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5961-01-362-5394
20 Products
V12954
TRANSISTOR
NSN, MFG P/N
5961013625394
NSN
5961-01-362-5394
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.610 INCHES MINIMUM
OVERALL LENGTH: 1.260 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 64547-4222029 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
8505086-443
TRANSISTOR
NSN, MFG P/N
5961013625395
NSN
5961-01-362-5395
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL DRAIN CURRENT AND 60.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.240 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 100.0 NOMINAL DRAIN TO GATE VOLTAGE
Related Searches:
94-7104
TRANSISTOR
NSN, MFG P/N
5961013625395
NSN
5961-01-362-5395
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL DRAIN CURRENT AND 60.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.240 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 100.0 NOMINAL DRAIN TO GATE VOLTAGE
Related Searches:
V11999
TRANSISTOR
NSN, MFG P/N
5961013625395
NSN
5961-01-362-5395
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL DRAIN CURRENT AND 60.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.240 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 100.0 NOMINAL DRAIN TO GATE VOLTAGE
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350G20F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625509
NSN
5961-01-362-5509
MFG
H V COMPONENT ASSOCIATES INC
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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MA490A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625510
NSN
5961-01-362-5510
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
MA-41201EMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013625511
NSN
5961-01-362-5511
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
OVERALL WIDTH: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.734 INCHES MINIMUM AND 0.766 INCHES MAXIMUM
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162990
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625584
NSN
5961-01-362-5584
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
163282
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625585
NSN
5961-01-362-5585
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
162977-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625586
NSN
5961-01-362-5586
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 0.18 NOMINAL
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 61742-162977 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
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MA4P917-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625586
NSN
5961-01-362-5586
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.18 NOMINAL
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 61742-162977 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
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89102-1N5819URTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625666
NSN
5961-01-362-5666
89102-1N5819URTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625666
NSN
5961-01-362-5666
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.189 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N5656
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625667
NSN
5961-01-362-5667
JANTX1N5656
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013625667
NSN
5961-01-362-5667
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5656
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 86.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 95.5 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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G371270-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626219
NSN
5961-01-362-6219
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
SPECIAL FEATURES: RESCREENING OF SCREENED DEVICE AND HCI PER R.CORONADO/SM-ALC/LHSCS/ DSN633-4960 OR 633-3850
Related Searches:
G494565-464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626219
NSN
5961-01-362-6219
G494565-464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626219
NSN
5961-01-362-6219
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
SPECIAL FEATURES: RESCREENING OF SCREENED DEVICE AND HCI PER R.CORONADO/SM-ALC/LHSCS/ DSN633-4960 OR 633-3850
Related Searches:
S-3456
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626219
NSN
5961-01-362-6219
MFG
SEMICON COMPONENTS INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
SPECIAL FEATURES: RESCREENING OF SCREENED DEVICE AND HCI PER R.CORONADO/SM-ALC/LHSCS/ DSN633-4960 OR 633-3850
Related Searches:
CDLL5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626319
NSN
5961-01-362-6319
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G504347-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626319
NSN
5961-01-362-6319
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
162986-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013626590
NSN
5961-01-362-6590
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
932590-0001
TRANSISTOR
NSN, MFG P/N
5961013626693
NSN
5961-01-362-6693
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 06481-932590 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
