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5961-01-364-7864
20 Products
JANTX1N3295R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647864
NSN
5961-01-364-7864
JANTX1N3295R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647864
NSN
5961-01-364-7864
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1600.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3295R
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
6022789-2(VTS)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647864
NSN
5961-01-364-7864
6022789-2(VTS)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647864
NSN
5961-01-364-7864
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1600.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3295R
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
12934462
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648045
NSN
5961-01-364-8045
12934462
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648045
NSN
5961-01-364-8045
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: 6920-01-085-8514 TARGET HOLDING MECHANISM,TANK GUNNERY
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
TERMINAL TYPE AND QUANTITY: 10 TAB, SOLDER LUG
Related Searches:
34590
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013648142
NSN
5961-01-364-8142
MFG
TRIO LABORATORIES INC
Description
OVERALL DEPTH: 8.880 INCHES NOMINAL
OVERALL WIDTH: 10.815 INCHES NOMINAL
SPECIAL FEATURES: ALUMINUM ALLOY,6063
Related Searches:
3131715G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648470
NSN
5961-01-364-8470
3131715G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648470
NSN
5961-01-364-8470
MFG
ITT CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 45.00 AMPERES FORWARD CURRENT, DC AND 60.00 MICROAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.18 FORWARD VOLTAGE, TOTAL RMS AND 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -25.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.320 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.325 INCHES MAXIMUM
OVERALL WIDTH: 0.600 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
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SA11289
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648470
NSN
5961-01-364-8470
SA11289
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648470
NSN
5961-01-364-8470
MFG
SEMTECH CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 45.00 AMPERES FORWARD CURRENT, DC AND 60.00 MICROAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.18 FORWARD VOLTAGE, TOTAL RMS AND 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -25.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.320 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.325 INCHES MAXIMUM
OVERALL WIDTH: 0.600 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
3131693G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648471
NSN
5961-01-364-8471
3131693G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648471
NSN
5961-01-364-8471
MFG
ITT CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES FORWARD CURRENT, AVERAGE AND 10.00 MICROAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 FORWARD VOLTAGE, TOTAL RMS AND 500.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.680 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: LEAD MATERIAL SILVER
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SA11151
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648471
NSN
5961-01-364-8471
SA11151
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013648471
NSN
5961-01-364-8471
MFG
SEMTECH CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES FORWARD CURRENT, AVERAGE AND 10.00 MICROAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 FORWARD VOLTAGE, TOTAL RMS AND 500.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.680 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: LEAD MATERIAL SILVER
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
1855-0454
TRANSISTOR
NSN, MFG P/N
5961013649318
NSN
5961-01-364-9318
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
IRF431
TRANSISTOR
NSN, MFG P/N
5961013649318
NSN
5961-01-364-9318
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
587R892H01
TRANSISTOR
NSN, MFG P/N
5961013649319
NSN
5961-01-364-9319
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -15.0 MINIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 20.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND -0.3 MINIMUM GATE TO SUBSTRATE VOLTAGE AND
~1: 25.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE
Related Searches:
DM1215
TRANSISTOR
NSN, MFG P/N
5961013649319
NSN
5961-01-364-9319
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -15.0 MINIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 20.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND -0.3 MINIMUM GATE TO SUBSTRATE VOLTAGE AND
~1: 25.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE
Related Searches:
587R892H02
TRANSISTOR
NSN, MFG P/N
5961013649320
NSN
5961-01-364-9320
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.101 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MINIMUM
OVERALL WIDTH: 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -15.0 MINIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 20.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND -0.3 MINIMUM GATE TO SUBSTRATE VOLTAGE AND
~1: 25.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE
Related Searches:
SG4254
TRANSISTOR
NSN, MFG P/N
5961013649320
NSN
5961-01-364-9320
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.101 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MINIMUM
OVERALL WIDTH: 0.390 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -15.0 MINIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 20.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND -0.3 MINIMUM GATE TO SUBSTRATE VOLTAGE AND
~1: 25.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE
Related Searches:
019161
TRANSISTOR
NSN, MFG P/N
5961013649545
NSN
5961-01-364-9545
MFG
CONTROLLED POWER COMPANY
Description
DESIGN CONTROL REFERENCE: 019161
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 58287
THE MANUFACTURERS DATA:
Related Searches:
103915
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013649546
NSN
5961-01-364-9546
MFG
CONTROLLED POWER COMPANY
Description
DESIGN CONTROL REFERENCE: 103915
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 58287
THE MANUFACTURERS DATA:
Related Searches:
017690
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013649547
NSN
5961-01-364-9547
MFG
CONTROLLED POWER COMPANY
Description
DESIGN CONTROL REFERENCE: 107690
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 58287
THE MANUFACTURERS DATA:
Related Searches:
103048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013649548
NSN
5961-01-364-9548
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
DESIGN CONTROL REFERENCE: 103048
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 08125
THE MANUFACTURERS DATA:
Related Searches:
019684
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013649549
NSN
5961-01-364-9549
MFG
CONTROLLED POWER COMPANY
Description
DESIGN CONTROL REFERENCE: 019684
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 58287
THE MANUFACTURERS DATA:
Related Searches:
019884
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013649550
NSN
5961-01-364-9550
MFG
CONTROLLED POWER COMPANY
Description
DESIGN CONTROL REFERENCE: 019884
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 58287
THE MANUFACTURERS DATA:
