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5961-00-125-1216
20 Products
1901-0317
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251216
NSN
5961-00-125-1216
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.510 INCHES NOMINAL
OVERALL LENGTH: 0.510 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MDA952-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001249047
NSN
5961-00-124-9047
MDA952-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001249047
NSN
5961-00-124-9047
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.645 INCHES MAXIMUM
OVERALL LENGTH: 1.812 INCHES NOMINAL
OVERALL WIDTH: 1.296 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
MPS6512
TRANSISTOR
NSN, MFG P/N
5961001249860
NSN
5961-00-124-9860
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.135 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4382
TRANSISTOR
NSN, MFG P/N
5961001249955
NSN
5961-00-124-9955
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5349 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JAN2N4382
TRANSISTOR
NSN, MFG P/N
5961001249955
NSN
5961-00-124-9955
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5349 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
48-29393A01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249977
NSN
5961-00-124-9977
48-29393A01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249977
NSN
5961-00-124-9977
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM
OVERALL LENGTH: 0.076 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
D5641
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249977
NSN
5961-00-124-9977
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM
OVERALL LENGTH: 0.076 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
941-020-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249978
NSN
5961-00-124-9978
941-020-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249978
NSN
5961-00-124-9978
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
DESIGN CONTROL REFERENCE: 941-020-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 95542
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
NX1N5197
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001249978
NSN
5961-00-124-9978
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 941-020-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 95542
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N709
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001250000
NSN
5961-00-125-0000
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 653-518-9009
MANUFACTURERS CODE: 99193
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
653-518-9009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001250000
NSN
5961-00-125-0000
653-518-9009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001250000
NSN
5961-00-125-0000
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV AEROSPACE - PHOENIX
Description
DESIGN CONTROL REFERENCE: 653-518-9009
MANUFACTURERS CODE: 99193
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SMC717686
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001250059
NSN
5961-00-125-0059
SMC717686
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001250059
NSN
5961-00-125-0059
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: AMPLIFIER,RADIO FREQUENCY OG-131A/MSC
MAJOR COMPONENTS: DIODE 4; TERMINAL BOARD 1
Related Searches:
MIS-19376
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001250283
NSN
5961-00-125-0283
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-19376
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
C231D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001250814
NSN
5961-00-125-0814
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.502 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
NTE5518
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001250814
NSN
5961-00-125-0814
NTE5518
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001250814
NSN
5961-00-125-0814
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.502 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
1801621
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251066
NSN
5961-00-125-1066
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
DESIGN CONTROL REFERENCE: A13D2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
A13D2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251066
NSN
5961-00-125-1066
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
DESIGN CONTROL REFERENCE: A13D2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
532884J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251204
NSN
5961-00-125-1204
MFG
BAE SYSTEMS OPERATIONS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UTR3305
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251204
NSN
5961-00-125-1204
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
VE774022-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251204
NSN
5961-00-125-1204
VE774022-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001251204
NSN
5961-00-125-1204
MFG
DEWEY ELECTRONICS CORP THE AVION ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
