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5961-01-497-8800
20 Products
26MT120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014978800
NSN
5961-01-497-8800
26MT120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014978800
NSN
5961-01-497-8800
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: FRIGATE F124, MULTIFUNCTION RADAR APAR, THALES NEDERLAND
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MA4T645-535
TRANSISTOR
NSN, MFG P/N
5961014978839
NSN
5961-01-497-8839
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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VA-75-0534-001
TRANSISTOR
NSN, MFG P/N
5961014978839
NSN
5961-01-497-8839
MFG
SELEX GALILEO LTD
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MA40176
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014978842
NSN
5961-01-497-8842
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FUNCTION FOR WHICH DESIGNED: MIXER
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: STRIPLINE PACKAGED SCHOTTKY MIXER DIODE; OPERATING TEMPERATURE MINUS 65 DEG. C TO PLUS 150 DEG. C
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VA-70-0498-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014978842
NSN
5961-01-497-8842
VA-70-0498-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014978842
NSN
5961-01-497-8842
MFG
SELEX GALILEO LTD
Description
FUNCTION FOR WHICH DESIGNED: MIXER
INCLOSURE MATERIAL: CERAMIC
SPECIAL FEATURES: STRIPLINE PACKAGED SCHOTTKY MIXER DIODE; OPERATING TEMPERATURE MINUS 65 DEG. C TO PLUS 150 DEG. C
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DZ12V70E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979546
NSN
5961-01-497-9546
MFG
WAYNE KERR ELECTRONICS INC
Description
III END ITEM IDENTIFICATION: 6625-01-458-5920; GENERAL PURPOSE ELECT TEST EQUIP, GPETE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.790 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.500 MINIMUM NOMINAL REGULATOR VOLTAGE AND 2.900 MAXIMUM NOMINAL REGULATOR VOLTAGE
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ZPD2.7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979546
NSN
5961-01-497-9546
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: 6625-01-458-5920; GENERAL PURPOSE ELECT TEST EQUIP, GPETE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.790 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.500 MINIMUM NOMINAL REGULATOR VOLTAGE AND 2.900 MAXIMUM NOMINAL REGULATOR VOLTAGE
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DBW02M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014979559
NSN
5961-01-497-9559
DBW02M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014979559
NSN
5961-01-497-9559
MFG
WAYNE KERR ELECTRONICS INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES FORWARD CURRENT, AVERAGE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 6625-01-458-5920;GERERAL PURPOSE ELECT TEST EQUIP. GPETE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.348 INCHES MINIMUM AND 0.388 INCHES MAXIMUM
SPECIAL FEATURES: GLASS PASSIVATED CHIP JUNCTION
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
W02G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014979559
NSN
5961-01-497-9559
W02G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014979559
NSN
5961-01-497-9559
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES FORWARD CURRENT, AVERAGE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 6625-01-458-5920;GERERAL PURPOSE ELECT TEST EQUIP. GPETE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.348 INCHES MINIMUM AND 0.388 INCHES MAXIMUM
SPECIAL FEATURES: GLASS PASSIVATED CHIP JUNCTION
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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GC42054-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979979
NSN
5961-01-497-9979
GC42054-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979979
NSN
5961-01-497-9979
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
INCLOSURE MATERIAL: CERAMIC
SEMICONDUCTOR MATERIAL: SILICON
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VA-70-0510-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979979
NSN
5961-01-497-9979
VA-70-0510-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979979
NSN
5961-01-497-9979
MFG
SELEX GALILEO LTD
Description
INCLOSURE MATERIAL: CERAMIC
SEMICONDUCTOR MATERIAL: SILICON
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GC4711-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979982
NSN
5961-01-497-9982
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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VA-70-0509-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979982
NSN
5961-01-497-9982
VA-70-0509-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014979982
NSN
5961-01-497-9982
MFG
SELEX GALILEO LTD
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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S10A360FRX
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014980037
NSN
5961-01-498-0037
S10A360FRX
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014980037
NSN
5961-01-498-0037
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
III END ITEM IDENTIFICATION: TORNADO 54.0053.100.00, TSPJ, EADS DEUTSCHLAND GMBH
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.785 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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2N6392
TRANSISTOR
NSN, MFG P/N
5961014980045
NSN
5961-01-498-0045
MFG
AMERICAN SEMICONDUCTOR EQUIPMENT TECHNOLOGIES
Description
MOUNTING METHOD: UNTHREADED HOLE
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D29-0011-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014980424
NSN
5961-01-498-0424
D29-0011-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014980424
NSN
5961-01-498-0424
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
SPECIAL FEATURES: THYRISTOR, SCR, 1200V, 175A
Related Searches:
5616143
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961014980614
NSN
5961-01-498-0614
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: 5616201(53711), PHOT MAST, SENSOR UNIT
SPECIAL FEATURES: NHA AN/BVS-1
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QT-6102-A
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961014980614
NSN
5961-01-498-0614
MFG
KOLLMORGEN CORPORATION DBA DANAHER MOTION DIV
Description
III END ITEM IDENTIFICATION: 5616201(53711), PHOT MAST, SENSOR UNIT
SPECIAL FEATURES: NHA AN/BVS-1
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12418
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014981352
NSN
5961-01-498-1352
MFG
GSE HOLDINGS INC. DBA ITW MILITARY GSE DIV ITW MILITARY GSE
Description
III END ITEM IDENTIFICATION: F/A-22 RAPTOR
SPECIAL FEATURES: ORIGINALLY SUBMITTTED NAME; BRIDGE,DIODE
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3881455-1
RETAINER,THREADED
NSN, MFG P/N
5961014981365
NSN
5961-01-498-1365
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV AEROSPACE - PHOENIX
Description
III END ITEM IDENTIFICATION: F/A-22 RAPTOR
