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5961-01-575-3149
20 Products
IRFR5305TRR
TRANSISTOR
NSN, MFG P/N
5961015753149
NSN
5961-01-575-3149
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 110.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MOSFET
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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BSS123LT1
TRANSISTOR
NSN, MFG P/N
5961015741952
NSN
5961-01-574-1952
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER MOSFET
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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BSS123LT1 BOITIER SOT 23
TRANSISTOR
NSN, MFG P/N
5961015741952
NSN
5961-01-574-1952
MFG
MOTOROLA INC CONTROL SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER MOSFET
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SM15T39A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015742847
NSN
5961-01-574-2847
MFG
STMICROELECTRONICS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIL
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.321 INCHES MAXIMUM
OVERALL WIDTH: 0.218 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.0 NOMINAL BREAKDOWN VOLTAGE, DC
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SM15T39A BOITIER SMC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015742847
NSN
5961-01-574-2847
SM15T39A BOITIER SMC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015742847
NSN
5961-01-574-2847
MFG
SGS-THOMSON MICROELECTRONICS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIL
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.321 INCHES MAXIMUM
OVERALL WIDTH: 0.218 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.0 NOMINAL BREAKDOWN VOLTAGE, DC
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7181225-00
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015744982
NSN
5961-01-574-4982
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATIONS SYSTEMS WEST DIV COMMUNICATION SYSTEMS WEST
Description
SEMICONDUCTOR DEVIC
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9232-00485-00
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015744983
NSN
5961-01-574-4983
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATIONS SYSTEMS WEST DIV COMMUNICATION SYSTEMS WEST
Description
SEMICONDUCTOR DEVIC
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85-02357-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015746067
NSN
5961-01-574-6067
85-02357-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015746067
NSN
5961-01-574-6067
MFG
LUMINESCENT SYSTEMS INC DBA LSI
Description
III END ITEM IDENTIFICATION: USED ON CESSNA 182T TURBO SKYLANE AIRCRAFT CONSOLE COVER
SPECIAL FEATURES: SINGLE LIGHT EMITTING DIODE ASSY
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12-60049-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015747422
NSN
5961-01-574-7422
12-60049-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015747422
NSN
5961-01-574-7422
MFG
CARRIER CORPORATION DIV CARRIER TRANSICOLD DIVISION
Description
III END ITEM IDENTIFICATION: 8145-01-534-3597 MULTI-TEMP REFR CONT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE ASSEMBLY
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1528630
SEMICONDUCTOR,TRANS
NSN, MFG P/N
5961015748553
NSN
5961-01-574-8553
MFG
NACCO MATERIALS HANDLING GROUP INC
Description
SEMICONDUCTOR,TRANS
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22901-1.5
SEMICONDUCTOR,TRANS
NSN, MFG P/N
5961015748553
NSN
5961-01-574-8553
MFG
COOPER BUSSMANN INC
Description
SEMICONDUCTOR,TRANS
Related Searches:
10-00319-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015749101
NSN
5961-01-574-9101
10-00319-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015749101
NSN
5961-01-574-9101
MFG
CARRIER CORPORATION DIV CARRIER TRANSICOLD DIVISION
Description
III END ITEM IDENTIFICATION: MULT-TEMP REFR CONT NSN 8145-01-534-3597
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE, BLOCK
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CC241250
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015749293
NSN
5961-01-574-9293
CC241250
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015749293
NSN
5961-01-574-9293
MFG
POWEREX INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR
III END ITEM IDENTIFICATION: SM27 SUB KIT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COMMON CATHODE DIODE MODULE, FAST RECOVERY
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 1.142 INCHES NOMINAL
OVERALL LENGTH: 2.106 INCHES NOMINAL
OVERALL WIDTH: 1.437 INCHES NOMINAL
SPECIAL FEATURES: ISOLATED MOUNTING; PLANAR CHIPS; FAST RECOVERY STYLE; STORAGE TEMP RANGE: M40 TO P125 DEG C; APPROX. WEIGHT: 90 GRAMS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR
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11481801
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
11481801
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 RADAR SET,SEMITRAILER MOUNTED
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICES
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MX1N5612
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 RADAR SET,SEMITRAILER MOUNTED
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICES
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SPD5612TX
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
SPD5612TX
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015749917
NSN
5961-01-574-9917
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 RADAR SET,SEMITRAILER MOUNTED
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICES
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CXRF 0/0-567-200040-10-258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015751516
NSN
5961-01-575-1516
CXRF 0/0-567-200040-10-258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015751516
NSN
5961-01-575-1516
MFG
ARGUS TECHNOLOGIES INC
Description
III END ITEM IDENTIFICATION: ADTO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER
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58549-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015751725
NSN
5961-01-575-1725
MFG
SAFE FLIGHT INSTRUMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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IRFP460PBF
TRANSISTOR
NSN, MFG P/N
5961015753147
NSN
5961-01-575-3147
MFG
VISHAY INTERTECHNOLOGY INC.
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 280.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MOSFET
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961015753148
NSN
5961-01-575-3148
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.10 AMPERES MINIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM DRAIN CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MOSFET
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
