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5961-01-565-1783
20 Products
JANTXV1N4121-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651783
NSN
5961-01-565-1783
JANTXV1N4121-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651783
NSN
5961-01-565-1783
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4121-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N5289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651703
NSN
5961-01-565-1703
JANTX1N5289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651703
NSN
5961-01-565-1703
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.75 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5289-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTX1N5291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651712
NSN
5961-01-565-1712
JANTX1N5291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651712
NSN
5961-01-565-1712
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.56 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5291-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTX1N5293
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651715
NSN
5961-01-565-1715
JANTX1N5293
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651715
NSN
5961-01-565-1715
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.68 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5293-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTX1N5307-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651722
NSN
5961-01-565-1722
JANTX1N5307-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651722
NSN
5961-01-565-1722
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.40 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5307-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTXV1N4107-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651727
NSN
5961-01-565-1727
JANTXV1N4107-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651727
NSN
5961-01-565-1727
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 29.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4107-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 9.9 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTXV1N5283-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651731
NSN
5961-01-565-1731
JANTXV1N5283-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651731
NSN
5961-01-565-1731
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.22 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5283-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTXV1N5285-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651738
NSN
5961-01-565-1738
JANTXV1N5285-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651738
NSN
5961-01-565-1738
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.27 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5285-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTXV1N4108-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651739
NSN
5961-01-565-1739
JANTXV1N4108-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651739
NSN
5961-01-565-1739
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 27.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4108-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ429F251300A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651741
NSN
5961-01-565-1741
SZ429F251300A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651741
NSN
5961-01-565-1741
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: ATCBI6
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE, ZENER
Related Searches:
TF402F080000A
TRANSISTOR
NSN, MFG P/N
5961015651744
NSN
5961-01-565-1744
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: ATCBI6
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
Related Searches:
JANTXV1N4110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651752
NSN
5961-01-565-1752
JANTXV1N4110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651752
NSN
5961-01-565-1752
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4110-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651755
NSN
5961-01-565-1755
JANTX1N5307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651755
NSN
5961-01-565-1755
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.47 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5290-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTX1N5544B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651758
NSN
5961-01-565-1758
JANTX1N5544B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651758
NSN
5961-01-565-1758
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5544B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 2.150 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-STD-750 STANDARD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5544B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651758
NSN
5961-01-565-1758
JANTX1N5544B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651758
NSN
5961-01-565-1758
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5544B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 2.150 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-STD-750 STANDARD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5292
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651763
NSN
5961-01-565-1763
JANTX1N5292
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651763
NSN
5961-01-565-1763
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.62 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5292-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
1N5295
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651776
NSN
5961-01-565-1776
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.82 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5295-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JAN1N5295
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651776
NSN
5961-01-565-1776
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.82 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5295-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
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RELEASE5515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651776
NSN
5961-01-565-1776
RELEASE5515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651776
NSN
5961-01-565-1776
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.82 MILLIAMPERES NOMINAL REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5295-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
JANTXV1N4115-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651778
NSN
5961-01-565-1778
JANTXV1N4115-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015651778
NSN
5961-01-565-1778
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4115-1
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.670 INCHES MAXIMUM
OVERALL LENGTH: 0.146 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
