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5961-01-249-7187

20 Products

SDHC5KM-P

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497187

NSN

5961-01-249-7187

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SDHC5KM-P

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497187

NSN

5961-01-249-7187

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB

HVSC5KM-P

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497187

NSN

5961-01-249-7187

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HVSC5KM-P

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497187

NSN

5961-01-249-7187

MFG

H V COMPONENT ASSOCIATES INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB

171-2278

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497188

NSN

5961-01-249-7188

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171-2278

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497188

NSN

5961-01-249-7188

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.780 INCHES NOMINAL
OVERALL LENGTH: 1.900 INCHES NOMINAL

S9HVM2.5

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497188

NSN

5961-01-249-7188

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S9HVM2.5

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012497188

NSN

5961-01-249-7188

MFG

SEMTECH CORPORATION

Description

OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.780 INCHES NOMINAL
OVERALL LENGTH: 1.900 INCHES NOMINAL

239-014-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497317

NSN

5961-01-249-7317

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239-014-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497317

NSN

5961-01-249-7317

MFG

TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB

Description

DESIGN CONTROL REFERENCE: 239-014-000
III END ITEM IDENTIFICATION: 6515-00-000-0069
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: MARKED W/NUMBER 4148
THE MANUFACTURERS DATA:

P16201-3

TRANSISTOR

NSN, MFG P/N

5961012497404

NSN

5961-01-249-7404

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P16201-3

TRANSISTOR

NSN, MFG P/N

5961012497404

NSN

5961-01-249-7404

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

P16237-1

TRANSISTOR

NSN, MFG P/N

5961012497406

NSN

5961-01-249-7406

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P16237-1

TRANSISTOR

NSN, MFG P/N

5961012497406

NSN

5961-01-249-7406

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

301U100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

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301U100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

G161266

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

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G161266

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

G161266-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

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G161266-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

MFG

RAYTHEON COMPANY DBA RAYTHEON

R600121JXXYK00BS14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

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R600121JXXYK00BS14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497407

NSN

5961-01-249-7407

MFG

POWEREX INC

70-HFR100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497408

NSN

5961-01-249-7408

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70-HFR100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497408

NSN

5961-01-249-7408

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.600 OUNCES
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 KILOWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

70HFR100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497408

NSN

5961-01-249-7408

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70HFR100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012497408

NSN

5961-01-249-7408

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.600 OUNCES
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 KILOWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

104X170BB002

TRANSISTOR

NSN, MFG P/N

5961012497586

NSN

5961-01-249-7586

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104X170BB002

TRANSISTOR

NSN, MFG P/N

5961012497586

NSN

5961-01-249-7586

MFG

GENERAL ELECTRIC CO SPEED VARIATOR PRODUCTS OPERATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 2.8 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE

U1898-18

TRANSISTOR

NSN, MFG P/N

5961012497586

NSN

5961-01-249-7586

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U1898-18

TRANSISTOR

NSN, MFG P/N

5961012497586

NSN

5961-01-249-7586

MFG

TELCOM SEMICONDUCTOR INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 2.8 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE

2N6051

TRANSISTOR

NSN, MFG P/N

5961012497587

NSN

5961-01-249-7587

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2N6051

TRANSISTOR

NSN, MFG P/N

5961012497587

NSN

5961-01-249-7587

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1730-01-144-1897 N POWER UNIT AIRC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 750.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

P16124-1

TRANSISTOR

NSN, MFG P/N

5961012497587

NSN

5961-01-249-7587

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P16124-1

TRANSISTOR

NSN, MFG P/N

5961012497587

NSN

5961-01-249-7587

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1730-01-144-1897 N POWER UNIT AIRC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 750.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

IRF423

TRANSISTOR

NSN, MFG P/N

5961012497588

NSN

5961-01-249-7588

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IRF423

TRANSISTOR

NSN, MFG P/N

5961012497588

NSN

5961-01-249-7588

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

IRFF123

TRANSISTOR

NSN, MFG P/N

5961012497589

NSN

5961-01-249-7589

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IRFF123

TRANSISTOR

NSN, MFG P/N

5961012497589

NSN

5961-01-249-7589

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

11986101

TRANSISTOR

NSN, MFG P/N

5961012497590

NSN

5961-01-249-7590

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11986101

TRANSISTOR

NSN, MFG P/N

5961012497590

NSN

5961-01-249-7590

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE