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5961-00-813-5980
20 Products
353-3604-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135980
NSN
5961-00-813-5980
353-3604-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135980
NSN
5961-00-813-5980
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
Related Searches:
2N4062
TRANSISTOR
NSN, MFG P/N
5961008135963
NSN
5961-00-813-5963
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5142 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4062A
TRANSISTOR
NSN, MFG P/N
5961008135963
NSN
5961-00-813-5963
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5142 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
DMS 81037B
TRANSISTOR
NSN, MFG P/N
5961008135963
NSN
5961-00-813-5963
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5142 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
352-0569-020
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008135970
NSN
5961-00-813-5970
352-0569-020
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008135970
NSN
5961-00-813-5970
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
S17030
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008135970
NSN
5961-00-813-5970
MFG
SENSOR SYSTEMS LLC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
TS4174
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008135970
NSN
5961-00-813-5970
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
353-3603-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135971
NSN
5961-00-813-5971
353-3603-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135971
NSN
5961-00-813-5971
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.058 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3603 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
M4X1856
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135971
NSN
5961-00-813-5971
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.058 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3603 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
MS50071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135971
NSN
5961-00-813-5971
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.058 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3603 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
353-6466-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
353-6466-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.792 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BLV25EEC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.792 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
D5308
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.792 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
GC10895
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.792 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MA-4768
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135978
NSN
5961-00-813-5978
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.792 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
353-6466-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
353-6466-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
MFG
ROCKWELL COLLINS INC. DIV COMMERCIAL SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.088 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
BLV23GEP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.088 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
D5309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.088 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
GC10894-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
GC10894-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.088 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
MA4767
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008135979
NSN
5961-00-813-5979
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.088 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
