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5961-01-384-9784
20 Products
276-1185
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849784
NSN
5961-01-384-9784
276-1185
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849784
NSN
5961-01-384-9784
MFG
RADIOSHACK CORPORATION DBA RADIOSHACK
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
CS-705005-48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013845428
NSN
5961-01-384-5428
CS-705005-48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013845428
NSN
5961-01-384-5428
MFG
SELEX COMMUNICATIONS LTD
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2N5634
TRANSISTOR
NSN, MFG P/N
5961013845956
NSN
5961-01-384-5956
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
1002912-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013846032
NSN
5961-01-384-6032
1002912-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013846032
NSN
5961-01-384-6032
MFG
RANTEC POWER SYSTEMS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
33579
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013846032
NSN
5961-01-384-6032
MFG
TRIO LABORATORIES INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
2N6334
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013846084
NSN
5961-01-384-6084
2N6334
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013846084
NSN
5961-01-384-6084
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.5 MAXIMUM ON-STATE VOLTAGE, PEAK
Related Searches:
JANTX2N6966
TRANSISTOR
NSN, MFG P/N
5961013846933
NSN
5961-01-384-6933
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -15.00 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6966
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DR
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P17-500-150J1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013846939
NSN
5961-01-384-6939
P17-500-150J1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013846939
NSN
5961-01-384-6939
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MRF314A
TRANSISTOR
NSN, MFG P/N
5961013847479
NSN
5961-01-384-7479
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: CAT II ILS (ANGRN27)
Related Searches:
562267M86
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013847564
NSN
5961-01-384-7564
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
040625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013847567
NSN
5961-01-384-7567
MFG
NSGDATACOM INC . DBA NETRIX/PROTEON
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE HELLENIC GENERAL STAFF
III END ITEM IDENTIFICATION: AIR CONDITIONER MODEL FT0-100
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
3100008
TRANSISTOR
NSN, MFG P/N
5961013847580
NSN
5961-01-384-7580
MFG
DATRON WORLD COMMUNICATIONS INC.
Description
TRANSISTOR
Related Searches:
562266-34
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013847634
NSN
5961-01-384-7634
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
562267-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013847661
NSN
5961-01-384-7661
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
320101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013847683
NSN
5961-01-384-7683
MFG
DATRON WORLD COMMUNICATIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
253204-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013849067
NSN
5961-01-384-9067
253204-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013849067
NSN
5961-01-384-9067
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
III END ITEM IDENTIFICATION: ARM DECOY
MAJOR COMPONENTS: TRANSISTORS 2
Related Searches:
JANM19500/469-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849604
NSN
5961-01-384-9604
JANM19500/469-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849604
NSN
5961-01-384-9604
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANM19500/469-02
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
TXM19500/469-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849604
NSN
5961-01-384-9604
TXM19500/469-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013849604
NSN
5961-01-384-9604
MFG
LOCKHEED MARTIN AERONAUTICAL SYSTEMS SUPPORT COMPANY DBA L M A S S C
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANM19500/469-02
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
7051-01695-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013849770
NSN
5961-01-384-9770
7051-01695-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013849770
NSN
5961-01-384-9770
MFG
DRS TACTICAL SYSTEMS GLOBAL SERVICES INC.
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
TMPD6916
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013849770
NSN
5961-01-384-9770
MFG
DEARBORN ELECTRONICS INC.
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
