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5961-01-384-9784

20 Products

X0267

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013849784

NSN

5961-01-384-9784

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X0267

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013849784

NSN

5961-01-384-9784

MFG

MAKO COMPRESSORS LLC

7400-01737-0018

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013851624

NSN

5961-01-385-1624

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7400-01737-0018

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013851624

NSN

5961-01-385-1624

MFG

DRS TACTICAL SYSTEMS GLOBAL SERVICES INC.

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
OVERALL HEIGHT: 0.040 INCHES MAXIMUM
OVERALL LENGTH: 0.126 INCHES NOMINAL
OVERALL WIDTH: 0.063 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.5 NOMINAL BREAKDOWN VOLTAGE, DC

VC120618D400

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013851624

NSN

5961-01-385-1624

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VC120618D400

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013851624

NSN

5961-01-385-1624

MFG

AVX CORPORATION

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
OVERALL HEIGHT: 0.040 INCHES MAXIMUM
OVERALL LENGTH: 0.126 INCHES NOMINAL
OVERALL WIDTH: 0.063 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.5 NOMINAL BREAKDOWN VOLTAGE, DC

040073

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852106

NSN

5961-01-385-2106

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040073

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852106

NSN

5961-01-385-2106

MFG

NSGDATACOM INC . DBA NETRIX/PROTEON

Description

FUNCTION FOR WHICH DESIGNED: ZENER DIODE
SPECIAL FEATURES: 7.5V AT 0.25MILLIAMP

040510

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852137

NSN

5961-01-385-2137

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040510

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852137

NSN

5961-01-385-2137

MFG

NSGDATACOM INC . DBA NETRIX/PROTEON

Description

FUNCTION FOR WHICH DESIGNED: SIGNAL DIODE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 200V; 100MILLIAMP

040830

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852185

NSN

5961-01-385-2185

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040830

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852185

NSN

5961-01-385-2185

MFG

NSGDATACOM INC . DBA NETRIX/PROTEON

Description

FUNCTION FOR WHICH DESIGNED: ZENER DIODE
SPECIAL FEATURES: 100V AT 2.5MILLIAMP; 1W

060027

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852298

NSN

5961-01-385-2298

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060027

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013852298

NSN

5961-01-385-2298

MFG

NSGDATACOM INC . DBA NETRIX/PROTEON

Description

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
SPECIAL FEATURES: REG POS ADJUSTABLE; 0.5A

10JQ030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

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10JQ030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.6 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

7051-01858-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

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7051-01858-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

MFG

DRS TACTICAL SYSTEMS GLOBAL SERVICES INC.

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.6 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

E10QS03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

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E10QS03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853246

NSN

5961-01-385-3246

MFG

NIHON INTERNATIONAL ELECTRONICS CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.6 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

500-10005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853251

NSN

5961-01-385-3251

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500-10005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013853251

NSN

5961-01-385-3251

MFG

BALDOR ELECTRIC COMPANY DBA BALDOR GENERATOR DIV BALDOR GENERATORS

1N3595

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013854231

NSN

5961-01-385-4231

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1N3595

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013854231

NSN

5961-01-385-4231

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

84704000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013854231

NSN

5961-01-385-4231

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84704000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013854231

NSN

5961-01-385-4231

MFG

L-3 COMMUNICATIONS CORPORATION DBA NARDA MICROWAVE EAST

Description

INCLOSURE MATERIAL: CERAMIC OR PLASTIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

473402A18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013854383

NSN

5961-01-385-4383

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473402A18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013854383

NSN

5961-01-385-4383

MFG

SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES

Description

MAJOR COMPONENTS: DIODE 6
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

NH473402A18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013854383

NSN

5961-01-385-4383

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NH473402A18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013854383

NSN

5961-01-385-4383

MFG

DLA LAND AND MARITIME

Description

MAJOR COMPONENTS: DIODE 6
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

7908689-13

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013854461

NSN

5961-01-385-4461

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7908689-13

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013854461

NSN

5961-01-385-4461

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS MAY BE KOVAR OR ALLOY 42 TINNED OR GOLD PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.830 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

GZ26410A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013854461

NSN

5961-01-385-4461

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GZ26410A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013854461

NSN

5961-01-385-4461

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS MAY BE KOVAR OR ALLOY 42 TINNED OR GOLD PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.830 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

TR169-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013856563

NSN

5961-01-385-6563

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TR169-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013856563

NSN

5961-01-385-6563

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

III END ITEM IDENTIFICATION: USED ON 4-541-01 POWER SUPPLY

S21160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013857254

NSN

5961-01-385-7254

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S21160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013857254

NSN

5961-01-385-7254

MFG

SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL LENGTH: 0.947 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
THREAD SERIES DESIGNATOR: UNF

AP129S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013857845

NSN

5961-01-385-7845

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AP129S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013857845

NSN

5961-01-385-7845

MFG

AVON AUTOMOTIVE HOLDINGS, INC. DBA AVON AUTOMOTIVE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 51215-VE479-5011 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, PEAK