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5961-00-222-1541
20 Products
MR751A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002221541
NSN
5961-00-222-1541
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DRS102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002221541
NSN
5961-00-222-1541
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
G1751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002221541
NSN
5961-00-222-1541
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
GR836R1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002221541
NSN
5961-00-222-1541
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002221541
NSN
5961-00-222-1541
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
71-4936
TRANSISTOR
NSN, MFG P/N
5961002221754
NSN
5961-00-222-1754
MFG
DEPARTMENT OF DEFENSE PROJECT MANAGER-MOBILE ELECTRIC POWER
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SDT1061
TRANSISTOR
NSN, MFG P/N
5961002221754
NSN
5961-00-222-1754
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N4620
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002222514
NSN
5961-00-222-2514
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1900.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4620
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
619R732-70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002222514
NSN
5961-00-222-2514
619R732-70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002222514
NSN
5961-00-222-2514
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1900.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4620
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N4620
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002222514
NSN
5961-00-222-2514
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1900.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4620
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD35754
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223227
NSN
5961-00-222-3227
MFG
TELCOM SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
003366
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223713
NSN
5961-00-222-3713
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A2353
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223713
NSN
5961-00-222-3713
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HPA2353
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223713
NSN
5961-00-222-3713
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CS91-1007-210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223747
NSN
5961-00-222-3747
CS91-1007-210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223747
NSN
5961-00-222-3747
MFG
BAE SYSTEMS OPERATIONS LTD
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
P200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002223747
NSN
5961-00-222-3747
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
479-1076-014
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002224737
NSN
5961-00-222-4737
479-1076-014
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002224737
NSN
5961-00-222-4737
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: POINT CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 479-1076-014
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
Related Searches:
D5779-14
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002224737
NSN
5961-00-222-4737
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: POINT CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 479-1076-014
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
Related Searches:
MA41303GMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002224737
NSN
5961-00-222-4737
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: POINT CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 479-1076-014
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
Related Searches:
1-56
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002226082
NSN
5961-00-222-6082
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
