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5961-01-069-2581

20 Products

1N6113

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010692581

NSN

5961-01-069-2581

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1N6113

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010692581

NSN

5961-01-069-2581

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6113
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTI

1N6057A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690379

NSN

5961-01-069-0379

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1N6057A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690379

NSN

5961-01-069-0379

MFG

GENERAL SEMICONDUCTOR INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6057A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIM

JANTXV1N6057A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690379

NSN

5961-01-069-0379

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JANTXV1N6057A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690379

NSN

5961-01-069-0379

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6057A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIM

0N167487

TRANSISTOR

NSN, MFG P/N

5961010690475

NSN

5961-01-069-0475

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0N167487

TRANSISTOR

NSN, MFG P/N

5961010690475

NSN

5961-01-069-0475

MFG

NATIONAL SECURITY AGENCY

0N167481

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690476

NSN

5961-01-069-0476

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0N167481

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010690476

NSN

5961-01-069-0476

MFG

NATIONAL SECURITY AGENCY

2SC926A

TRANSISTOR

NSN, MFG P/N

5961010690590

NSN

5961-01-069-0590

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2SC926A

TRANSISTOR

NSN, MFG P/N

5961010690590

NSN

5961-01-069-0590

MFG

SONY CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2SC926A
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: S0482
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.437 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

10676173

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010690690

NSN

5961-01-069-0690

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10676173

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010690690

NSN

5961-01-069-0690

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10676173
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.353 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1979819

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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1979819

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N155

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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1N155

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N99

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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1N99

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

8852522

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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8852522

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

PICATINNY ARSENAL

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

925999-1B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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925999-1B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

G1274

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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G1274

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

HA13242

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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HA13242

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

DOWTY RFL INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

HD2155

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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HD2155

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

JANTX1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

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JANTX1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010691140

NSN

5961-01-069-1140

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N277
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

138C083G01

HARDWARE KIT,ELECT

NSN, MFG P/N

5961010691443

NSN

5961-01-069-1443

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138C083G01

HARDWARE KIT,ELECT

NSN, MFG P/N

5961010691443

NSN

5961-01-069-1443

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 138C083G01
III END ITEM IDENTIFICATION: USED ON ARSR3 EQUIPMENT
MANUFACTURERS CODE: 97942
THE MANUFACTURERS DATA:

SM-A-697814-2

TRANSISTOR

NSN, MFG P/N

5961010691510

NSN

5961-01-069-1510

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SM-A-697814-2

TRANSISTOR

NSN, MFG P/N

5961010691510

NSN

5961-01-069-1510

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.730 INCHES NOMINAL
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH: 1.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

0N167493

TRANSISTOR

NSN, MFG P/N

5961010691625

NSN

5961-01-069-1625

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0N167493

TRANSISTOR

NSN, MFG P/N

5961010691625

NSN

5961-01-069-1625

MFG

NATIONAL SECURITY AGENCY

3N183

TRANSISTOR

NSN, MFG P/N

5961010691627

NSN

5961-01-069-1627

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3N183

TRANSISTOR

NSN, MFG P/N

5961010691627

NSN

5961-01-069-1627

MFG

GENERAL SEMICONDUCTOR INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD