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5961-01-139-0688
20 Products
FBN-L191
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390688
NSN
5961-01-139-0688
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N4492
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4492
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
Related Searches:
RELEASE5566
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
RELEASE5566
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4492
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
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4820-6339
TRANSISTOR
NSN, MFG P/N
5961011390332
NSN
5961-01-139-0332
MFG
XKD CORP DBA DISPLAY SOLUTIONS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6341
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/509
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.328 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/509 GOVERNMENT
Related Searches:
JAN2N6341
TRANSISTOR
NSN, MFG P/N
5961011390332
NSN
5961-01-139-0332
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6341
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/509
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.328 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/509 GOVERNMENT
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011390511
NSN
5961-01-139-0511
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011390511
NSN
5961-01-139-0511
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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FBN-L208
TRANSISTOR
NSN, MFG P/N
5961011390671
NSN
5961-01-139-0671
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
FBN-L206
TRANSISTOR
NSN, MFG P/N
5961011390672
NSN
5961-01-139-0672
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
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FBN-L207
TRANSISTOR
NSN, MFG P/N
5961011390673
NSN
5961-01-139-0673
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
FBN-L183
TRANSISTOR
NSN, MFG P/N
5961011390674
NSN
5961-01-139-0674
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
0N271225-1
TRANSISTOR
NSN, MFG P/N
5961011390675
NSN
5961-01-139-0675
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N271226-1
TRANSISTOR
NSN, MFG P/N
5961011390676
NSN
5961-01-139-0676
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
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1N254
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390677
NSN
5961-01-139-0677
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1.50 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 190.0 MAXIMUM REVERSE VOLTAGE, PEAK
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6081-1013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390677
NSN
5961-01-139-0677
MFG
TECHNIPOWER LLC DBA INTEGRATED POWER SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1.50 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 190.0 MAXIMUM REVERSE VOLTAGE, PEAK
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FBL-00-162
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390681
NSN
5961-01-139-0681
FBL-00-162
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390681
NSN
5961-01-139-0681
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.177 INCHES MAXIMUM
OVERALL LENGTH: 0.189 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.182 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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FBL-00-164
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390682
NSN
5961-01-139-0682
FBL-00-164
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390682
NSN
5961-01-139-0682
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 625.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.079 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.025 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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FBM-Z169
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390683
NSN
5961-01-139-0683
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.079 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.984 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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FBL-00-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390684
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FBL-00-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390684
NSN
5961-01-139-0684
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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FBL-00-165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390685
NSN
5961-01-139-0685
FBL-00-165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390685
NSN
5961-01-139-0685
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.079 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.025 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FBL-00-133
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390687
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5961-01-139-0687
FBL-00-133
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390687
NSN
5961-01-139-0687
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
