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5961-00-223-9828
20 Products
16601880-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002239828
NSN
5961-00-223-9828
16601880-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002239828
NSN
5961-00-223-9828
MFG
SYPRIS ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FZ7443
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230026
NSN
5961-00-223-0026
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.56 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ10939-132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230026
NSN
5961-00-223-0026
SZ10939-132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230026
NSN
5961-00-223-0026
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.56 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
932039-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002230087
NSN
5961-00-223-0087
932039-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002230087
NSN
5961-00-223-0087
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR PNP
TERMINAL LENGTH: 0.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -60.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC AND -5.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SS8257
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002230087
NSN
5961-00-223-0087
SS8257
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002230087
NSN
5961-00-223-0087
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR PNP
TERMINAL LENGTH: 0.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -60.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC AND -5.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC ALL TRANSISTOR
Related Searches:
MBD5500A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230543
NSN
5961-00-223-0543
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MBR4020F
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
OVERALL DIAMETER: 0.610 INCHES NOMINAL
OVERALL HEIGHT: 0.280 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
300UR15A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230944
NSN
5961-00-223-0944
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
MANUFACTURERS CODE: 30003
MFR SOURCE CONTROLLING REFERENCE: 62A85C419
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
62A85C419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002230944
NSN
5961-00-223-0944
MFG
NAVAL AIR SYSTEMS COMMAND
Description
MANUFACTURERS CODE: 30003
MFR SOURCE CONTROLLING REFERENCE: 62A85C419
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
000-8004-657
TRANSISTOR
NSN, MFG P/N
5961002231862
NSN
5961-00-223-1862
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 15.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UHF/MICROWAVE PNP BJT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 2.800 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 3.500 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 15.0 MAXIMUM
Related Searches:
MM4049
TRANSISTOR
NSN, MFG P/N
5961002231862
NSN
5961-00-223-1862
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 15.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UHF/MICROWAVE PNP BJT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 2.800 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 3.500 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 15.0 MAXIMUM
Related Searches:
Q0303
TRANSISTOR
NSN, MFG P/N
5961002231862
NSN
5961-00-223-1862
MFG
BEI SENSORS & SYSTEMS COMPANY INC. DBA SYSTRON DONNER INERTIAL DIV SYSTRON DONNER INERTIAL DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 15.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UHF/MICROWAVE PNP BJT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 2.800 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 3.500 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 15.0 MAXIMUM
Related Searches:
048817-0002
TRANSISTOR
NSN, MFG P/N
5961002232227
NSN
5961-00-223-2227
MFG
THALES ATM INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL HEIGHT: 0.710 INCHES NOMINAL
OVERALL LENGTH: 1.055 INCHES NOMINAL
OVERALL WIDTH: 1.055 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N5636
TRANSISTOR
NSN, MFG P/N
5961002232227
NSN
5961-00-223-2227
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL HEIGHT: 0.710 INCHES NOMINAL
OVERALL LENGTH: 1.055 INCHES NOMINAL
OVERALL WIDTH: 1.055 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
AL4514436
TRANSISTOR
NSN, MFG P/N
5961002232227
NSN
5961-00-223-2227
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL HEIGHT: 0.710 INCHES NOMINAL
OVERALL LENGTH: 1.055 INCHES NOMINAL
OVERALL WIDTH: 1.055 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
RELEASE 5918
TRANSISTOR
NSN, MFG P/N
5961002232227
NSN
5961-00-223-2227
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL HEIGHT: 0.710 INCHES NOMINAL
OVERALL LENGTH: 1.055 INCHES NOMINAL
OVERALL WIDTH: 1.055 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
246128-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002232230
NSN
5961-00-223-2230
246128-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002232230
NSN
5961-00-223-2230
MFG
THALES ATM INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: MR1122R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
MR1122R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002232230
NSN
5961-00-223-2230
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: MR1122R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
2-6-1M1B402Z
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
2-6-1M1B402Z
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 67-8025
MANUFACTURERS CODE: 41869
MATERIAL: SILICON
MOUNTING METHOD: BOLT
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 21.500 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
SPECIAL FEATURES: FOUR MTG SLOTS 0.281 IN.W ON 2.250 IN.BY 20.500 IN.MTG CENTERS;ENVIRONMENTAL PROTECTION:FUNGUS;INCLOSURE FEATURE:PARTIALLY INCLOSED;STACK QTY:2
TERMINAL TYPE AND QUANTITY: 6 TERMINAL LUG
THE MANUFACTURERS DATA:
Related Searches:
353-0502-010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
353-0502-010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 67-8025
MANUFACTURERS CODE: 41869
MATERIAL: SILICON
MOUNTING METHOD: BOLT
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 21.500 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
SPECIAL FEATURES: FOUR MTG SLOTS 0.281 IN.W ON 2.250 IN.BY 20.500 IN.MTG CENTERS;ENVIRONMENTAL PROTECTION:FUNGUS;INCLOSURE FEATURE:PARTIALLY INCLOSED;STACK QTY:2
TERMINAL TYPE AND QUANTITY: 6 TERMINAL LUG
THE MANUFACTURERS DATA:
Related Searches:
67-8025
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
67-8025
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002239578
NSN
5961-00-223-9578
MFG
VR ELECTRONICS CO LTD /LTEE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 67-8025
MANUFACTURERS CODE: 41869
MATERIAL: SILICON
MOUNTING METHOD: BOLT
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 21.500 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
SPECIAL FEATURES: FOUR MTG SLOTS 0.281 IN.W ON 2.250 IN.BY 20.500 IN.MTG CENTERS;ENVIRONMENTAL PROTECTION:FUNGUS;INCLOSURE FEATURE:PARTIALLY INCLOSED;STACK QTY:2
TERMINAL TYPE AND QUANTITY: 6 TERMINAL LUG
THE MANUFACTURERS DATA:
