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5961-01-479-3601
20 Products
SLC1074
TRANSISTOR
NSN, MFG P/N
5961014793601
NSN
5961-01-479-3601
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, AIRCRAFT
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
HCT1323
TRANSISTOR
NSN, MFG P/N
5961014793601
NSN
5961-01-479-3601
MFG
OPTEK TECHNOLOGY INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, AIRCRAFT
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
JANTX1N821UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793616
NSN
5961-01-479-3616
JANTX1N821UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793616
NSN
5961-01-479-3616
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N821UR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT DIODE; HERMATICALL SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; INTERNAL METALLURGICAL BOND
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N827UR-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793622
NSN
5961-01-479-3622
JANTX1N827UR-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793622
NSN
5961-01-479-3622
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N827UR-11
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 2.300 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: GLASS AXIAL-LEADED DIODE; HERMATICALLY SEALED GLASS CASING; TIN-LEAD PLATED AND SOLDERABLE TERMINALS; INTERNAL METTALURGICAL BOND
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
FK23006P1
TRANSISTOR
NSN, MFG P/N
5961014793629
NSN
5961-01-479-3629
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: F18 E/F AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, AIRCRAFT
Related Searches:
HCT1322
TRANSISTOR
NSN, MFG P/N
5961014793629
NSN
5961-01-479-3629
MFG
OPTEK TECHNOLOGY INC
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: F18 E/F AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, AIRCRAFT
Related Searches:
FK23045P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793641
NSN
5961-01-479-3641
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT-FIRST (F18 E/F)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE,-SILICON,TRANSIENT VOLTAGE SUPPRESSOR
OVERALL HEIGHT: 0.183 INCHES MINIMUM AND 0.202 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
OVERALL WIDTH: 0.183 INCHES MINIMUM AND 0.202 INCHES MAXIMUM
Related Searches:
SM2064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793641
NSN
5961-01-479-3641
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT-FIRST (F18 E/F)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE,-SILICON,TRANSIENT VOLTAGE SUPPRESSOR
OVERALL HEIGHT: 0.183 INCHES MINIMUM AND 0.202 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
OVERALL WIDTH: 0.183 INCHES MINIMUM AND 0.202 INCHES MAXIMUM
Related Searches:
JANTX1N4120UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793649
NSN
5961-01-479-3649
JANTX1N4120UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793649
NSN
5961-01-479-3649
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4120UR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT DIODE; HERMATICALL SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; INTERNAL METALLURGICAL BOND
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N756AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793651
NSN
5961-01-479-3651
JANTX1N756AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793651
NSN
5961-01-479-3651
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N756AUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT DIODE; HERMATICALL SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; INTERNALLY METALLURGICAL BONDING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N759AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793657
NSN
5961-01-479-3657
JANTX1N759AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793657
NSN
5961-01-479-3657
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N759AUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 2.175 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ZENER DIODE; HERMATICALL SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; METALLURGICAL BONDING; MULTI MOUNTING POSITIONS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
FK23111P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793821
NSN
5961-01-479-3821
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEV;(DRAWING)ZENER DIODE, TRANSIENT ABSORPTION(FK23111)
INCLOSURE MATERIAL: GLASS AND METAL
OVERALL LENGTH: 2.600 INCHES NOMINAL
OVERALL WIDTH: 0.235 INCHES MAXIMUM
SPECIAL FEATURES: OPERATING TEMPERATURE:-65 TO 175DEGREES CELSIUS;1500W OF PEAK PULSE POWER DISSIPATION;STAND-OFF VOLTAGE:45.0
Related Searches:
ICT-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014793821
NSN
5961-01-479-3821
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEV;(DRAWING)ZENER DIODE, TRANSIENT ABSORPTION(FK23111)
INCLOSURE MATERIAL: GLASS AND METAL
OVERALL LENGTH: 2.600 INCHES NOMINAL
OVERALL WIDTH: 0.235 INCHES MAXIMUM
SPECIAL FEATURES: OPERATING TEMPERATURE:-65 TO 175DEGREES CELSIUS;1500W OF PEAK PULSE POWER DISSIPATION;STAND-OFF VOLTAGE:45.0
Related Searches:
JANS1N4574AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014794182
NSN
5961-01-479-4182
JANS1N4574AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014794182
NSN
5961-01-479-4182
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N4574AUR-1
III END ITEM IDENTIFICATION: KG-207(CRYPTO)
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/452
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UNLEADED SURFACE MOUNT ROUND END CAP
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CSD3080H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014794663
NSN
5961-01-479-4663
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2006378-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014794869
NSN
5961-01-479-4869
2006378-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014794869
NSN
5961-01-479-4869
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: LYXX HELICOPTERS INFRARED COUNTERMEASURE AN/ALQ 157
SPECIAL FEATURES: MANUFACTURERS ITEM NAME: INFRARED COUNTERMEASURE AN/ALQ 157 RECTIFIER
Related Searches:
2010595
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014794870
NSN
5961-01-479-4870
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: JAPANESE ELECTRO-OPTICAL INFRARED COUNTERMEASURES AN/ALQ157 SYSTEM
SPECIAL FEATURES: MANUFACTURERS ITEM NAME: INFRARED COUNTER MEASURES AN/ALQ157 DIODE
Related Searches:
DD121S14K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014794870
NSN
5961-01-479-4870
MFG
GALCO INDUSTRIAL ELECTRONICS INC.
Description
III END ITEM IDENTIFICATION: JAPANESE ELECTRO-OPTICAL INFRARED COUNTERMEASURES AN/ALQ157 SYSTEM
SPECIAL FEATURES: MANUFACTURERS ITEM NAME: INFRARED COUNTER MEASURES AN/ALQ157 DIODE
Related Searches:
124-0592
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014795063
NSN
5961-01-479-5063
124-0592
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014795063
NSN
5961-01-479-5063
MFG
KEPCO INC.
Description
III END ITEM IDENTIFICATION: POWER,SUPPLY
Related Searches:
DSE12X30-06C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014795063
NSN
5961-01-479-5063
DSE12X30-06C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014795063
NSN
5961-01-479-5063
MFG
IXYS CORPORATION
Description
III END ITEM IDENTIFICATION: POWER,SUPPLY
