My Quote Request
No products added yet
5980-01-206-2865
20 Products
600445
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012062865
NSN
5980-01-206-2865
MFG
CANBERRA INDUSTRIES INC.
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
GL-4850
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012038289
NSN
5980-01-203-8289
MFG
SIEMENS PLC SPECIAL PROJECTS GROUP
Description
COLOR TONE PRODUCED PER SOURCE: GREEN SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 20.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
GL4850
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012038289
NSN
5980-01-203-8289
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
COLOR TONE PRODUCED PER SOURCE: GREEN SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 20.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
LDG5171
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012038289
NSN
5980-01-203-8289
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
COLOR TONE PRODUCED PER SOURCE: GREEN SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 20.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
CQX21
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012038290
NSN
5980-01-203-8290
MFG
AEG CORP
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 1.6 MILLICANDELA NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 8.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 26.6 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
T-251-483
DISPLAY,OPTOELECTRONIC
NSN, MFG P/N
5980012040372
NSN
5980-01-204-0372
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CHARACTER QUANTITY PER LINE: 2
CHARACTER TYPE: NUMERIC
DISPLAY COLOR: ORANGE
DISPLAY TYPE: LIGHT EMITTING DIODE
LINE QUANTITY: 1
LUMINOUS INTENSITY: 510.0 MICROCANDELA MINIMUM
OVERALL LENGTH: 2.940 INCHES NOMINAL
SPECIAL FEATURES: MTG BOARD AND MTG HARDWARE
TERMINAL TYPE AND QUANTITY: 18 PIN
Related Searches:
208000102
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012042850
NSN
5980-01-204-2850
MFG
TRUE DATA CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
208000103
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012042850
NSN
5980-01-204-2850
MFG
TRUE DATA CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
MEK-55-RED96-AAF
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012044642
NSN
5980-01-204-4642
MEK-55-RED96-AAF
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012044642
NSN
5980-01-204-4642
MFG
MEKONTROL INC
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
A1-11-0176
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012044658
NSN
5980-01-204-4658
MFG
ACR ELECTRONICS INC .
Description
COLOR TONE PRODUCED PER SOURCE: GREEN LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
XC5059G
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012044658
NSN
5980-01-204-4658
MFG
XCITON CORP
Description
COLOR TONE PRODUCED PER SOURCE: GREEN LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
12554631
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012046812
NSN
5980-01-204-6812
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.230 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
HLMP-0101
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012046812
NSN
5980-01-204-6812
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.230 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
CLM6200
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012049548
NSN
5980-01-204-9548
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
OVERALL LENGTH: 1.450 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
NSL32AA
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012049548
NSN
5980-01-204-9548
MFG
SILONEX INC
Description
OVERALL LENGTH: 1.450 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
4N31
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980012057293
NSN
5980-01-205-7293
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NPN PHOTOTRANSISTOR; PN INFRARED EMITTING DIODE; GALLIUM ARSENIDE LED; SILICON PHOTO DARLINGTON TRANSISTOR; 250 MW; 80 MA; 30 VOLTS; MINUS 55 DEG C TO PLUS 100 DEG C OPERATING JUNCTION TEMPERATURE RANGE; 6 TERMINALS; 0.350 IN. LG; 0.300 IN. W; 0.200 IN. H
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6464 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
Related Searches:
RELEASE 6464
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980012057293
NSN
5980-01-205-7293
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NPN PHOTOTRANSISTOR; PN INFRARED EMITTING DIODE; GALLIUM ARSENIDE LED; SILICON PHOTO DARLINGTON TRANSISTOR; 250 MW; 80 MA; 30 VOLTS; MINUS 55 DEG C TO PLUS 100 DEG C OPERATING JUNCTION TEMPERATURE RANGE; 6 TERMINALS; 0.350 IN. LG; 0.300 IN. W; 0.200 IN. H
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6464 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
Related Searches:
TIL232-2
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012062757
NSN
5980-01-206-2757
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: GREEN SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 1.3 MILLICANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL LENGTH: 0.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
186318-4
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012062865
NSN
5980-01-206-2865
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
521-9222
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012062865
NSN
5980-01-206-2865
MFG
DIALIGHT CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM FORWARD VOLTAGE, DC
