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5961-00-027-5094

20 Products

1N740

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275094

NSN

5961-00-027-5094

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1N740

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275094

NSN

5961-00-027-5094

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N740 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N1325

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275156

NSN

5961-00-027-5156

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1N1325

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275156

NSN

5961-00-027-5156

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2013 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 87.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

1902-0052

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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1902-0052

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

5961000275176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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5961000275176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ730821B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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DZ730821B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

FZ7444

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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FZ7444

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

G29A26

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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G29A26

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

HEWLETT PACKARD CO

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ30016-135

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

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SZ30016-135

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275176

NSN

5961-00-027-5176

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 14.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637); WASP CLASS LHD; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; IWO JIMA CLASS LPH; LOS ANGELES CLASS SSN (688); OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N2806A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275202

NSN

5961-00-027-5202

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1N2806A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275202

NSN

5961-00-027-5202

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N1696

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275247

NSN

5961-00-027-5247

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1N1696

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000275247

NSN

5961-00-027-5247

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1696 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N1597

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

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1N1597

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.427 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2547 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

3Z22

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

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3Z22

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.427 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2547 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

TD345

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

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TD345

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278110

NSN

5961-00-027-8110

MFG

TELECTRO SYSTEMS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.427 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2547 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N2837R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278239

NSN

5961-00-027-8239

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1N2837R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278239

NSN

5961-00-027-8239

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2837R TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

50M91ZR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278239

NSN

5961-00-027-8239

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50M91ZR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278239

NSN

5961-00-027-8239

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2837R TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

12F20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278241

NSN

5961-00-027-8241

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12F20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278241

NSN

5961-00-027-8241

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

DESIGN CONTROL REFERENCE: 12F20
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

249683

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278241

NSN

5961-00-027-8241

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249683

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278241

NSN

5961-00-027-8241

MFG

HISPANO SUIZA GROUPE SAFRAN

Description

DESIGN CONTROL REFERENCE: 12F20
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

K1137

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278396

NSN

5961-00-027-8396

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K1137

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278396

NSN

5961-00-027-8396

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

DESIGN CONTROL REFERENCE: K1137
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 72699
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

K1136

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278397

NSN

5961-00-027-8397

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K1136

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278397

NSN

5961-00-027-8397

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

DESIGN CONTROL REFERENCE: K1136
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 72699
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

MA450HR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278815

NSN

5961-00-027-8815

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MA450HR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000278815

NSN

5961-00-027-8815

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.195 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM REVERSE VOLTAGE, PEAK