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5961-01-548-0441
20 Products
JANTX1N4153UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015480441
NSN
5961-01-548-0441
JANTX1N4153UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015480441
NSN
5961-01-548-0441
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4153UR-1
III END ITEM IDENTIFICATION: PROX RELAY DR, CCA; MV-22 AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: SEMICONDUCTOR DEV
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
RFP10N15L
TRANSISTOR
NSN, MFG P/N
5961015468721
NSN
5961-01-546-8721
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
91776860
TRANSISTOR
NSN, MFG P/N
5961015469049
NSN
5961-01-546-9049
MFG
THALES
Description
TRANSISTOR
Related Searches:
NDS332P
TRANSISTOR
NSN, MFG P/N
5961015469049
NSN
5961-01-546-9049
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
90-236-X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015469258
NSN
5961-01-546-9258
MFG
HENSCHEL INC. DBA L-3 HENSCHEL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SP-BSN-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015469411
NSN
5961-01-546-9411
MFG
TELEGRID TECHNOLOGIES INC
Description
III END ITEM IDENTIFICATION: CENTRAL, COMMUNICATIONS NSN 5895-01-480-3972
Related Searches:
31322
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015473944
NSN
5961-01-547-3944
MFG
SURE POWER INC. DBA SURE POWER INDUSTRIES
Description
III END ITEM IDENTIFICATION: SHELTER EXPANDABLE
Related Searches:
IRFR120
TRANSISTOR
NSN, MFG P/N
5961015474539
NSN
5961-01-547-4539
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
III END ITEM IDENTIFICATION: 1430-01-433-8025 COMMAND LAUNCH UNIT, JAVELIN
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
Related Searches:
PZT2907AT1
TRANSISTOR
NSN, MFG P/N
5961015474542
NSN
5961-01-547-4542
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 1430-01-433-8025 COMMAND LAUNCH UNIT, JAVELIN
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
Related Searches:
57K4003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015475480
NSN
5961-01-547-5480
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III END ITEM IDENTIFICATION: 2340-01-511-7783, ASSAULT BREACHER VEHICLE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE
Related Searches:
UZ5116
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015476076
NSN
5961-01-547-6076
MFG
MICRO USPD INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR DIODE
OVERALL LENGTH: 2.300 INCHES NOMINAL
SPECIAL FEATURES: POWER DISSIPATION:5W, TOLERANCE:5%, ZENER VOLTAGE:160 V
Related Searches:
13312856-002
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015476619
NSN
5961-01-547-6619
13312856-002
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015476619
NSN
5961-01-547-6619
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS
Description
III END ITEM IDENTIFICATION: 1430-01-433-8025 COMMAND LAUNCH UNIT,JAVELIN
PART NAME ASSIGNED BY CONTROLLING AGENCY: RETAINER,SEMICOUNDUCTOR
Related Searches:
928062-501B
TRANSISTOR
NSN, MFG P/N
5961015476762
NSN
5961-01-547-6762
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
Related Searches:
A10554
TRANSISTOR
NSN, MFG P/N
5961015476762
NSN
5961-01-547-6762
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
Related Searches:
PP8430
TRANSISTOR
NSN, MFG P/N
5961015476762
NSN
5961-01-547-6762
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
Related Searches:
PT8966-3
TRANSISTOR
NSN, MFG P/N
5961015476762
NSN
5961-01-547-6762
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
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HP 5082-3202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015476929
NSN
5961-01-547-6929
HP 5082-3202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015476929
NSN
5961-01-547-6929
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
730824-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015478547
NSN
5961-01-547-8547
MFG
MARATHON ELECTRIC MANUFACTURING CORPORATION
Description
III END ITEM IDENTIFICATION: 6115-01-531-0571, GENERATOR SET, 20KW
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE, FWD POWER
Related Searches:
MQSPA25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015478699
NSN
5961-01-547-8699
MQSPA25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015478699
NSN
5961-01-547-8699
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MINIMUM AND 1.122 INCHES MAXIMUM
OVERALL LENGTH: 1.104 INCHES MINIMUM AND 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.104 INCHES MINIMUM AND 1.144 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
UF2840G
TRANSISTOR
NSN, MFG P/N
5961015480234
NSN
5961-01-548-0234
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL DRAIN CURRENT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.157 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.540 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
SPECIAL FEATURES: 40W, 28V; RF MOSFET; 100-500 MHZ; N-CHANNEL ENHANCEMENT MODE DEVICE; DMOS STRUCTURE; LOWER CAPACITANCES AND NOISE; HIGH SATURATED OUTPUT POWER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
