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5961-01-350-3952

20 Products

SA11134

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013503952

NSN

5961-01-350-3952

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SA11134

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013503952

NSN

5961-01-350-3952

MFG

SEMTECH CORPORATION

RT4549

TRANSISTOR

NSN, MFG P/N

5961013504769

NSN

5961-01-350-4769

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RT4549

TRANSISTOR

NSN, MFG P/N

5961013504769

NSN

5961-01-350-4769

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: SIKORSKY S70B SEAHAWK HELICOPTER

11469219

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504770

NSN

5961-01-350-4770

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11469219

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504770

NSN

5961-01-350-4770

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 11469219
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM VALLEY-POINT VOLTAGE

6C40576

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504771

NSN

5961-01-350-4771

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6C40576

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504771

NSN

5961-01-350-4771

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2 SEAHAWK HELICOPTER

C-6404-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504773

NSN

5961-01-350-4773

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C-6404-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013504773

NSN

5961-01-350-4773

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: SEAHAWK S70B-2 HELICOPTER

676-1S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013504934

NSN

5961-01-350-4934

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676-1S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013504934

NSN

5961-01-350-4934

MFG

MICRO USPD INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.440 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

698-1HR201

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013504936

NSN

5961-01-350-4936

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698-1HR201

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013504936

NSN

5961-01-350-4936

MFG

MICRO USPD INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES MAXIMUM
SPECIAL FEATURES: HIGH RELIABILITY
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

269SPA270

TRANSISTOR

NSN, MFG P/N

5961013505175

NSN

5961-01-350-5175

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269SPA270

TRANSISTOR

NSN, MFG P/N

5961013505175

NSN

5961-01-350-5175

MFG

SOLITRON DEVICES INC.

Description

MANUFACTURERS CODE: 80249
MFR SOURCE CONTROLLING REFERENCE: 915000
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

915000

TRANSISTOR

NSN, MFG P/N

5961013505175

NSN

5961-01-350-5175

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915000

TRANSISTOR

NSN, MFG P/N

5961013505175

NSN

5961-01-350-5175

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

MANUFACTURERS CODE: 80249
MFR SOURCE CONTROLLING REFERENCE: 915000
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

191SPA436

TRANSISTOR

NSN, MFG P/N

5961013505176

NSN

5961-01-350-5176

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191SPA436

TRANSISTOR

NSN, MFG P/N

5961013505176

NSN

5961-01-350-5176

MFG

SOLITRON DEVICES INC.

Description

MANUFACTURERS CODE: 80249
MFR SOURCE CONTROLLING REFERENCE: 915001
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

915001

TRANSISTOR

NSN, MFG P/N

5961013505176

NSN

5961-01-350-5176

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915001

TRANSISTOR

NSN, MFG P/N

5961013505176

NSN

5961-01-350-5176

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

MANUFACTURERS CODE: 80249
MFR SOURCE CONTROLLING REFERENCE: 915001
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

741C5040-42-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013506631

NSN

5961-01-350-6631

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741C5040-42-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013506631

NSN

5961-01-350-6631

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

Description

DESIGN CONTROL REFERENCE: 741C5040-42-120
III END ITEM IDENTIFICATION: F-14 CAFT
MANUFACTURERS CODE: 86360
THE MANUFACTURERS DATA:

KS621K40A41

TRANSISTOR

NSN, MFG P/N

5961013507226

NSN

5961-01-350-7226

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KS621K40A41

TRANSISTOR

NSN, MFG P/N

5961013507226

NSN

5961-01-350-7226

MFG

POWEREX INC

QM400HA1-2H

TRANSISTOR

NSN, MFG P/N

5961013507226

NSN

5961-01-350-7226

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QM400HA1-2H

TRANSISTOR

NSN, MFG P/N

5961013507226

NSN

5961-01-350-7226

MFG

BOULONNAISE ELECTRONIQUE ET COMPOSANTS BELCO

Description

TRANSISTOR

MR754

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013507227

NSN

5961-01-350-7227

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MR754

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013507227

NSN

5961-01-350-7227

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

MPA3001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013507228

NSN

5961-01-350-7228

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MPA3001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013507228

NSN

5961-01-350-7228

MFG

ADVANCED SEMICONDUCTOR INC. DBA A S I

2N5207FILETAGEM

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013507253

NSN

5961-01-350-7253

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2N5207FILETAGEM

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013507253

NSN

5961-01-350-7253

MFG

JOINT ELECTRON DEVICE ENGINEERING COUNCIL

99096641

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013507253

NSN

5961-01-350-7253

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99096641

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013507253

NSN

5961-01-350-7253

MFG

THALES SYSTEMES AEROPORTES S.A

78106

TRANSISTOR

NSN, MFG P/N

5961013508182

NSN

5961-01-350-8182

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78106

TRANSISTOR

NSN, MFG P/N

5961013508182

NSN

5961-01-350-8182

MFG

HARRIS CORP FINDLAY OPNS

Description

INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G319875-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

G319875-1

TRANSISTOR

NSN, MFG P/N

5961013508182

NSN

5961-01-350-8182

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G319875-1

TRANSISTOR

NSN, MFG P/N

5961013508182

NSN

5961-01-350-8182

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G319875-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN