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5961-01-494-5679
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X349262G16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014945679
NSN
5961-01-494-5679
X349262G16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014945679
NSN
5961-01-494-5679
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: 5895-01-394-4324
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.400 INCHES MAXIMUM
OVERALL LENGTH: 6.000 INCHES MAXIMUM
OVERALL WIDTH: 5.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 TURRET AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7000.0 NOMINAL DC INPUT-TO-OUTPUT VOLTAGE, ISOLATION VOLTAGE
Related Searches:
4D98495
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014935311
NSN
5961-01-493-5311
MFG
CURTISS-WRIGHT ELECTRO-MECHANICAL CORPORATION DBA ELECTRO-MECHANICAL DIVISION DIV CURTISS-WRIGHT EMD
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD AND THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD QUANTITY PER INCH: 16 AND 18
THREAD SERIES DESIGNATOR: UNF AND UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 900.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1.3 MINIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 1.4 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
Related Searches:
PDD009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014935573
NSN
5961-01-493-5573
MFG
FCX SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT AND 20.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
III END ITEM IDENTIFICATION: POWER SUPPLY
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL LENGTH: 2.087 INCHES NOMINAL
OVERALL WIDTH: 1.417 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 960.0 MAXIMUM REVERSE VOLTAGE, DC AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1350.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N685STX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014938290
NSN
5961-01-493-8290
MFG
SEMITRONICS CORP
Description
SPECIAL FEATURES: MILITARY THYRISTOR/SCR
Related Searches:
91554866
TRANSISTOR
NSN, MFG P/N
5961014938326
NSN
5961-01-493-8326
MFG
THALES
Description
SPECIAL FEATURES: SILICON NPN HIGH POWER TRANSISTOR
Related Searches:
DTS701
TRANSISTOR
NSN, MFG P/N
5961014938326
NSN
5961-01-493-8326
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
SPECIAL FEATURES: SILICON NPN HIGH POWER TRANSISTOR
Related Searches:
S3BR30
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014938422
NSN
5961-01-493-8422
S3BR30
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014938422
NSN
5961-01-493-8422
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.150 INCHES NOMINAL
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 WIRE LEAD
Related Searches:
S3BR8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014938423
NSN
5961-01-493-8423
S3BR8
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014938423
NSN
5961-01-493-8423
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.150 INCHES NOMINAL
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 WIRE LEAD
Related Searches:
138478ITEM19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014938562
NSN
5961-01-493-8562
138478ITEM19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014938562
NSN
5961-01-493-8562
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6702
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX1N6702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014938562
NSN
5961-01-493-8562
JANTX1N6702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014938562
NSN
5961-01-493-8562
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6702
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
APT8075BN
TRANSISTOR
NSN, MFG P/N
5961014939159
NSN
5961-01-493-9159
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.031 INCHES MAXIMUM
TERMINAL LENGTH: 0.780 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
11445019
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014939945
NSN
5961-01-493-9945
11445019
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014939945
NSN
5961-01-493-9945
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MATERIAL: ALUMINUM ALLOY 6061
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 0.640 INCHES NOMINAL
SPECIAL FEATURES: BRACKET; CIRCUIT BOARD
STYLE DESIGNATOR: 90B RIGHT ANGLE, INSERTION MOUNTED
Related Searches:
006006388 ITEM 65
TRANSISTOR
NSN, MFG P/N
5961014940336
NSN
5961-01-494-0336
MFG
BAE SUBMARINE SOLUTIONS LIMITED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
2SJ76
TRANSISTOR
NSN, MFG P/N
5961014940336
NSN
5961-01-494-0336
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
92-9211-053
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014943841
NSN
5961-01-494-3841
92-9211-053
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014943841
NSN
5961-01-494-3841
MFG
PRIME TECHNOLOGY LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
MB64
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014943841
NSN
5961-01-494-3841
MB64
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014943841
NSN
5961-01-494-3841
MFG
MICROSEMI CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
702369PC75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014944262
NSN
5961-01-494-4262
702369PC75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014944262
NSN
5961-01-494-4262
MFG
SPD ELECTRICAL SYSTEMS INC
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 704079-C
MANUFACTURERS CODE: 30086
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
IRFAG40
TRANSISTOR
NSN, MFG P/N
5961014944401
NSN
5961-01-494-4401
MFG
ESPEY MFG & ELECTRONICS CORP . USE CAGE CODE 20950 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: VARIABLE BOOST TEST BOX, RAT 31SL, ESPEY MFG AND ELECTRONICS CORP
Related Searches:
141590PC39
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014945365
NSN
5961-01-494-5365
141590PC39
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014945365
NSN
5961-01-494-5365
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 142830
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
1366863
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014945679
NSN
5961-01-494-5679
1366863
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014945679
NSN
5961-01-494-5679
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV RAYTHEON TECHNICAL SERVICES COMPANY LLC
Description
III END ITEM IDENTIFICATION: 5895-01-394-4324
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.400 INCHES MAXIMUM
OVERALL LENGTH: 6.000 INCHES MAXIMUM
OVERALL WIDTH: 5.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 TURRET AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7000.0 NOMINAL DC INPUT-TO-OUTPUT VOLTAGE, ISOLATION VOLTAGE
