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5961-00-126-4708
20 Products
171-2033
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264708
NSN
5961-00-126-4708
171-2033
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264708
NSN
5961-00-126-4708
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.050 INCHES MAXIMUM
OVERALL LENGTH: 11.611 INCHES MAXIMUM
OVERALL WIDTH: 3.840 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
67-7872
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264708
NSN
5961-00-126-4708
67-7872
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264708
NSN
5961-00-126-4708
MFG
VR ELECTRONICS CO LTD /LTEE
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.050 INCHES MAXIMUM
OVERALL LENGTH: 11.611 INCHES MAXIMUM
OVERALL WIDTH: 3.840 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
171-2034
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
171-2034
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.050 INCHES MAXIMUM
OVERALL LENGTH: 6.355 INCHES MAXIMUM
OVERALL WIDTH: 3.850 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
67-7873
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
67-7873
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.050 INCHES MAXIMUM
OVERALL LENGTH: 6.355 INCHES MAXIMUM
OVERALL WIDTH: 3.850 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
PD2034
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
PD2034
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001264709
NSN
5961-00-126-4709
MFG
PD & E ELECTRONICS LLC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.050 INCHES MAXIMUM
OVERALL LENGTH: 6.355 INCHES MAXIMUM
OVERALL WIDTH: 3.850 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
40-1122
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001264710
NSN
5961-00-126-4710
40-1122
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001264710
NSN
5961-00-126-4710
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
DESIGN CONTROL REFERENCE: 40-1122
MANUFACTURERS CODE: 81483
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.000 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.310 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 TAB AND 2 TAB W/SCREW
THE MANUFACTURERS DATA:
Related Searches:
1901-0171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001265409
NSN
5961-00-126-5409
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
DESIGN CONTROL REFERENCE: 1901-0576
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AIRCRAFT, TOMCAT F-14; SUPPLY CLASS AOE; AIRCRAFT, VIKING S-3B; AIRCRAFT; HORNET F/A-18; STURGEON CLASS SSN (637); KILAUEA CLASS T-AE 26; USNS HENRY J. KAISER CLASS TAO; AIRCRAFT, HAWKEYE E-2C
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1901-0576
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001265409
NSN
5961-00-126-5409
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
DESIGN CONTROL REFERENCE: 1901-0576
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AIRCRAFT, TOMCAT F-14; SUPPLY CLASS AOE; AIRCRAFT, VIKING S-3B; AIRCRAFT; HORNET F/A-18; STURGEON CLASS SSN (637); KILAUEA CLASS T-AE 26; USNS HENRY J. KAISER CLASS TAO; AIRCRAFT, HAWKEYE E-2C
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2605599
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001265939
NSN
5961-00-126-5939
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
DESIGN CONTROL REFERENCE: 2605599
MANUFACTURERS CODE: 06424
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
M01118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001265939
NSN
5961-00-126-5939
MFG
SKYWORKS SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: 2605599
MANUFACTURERS CODE: 06424
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
2N3920
TRANSISTOR
NSN, MFG P/N
5961001266668
NSN
5961-00-126-6668
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPIN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
3N108
TRANSISTOR
NSN, MFG P/N
5961001266719
NSN
5961-00-126-6719
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4953 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM EM
Related Searches:
723025-39
TRANSISTOR
NSN, MFG P/N
5961001266719
NSN
5961-00-126-6719
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4953 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM EM
Related Searches:
10195571
TRANSISTOR
NSN, MFG P/N
5961001267230
NSN
5961-00-126-7230
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5129 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMU
Related Searches:
12050-0013
TRANSISTOR
NSN, MFG P/N
5961001267230
NSN
5961-00-126-7230
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5129 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMU
Related Searches:
2836170
TRANSISTOR
NSN, MFG P/N
5961001267230
NSN
5961-00-126-7230
MFG
LOCKHEED CORP LOCKHEED ELECTRONICS CO INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5129 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMU
Related Searches:
2N3971
TRANSISTOR
NSN, MFG P/N
5961001267230
NSN
5961-00-126-7230
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5129 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMU
Related Searches:
2N3971A
TRANSISTOR
NSN, MFG P/N
5961001267230
NSN
5961-00-126-7230
MFG
ADELCO ELEKTRONIK GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5129 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMU
Related Searches:
100069
TRANSISTOR
NSN, MFG P/N
5961001267279
NSN
5961-00-126-7279
MFG
SAGA ENGINEERING CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NS3001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001267456
NSN
5961-00-126-7456
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: NS3001
MANUFACTURERS CODE: 21845
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
