFG
N A P SMD TECHNOLOGY INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
A25A990-308-101
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009013192
NSN
5980-00-901-3192
A25A990-308-101
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009013192
NSN
5980-00-901-3192
MFG
GOODYEAR TIRE AND RUBBER CO THE
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
LS403
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009013192
NSN
5980-00-901-3192
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
280010
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009020561
NSN
5980-00-902-0561
MFG
KEWANEE BOILER CORP
Description
INCLOSURE MATERIAL: POLYCRYSTALLINE CADMIUM SELENIDE
USAGE DESIGN: INDOOR
Related Searches:
C7013A
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009020561
NSN
5980-00-902-0561
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL
Description
INCLOSURE MATERIAL: POLYCRYSTALLINE CADMIUM SELENIDE
USAGE DESIGN: INDOOR
Related Searches:
C7013A-1003
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009020561
NSN
5980-00-902-0561
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL
Description
INCLOSURE MATERIAL: POLYCRYSTALLINE CADMIUM SELENIDE
USAGE DESIGN: INDOOR
Related Searches:
C7013A1003
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009020561
NSN
5980-00-902-0561
MFG
HONEYWELL INC RESIDENTIAL DIV
Description
INCLOSURE MATERIAL: POLYCRYSTALLINE CADMIUM SELENIDE
USAGE DESIGN: INDOOR
Related Searches:
CL903N
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009028488
NSN
5980-00-902-8488
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
PHOTOELECTRIC CELL
Related Searches:
B87T0003-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009047580
NSN
5980-00-904-7580
B87T0003-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009047580
NSN
5980-00-904-7580
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
P102
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009047580
NSN
5980-00-904-7580
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1093-554
PHOTOELECTRIC CELL
NSN, MFG P/N
5980009097380
NSN
5980-00-909-7380
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
PHOTOELECTRIC CELL
