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5961-01-517-9910

20 Products

T8K7453503DHE14

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015179910

NSN

5961-01-517-9910

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T8K7453503DHE14

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015179910

NSN

5961-01-517-9910

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 550.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 350.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: RADAR;USED IN RAYTHEON ASSEMBLY136863-1
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHASE CONTROL SCR
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.280 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES MINIMUM AND 1.090 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 QUICK DISCONNECT, MALE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 4500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

013-00223-501

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175087

NSN

5961-01-517-5087

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013-00223-501

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175087

NSN

5961-01-517-5087

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

III END ITEM IDENTIFICATION: STATIC SWITCH MODULE 700-35231 FOR ACFC-135 STATE AIR COOLED FREQUENCY CONVERTER
SPECIAL FEATURES: SCR

750-35412-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175088

NSN

5961-01-517-5088

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750-35412-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175088

NSN

5961-01-517-5088

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

III END ITEM IDENTIFICATION: RECTIFIER MODULE 700-35221 FOR ACFC-135 STATE AIR COOLED FREQUENCY CONVERTER
SPECIAL FEATURES: SCR

700-35251

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175089

NSN

5961-01-517-5089

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700-35251

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015175089

NSN

5961-01-517-5089

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

III END ITEM IDENTIFICATION: RECTIFIER MODULE 700-35221 FOR ACFC-135 STATE AIR COOLED FREQUENCY CONVERTER
SPECIAL FEATURES: SCR

26MB160A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015175828

NSN

5961-01-517-5828

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26MB160A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015175828

NSN

5961-01-517-5828

MFG

NEWARK CORPORATION DBA NEWARK DIV NEWARK

Description

III END ITEM IDENTIFICATION: CONTROLLERS
SPECIAL FEATURES: 25A CURRENT RATING, 1.11V AT 40A VOLTAGE RATING

IXFM1766

TRANSISTOR

NSN, MFG P/N

5961015175898

NSN

5961-01-517-5898

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IXFM1766

TRANSISTOR

NSN, MFG P/N

5961015175898

NSN

5961-01-517-5898

MFG

IXYS CORPORATION

PMBT2222A

TRANSISTOR

NSN, MFG P/N

5961015175899

NSN

5961-01-517-5899

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PMBT2222A

TRANSISTOR

NSN, MFG P/N

5961015175899

NSN

5961-01-517-5899

MFG

PHILIPS CIRCUIT ASSEMBLIES

Description

III END ITEM IDENTIFICATION: RADAR TRANSMIT SET
III PART NAME ASSIGNED BY CONTROLLING AGENCY: REQUESTED NAME - TRANSISTOR, NPN SWIT

1N5242BRL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015176696

NSN

5961-01-517-6696

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1N5242BRL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015176696

NSN

5961-01-517-6696

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: REGULATOR DIODE
SPECIAL FEATURES: GENERAL PURPOSE REFERENCE/REGULATOR DIODE

11474945

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015177342

NSN

5961-01-517-7342

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11474945

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015177342

NSN

5961-01-517-7342

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
MOUNTING FACILITY QUANTITY: 5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
TERMINAL LENGTH: 0.220 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 5 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL COLLECTOR SUPPLY VOLTAGE

UTD-2004R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015177342

NSN

5961-01-517-7342

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UTD-2004R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015177342

NSN

5961-01-517-7342

MFG

AVNET MICROWAVE TECHNICAL SOLUTIONS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
MOUNTING FACILITY QUANTITY: 5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
TERMINAL LENGTH: 0.220 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 5 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL COLLECTOR SUPPLY VOLTAGE

1296H26PC27

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015177736

NSN

5961-01-517-7736

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1296H26PC27

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015177736

NSN

5961-01-517-7736

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: MFOD2404
MANUFACTURERS CODE: 04713
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

MFOD2404

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015177736

NSN

5961-01-517-7736

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MFOD2404

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015177736

NSN

5961-01-517-7736

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: MFOD2404
MANUFACTURERS CODE: 04713
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

11456368-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178289

NSN

5961-01-517-8289

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11456368-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178289

NSN

5961-01-517-8289

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 0.295 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
OVERALL LENGTH: 1.320 INCHES MINIMUM AND 1.370 INCHES MAXIMUM

DM920803C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178432

NSN

5961-01-517-8432

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DM920803C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178432

NSN

5961-01-517-8432

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

III END ITEM IDENTIFICATION: RADAR TRANSMIT SET
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SUPPRESSOR,TRANSIENT VOLTAGE,BIDIRECTIONAL

12993524

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

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12993524

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: AMBEINT TEMP -55 TO +150 DEGREE C; SEMI CONDUCTOR DEVICE, POWER MOSFET SINGLE DIE; HARDNESS CRITICAL ITEM

IXFN340N07

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

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IXFN340N07

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

MFG

IXYS CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: AMBEINT TEMP -55 TO +150 DEGREE C; SEMI CONDUCTOR DEVICE, POWER MOSFET SINGLE DIE; HARDNESS CRITICAL ITEM

NH12993524

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

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NH12993524

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178512

NSN

5961-01-517-8512

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: AMBEINT TEMP -55 TO +150 DEGREE C; SEMI CONDUCTOR DEVICE, POWER MOSFET SINGLE DIE; HARDNESS CRITICAL ITEM

JANTX1N6461US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178674

NSN

5961-01-517-8674

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JANTX1N6461US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015178674

NSN

5961-01-517-8674

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6461US
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MINIMUM REVERSE VOLTAGE, PEAK

25F80M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015179070

NSN

5961-01-517-9070

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25F80M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015179070

NSN

5961-01-517-9070

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

MRF275G

TRANSISTOR

NSN, MFG P/N

5961015179195

NSN

5961-01-517-9195

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MRF275G

TRANSISTOR

NSN, MFG P/N

5961015179195

NSN

5961-01-517-9195

MFG

M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION

Description

INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 1.330 INCHES MINIMUM AND 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON