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5961-01-318-9702
20 Products
250008
TRANSISTOR
NSN, MFG P/N
5961013189702
NSN
5961-01-318-9702
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.475 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
8856220-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188810
NSN
5961-01-318-8810
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM P/N JANTXV1N5532B; JANTX1N5532B; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856220 SPECIFICATION
Related Searches:
8856221-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188811
NSN
5961-01-318-8811
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM P/N JANTX1N967B; JANTXV1N967B; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856221 SPECIFICATION
Related Searches:
8856223-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188812
NSN
5961-01-318-8812
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM P/N JANTXV1N829; JANTX1N829; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856223 SPECIFICATION
Related Searches:
8856224-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188813
NSN
5961-01-318-8813
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM JANTX1N5809; JANTXV1N5809; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856224 SPECIFICATION
Related Searches:
G3FS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188815
NSN
5961-01-318-8815
MFG
H V COMPONENT ASSOCIATES INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
198007P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188816
NSN
5961-01-318-8816
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1N830-52
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188816
NSN
5961-01-318-8816
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
41660
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188816
NSN
5961-01-318-8816
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
0122-0213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188817
NSN
5961-01-318-8817
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
SMV315-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188817
NSN
5961-01-318-8817
SMV315-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013188817
NSN
5961-01-318-8817
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
SK3577/5408
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013188824
NSN
5961-01-318-8824
SK3577/5408
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013188824
NSN
5961-01-318-8824
MFG
THOMSON-CSF COMPONENTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.366 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.985 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
851-31623-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013188984
NSN
5961-01-318-8984
851-31623-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013188984
NSN
5961-01-318-8984
MFG
KATO ENGINEERING INC.
Description
SPECIAL FEATURES: 600.0 V; 15.0 AMP; BRIDGE RECTIFIER
Related Searches:
8856218-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189265
NSN
5961-01-318-9265
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM P/N JANTXV1N4150-1; JANTX1N4150-1; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856220 SPECIFICATION
Related Searches:
8856219-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189266
NSN
5961-01-318-9266
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM P/N JANTX1N5525B; JANTXV1N5525B; FSCM 81349; HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 63812-8856219 SPECIFICATION
Related Searches:
6N498PC10
TRANSISTOR
NSN, MFG P/N
5961013189405
NSN
5961-01-318-9405
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KFR165A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
KFR165A
TRANSISTOR
NSN, MFG P/N
5961013189405
NSN
5961-01-318-9405
MFG
EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KFR165A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
AQ-EBR-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189490
NSN
5961-01-318-9490
AQ-EBR-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189490
NSN
5961-01-318-9490
MFG
INSTITUTE OF MANAGEMENT INSTRUCTION INC DBA INTL MANAGEMENT INSTITUTE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DIODE 300V 80A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189490
NSN
5961-01-318-9490
DIODE 300V 80A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013189490
NSN
5961-01-318-9490
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BC214
TRANSISTOR
NSN, MFG P/N
5961013189702
NSN
5961-01-318-9702
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.475 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
