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5961-01-249-7187
20 Products
SDHC5KM-P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497187
NSN
5961-01-249-7187
SDHC5KM-P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497187
NSN
5961-01-249-7187
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB
Related Searches:
HVSC5KM-P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497187
NSN
5961-01-249-7187
HVSC5KM-P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497187
NSN
5961-01-249-7187
MFG
H V COMPONENT ASSOCIATES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB
Related Searches:
171-2278
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497188
NSN
5961-01-249-7188
171-2278
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497188
NSN
5961-01-249-7188
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.780 INCHES NOMINAL
OVERALL LENGTH: 1.900 INCHES NOMINAL
Related Searches:
S9HVM2.5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497188
NSN
5961-01-249-7188
S9HVM2.5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012497188
NSN
5961-01-249-7188
MFG
SEMTECH CORPORATION
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.780 INCHES NOMINAL
OVERALL LENGTH: 1.900 INCHES NOMINAL
Related Searches:
239-014-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497317
NSN
5961-01-249-7317
239-014-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497317
NSN
5961-01-249-7317
MFG
TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB
Description
DESIGN CONTROL REFERENCE: 239-014-000
III END ITEM IDENTIFICATION: 6515-00-000-0069
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: MARKED W/NUMBER 4148
THE MANUFACTURERS DATA:
Related Searches:
P16201-3
TRANSISTOR
NSN, MFG P/N
5961012497404
NSN
5961-01-249-7404
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
P16237-1
TRANSISTOR
NSN, MFG P/N
5961012497406
NSN
5961-01-249-7406
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
301U100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497407
NSN
5961-01-249-7407
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G161266
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497407
NSN
5961-01-249-7407
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G161266-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497407
NSN
5961-01-249-7407
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R600121JXXYK00BS14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497407
NSN
5961-01-249-7407
R600121JXXYK00BS14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497407
NSN
5961-01-249-7407
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70-HFR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497408
NSN
5961-01-249-7408
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.600 OUNCES
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 KILOWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
70HFR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497408
NSN
5961-01-249-7408
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.600 OUNCES
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 KILOWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
104X170BB002
TRANSISTOR
NSN, MFG P/N
5961012497586
NSN
5961-01-249-7586
MFG
GENERAL ELECTRIC CO SPEED VARIATOR PRODUCTS OPERATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 2.8 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
U1898-18
TRANSISTOR
NSN, MFG P/N
5961012497586
NSN
5961-01-249-7586
MFG
TELCOM SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 2.8 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
2N6051
TRANSISTOR
NSN, MFG P/N
5961012497587
NSN
5961-01-249-7587
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1730-01-144-1897 N POWER UNIT AIRC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 750.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
P16124-1
TRANSISTOR
NSN, MFG P/N
5961012497587
NSN
5961-01-249-7587
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1730-01-144-1897 N POWER UNIT AIRC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 750.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
IRF423
TRANSISTOR
NSN, MFG P/N
5961012497588
NSN
5961-01-249-7588
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRFF123
TRANSISTOR
NSN, MFG P/N
5961012497589
NSN
5961-01-249-7589
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
11986101
TRANSISTOR
NSN, MFG P/N
5961012497590
NSN
5961-01-249-7590
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
