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5961-00-056-0893
20 Products
900556-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
900556-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1874A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-198
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM GATE VOLTAGE, DC AND 200.0 MAXIMU
Related Searches:
SU39H
TRANSISTOR
NSN, MFG P/N
5961000558007
NSN
5961-00-055-8007
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE 2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE AND 35.0 MAXIMUM INTERBASE VOLTAGE
Related Searches:
2N2012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000558524
NSN
5961-00-055-8524
2N2012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000558524
NSN
5961-00-055-8524
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4400 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
TCR2001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000558524
NSN
5961-00-055-8524
TCR2001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000558524
NSN
5961-00-055-8524
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4400 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
MN60SA220
TRANSISTOR
NSN, MFG P/N
5961000559025
NSN
5961-00-055-9025
MFG
STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: MN60SA220
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01537
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
XN12E
TRANSISTOR
NSN, MFG P/N
5961000559027
NSN
5961-00-055-9027
MFG
STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: XN12E
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01537
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 PIN OR 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
10049213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000559028
NSN
5961-00-055-9028
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3819 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N60A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000559028
NSN
5961-00-055-9028
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3819 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
NASAMSFC338-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000559549
NSN
5961-00-055-9549
NASAMSFC338-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000559549
NSN
5961-00-055-9549
MFG
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION SPECIFICATIONS PROMULGATED BY NATIONAL AERONAUTICS AND SPACE ADMINISTRATION WASHINGTON DC
Description
(NON-CORE DATA) NONDEFINITIVE SPEC/STD DATA: S1N747A TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: S1N747A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24062
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: NASAMSFC338-8
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N3343A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000559567
NSN
5961-00-055-9567
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3343A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N1804
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000559569
NSN
5961-00-055-9569
2N1804
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000559569
NSN
5961-00-055-9569
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE-4111B PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK GATE VOLTAGE AND 5.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE 4111B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000559569
NSN
5961-00-055-9569
RELEASE 4111B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000559569
NSN
5961-00-055-9569
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE-4111B PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM PEAK GATE VOLTAGE AND 5.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N2913
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000559576
NSN
5961-00-055-9576
2N2913
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000559576
NSN
5961-00-055-9576
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
2N1617A
TRANSISTOR
NSN, MFG P/N
5961000559625
NSN
5961-00-055-9625
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.648 INCHES NOMINAL
OVERALL LENGTH: 0.344 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.672 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, CO
Related Searches:
2N485
TRANSISTOR
NSN, MFG P/N
5961000559627
NSN
5961-00-055-9627
MFG
ELECTRONIC TRANSISTORS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
10244486
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
10244486
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: STEEL
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 1.244 INCHES MAXIMUM
OVERALL WIDTH: 0.725 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.147 INCHES NOMINAL ALL MOUNTING FACILITIES
Related Searches:
CP5077-12-61
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
CP5077-12-61
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: STEEL
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 1.244 INCHES MAXIMUM
OVERALL WIDTH: 0.725 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.147 INCHES NOMINAL ALL MOUNTING FACILITIES
Related Searches:
DF13C
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
MFG
INTERSIL CORPORATION
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: STEEL
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 1.244 INCHES MAXIMUM
OVERALL WIDTH: 0.725 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.147 INCHES NOMINAL ALL MOUNTING FACILITIES
Related Searches:
G237-033-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
G237-033-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000560860
NSN
5961-00-056-0860
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: STEEL
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 1.244 INCHES MAXIMUM
OVERALL WIDTH: 0.725 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
STYLE DESIGNATOR: 64B PLATE TYPE
SURFACE TREATMENT: NICKEL
UNTHREADED MOUNTING HOLE DIAMETER: 0.147 INCHES NOMINAL ALL MOUNTING FACILITIES
Related Searches:
2N1358M
TRANSISTOR
NSN, MFG P/N
5961000560889
NSN
5961-00-056-0889
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM EMITTER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N1358M
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/122
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITT
