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5961-01-463-0830
20 Products
2SA1441K
TRANSISTOR
NSN, MFG P/N
5961014630830
NSN
5961-01-463-0830
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: -5.00 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS AND -2.50 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 25.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SES645
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629089
NSN
5961-01-462-9089
MFG
SEMITRONICS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
312A2889P1
TRANSISTOR
NSN, MFG P/N
5961014629505
NSN
5961-01-462-9505
MFG
BAE SYSTEMS CONTROLS INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: SAFCSE/IFSCM26512
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR AND -5.50 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.280 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
72574
TRANSISTOR
NSN, MFG P/N
5961014629505
NSN
5961-01-462-9505
MFG
HARRIS CORP FINDLAY OPNS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: SAFCSE/IFSCM26512
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR AND -5.50 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.280 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
MBD5057-T80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629585
NSN
5961-01-462-9585
MBD5057-T80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629585
NSN
5961-01-462-9585
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.997 INCHES MINIMUM AND 3.150 INCHES MAXIMUM
OVERALL LENGTH: 1.397 INCHES MINIMUM AND 1.651 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: SERIES RESISTANCE 6.5 OHMS
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.110 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
MBD2057-T80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629586
NSN
5961-01-462-9586
MBD2057-T80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629586
NSN
5961-01-462-9586
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MINIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.997 INCHES MINIMUM AND 3.150 INCHES MAXIMUM
OVERALL LENGTH: 1.397 INCHES MINIMUM AND 1.651 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: SERIES RESISTANCE 7.0 OHMS
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.410 MINIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
1SV164
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014629728
NSN
5961-01-462-9728
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MINIMUM AND 12.6 MAXIMUM
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BASE SUPPLY VOLTAGE AND 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
2SA952
TRANSISTOR
NSN, MFG P/N
5961014629758
NSN
5961-01-462-9758
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: -700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 4.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 18.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC2351
TRANSISTOR
NSN, MFG P/N
5961014629931
NSN
5961-01-462-9931
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 0.10 NANOAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN AND 200.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 40.00 MILLIAMPERES MINIMUM PEAK FORWARD SURGE
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: CURRENT
Related Searches:
2SC2954
TRANSISTOR
NSN, MFG P/N
5961014629941
NSN
5961-01-462-9941
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-89
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 4.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 18.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC3357
TRANSISTOR
NSN, MFG P/N
5961014629948
NSN
5961-01-462-9948
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 4.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC3735
TRANSISTOR
NSN, MFG P/N
5961014629959
NSN
5961-01-462-9959
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.9 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.8 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC3693
TRANSISTOR
NSN, MFG P/N
5961014629978
NSN
5961-01-462-9978
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 30.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
DSA135-12A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014630160
NSN
5961-01-463-0160
DSA135-12A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014630160
NSN
5961-01-463-0160
MFG
DLA LAND AND MARITIME
Description
DESIGN CONTROL REFERENCE: DSA135-12A
III END ITEM IDENTIFICATION: CYCLOCONVERTOR SUITE, PART NUMBER RP1/H18156 RP1/H181 ABOARD 420 FT WAGB COAST GUARD VESSELS
MANUFACTURERS CODE: 16236
THE MANUFACTURERS DATA:
Related Searches:
2SA1462
TRANSISTOR
NSN, MFG P/N
5961014630611
NSN
5961-01-463-0611
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND -100.00 NANOAMPERES MAXIMUM BASE CURRENT, DC AND -100.00 NANOAMPERES MAXIMUM PEAK PULSE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FN1L3Z
TRANSISTOR
NSN, MFG P/N
5961014630625
NSN
5961-01-463-0625
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND -200.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SB1115
TRANSISTOR
NSN, MFG P/N
5961014630632
NSN
5961-01-463-0632
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN AND -100.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.000 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FA1L3Z
TRANSISTOR
NSN, MFG P/N
5961014630640
NSN
5961-01-463-0640
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.9 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.8 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FA1A4M
TRANSISTOR
NSN, MFG P/N
5961014630818
NSN
5961-01-463-0818
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN AND 200.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 10.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC1775
TRANSISTOR
NSN, MFG P/N
5961014630827
NSN
5961-01-463-0827
MFG
HITACHI DENSHI LTD
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 5.200 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
