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5961-00-170-4430

20 Products

000-0000-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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000-0000-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

288A897ARP2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001701866

NSN

5961-00-170-1866

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288A897ARP2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001701866

NSN

5961-00-170-1866

MFG

GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.310 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

D5880BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961001702520

NSN

5961-00-170-2520

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D5880BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961001702520

NSN

5961-00-170-2520

MFG

SKYWORKS SOLUTIONS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MIXER
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.240 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.732 INCHES MINIMUM AND 0.732 INCHES MINIMUM AND 0.766 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: EACH DIODE HAS A REMOVABLE BASE
TERMINAL TYPE AND QUANTITY: 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE

SC5961-0012-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961001702520

NSN

5961-00-170-2520

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SC5961-0012-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961001702520

NSN

5961-00-170-2520

MFG

DRS ICAS, LLC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MIXER
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.240 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.732 INCHES MINIMUM AND 0.732 INCHES MINIMUM AND 0.766 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: EACH DIODE HAS A REMOVABLE BASE
TERMINAL TYPE AND QUANTITY: 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE

1902-0685

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

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1902-0685

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

MFG

HEWLETT PACKARD CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

DT71208A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

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DT71208A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

MFG

SIEMENS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ12169

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

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SZ12169

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001703835

NSN

5961-00-170-3835

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

54-1100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704063

NSN

5961-00-170-4063

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54-1100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704063

NSN

5961-00-170-4063

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.156 INCHES MAXIMUM
OVERALL LENGTH: 2.313 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 KNIFE BLADE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK

630-68686

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704063

NSN

5961-00-170-4063

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630-68686

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704063

NSN

5961-00-170-4063

MFG

APPLIED POWER INC POWER PACKER

Description

CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.156 INCHES MAXIMUM
OVERALL LENGTH: 2.313 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 KNIFE BLADE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK

0S024382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

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0S024382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1BTYPE1N43
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NONDEFINITIVE SPEC/STD DATA: 1N43 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

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1N43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1BTYPE1N43
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NONDEFINITIVE SPEC/STD DATA: 1N43 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

5M5530-990-26

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

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5M5530-990-26

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1BTYPE1N43
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NONDEFINITIVE SPEC/STD DATA: 1N43 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

824255C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

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824255C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704096

NSN

5961-00-170-4096

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1BTYPE1N43
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NONDEFINITIVE SPEC/STD DATA: 1N43 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

019001918

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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019001918

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

025-095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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025-095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

GENERAL INSTRUMENT CORPORATION DBA MOTOROLA DIV CONNECTED HOME SOLUTION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

074-20017-004A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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074-20017-004A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

LH ENTERPRISE

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

1-021-0120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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1-021-0120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

DOTRONIX INC BOULDER OPN

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

16T51734-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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16T51734-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

DEPARTMENT OF THE NAVY

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N34

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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1N34

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N34A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

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1N34A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001704430

NSN

5961-00-170-4430

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK