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5961-01-400-1657
20 Products
94-7908
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NSN, MFG P/N
5961014001657
NSN
5961-01-400-1657
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
H8000091-001T
TRANSISTOR
NSN, MFG P/N
5961014001657
NSN
5961-01-400-1657
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
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SMC 50554
TRANSISTOR
NSN, MFG P/N
5961014001657
NSN
5961-01-400-1657
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
TRANSISTOR
Related Searches:
1855-0752
TRANSISTOR
NSN, MFG P/N
5961014001664
NSN
5961-01-400-1664
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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MMBF4392
TRANSISTOR
NSN, MFG P/N
5961014001664
NSN
5961-01-400-1664
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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600101-413-001
TRANSISTOR
NSN, MFG P/N
5961014001666
NSN
5961-01-400-1666
MFG
MACKAY COMMUNICATIONS INC DBA MACKAY MARINE
Description
TRANSISTOR
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600005-411-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001667
NSN
5961-01-400-1667
600005-411-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001667
NSN
5961-01-400-1667
MFG
MACKAY COMMUNICATIONS INC DBA MACKAY MARINE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
600002-411-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001668
NSN
5961-01-400-1668
600002-411-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001668
NSN
5961-01-400-1668
MFG
MACKAY COMMUNICATIONS INC DBA MACKAY MARINE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1901-0358
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014002309
NSN
5961-01-400-2309
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: USED ON 1133A TV/VIDEO SYNCH POD USED WITH AN OSCILLOSCOPE
Related Searches:
1N5814
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014002444
NSN
5961-01-400-2444
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5814
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-C-19500/478
OVERALL LENGTH: 1.022 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/478 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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689-4D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014002490
NSN
5961-01-400-2490
MFG
MICRO USPD INC
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM FORWARD VOLTAGE, PEAK
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82T365P002
TRANSISTOR
NSN, MFG P/N
5961014002601
NSN
5961-01-400-2601
MFG
SELEX SISTEMI INTEGRATI SPA
Description
III END ITEM IDENTIFICATION: TORNADO, EXTENDED DATA AQUISTITION UNIT, 276841A1, SELENIA INDUSTRIE ELETTRONICHE
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SDT3324
TRANSISTOR
NSN, MFG P/N
5961014002601
NSN
5961-01-400-2601
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: TORNADO, EXTENDED DATA AQUISTITION UNIT, 276841A1, SELENIA INDUSTRIE ELETTRONICHE
Related Searches:
H8000324-001F
TRANSISTOR
NSN, MFG P/N
5961014002889
NSN
5961-01-400-2889
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: RADAR SET AIR E/I FSCM 76301
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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SEN-1980
TRANSISTOR
NSN, MFG P/N
5961014002889
NSN
5961-01-400-2889
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: RADAR SET AIR E/I FSCM 76301
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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8513961-301
TRANSISTOR
NSN, MFG P/N
5961014003479
NSN
5961-01-400-3479
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
TRANSISTOR
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PK4515
TRANSISTOR
NSN, MFG P/N
5961014003479
NSN
5961-01-400-3479
MFG
SERTECH LABORATORIES INC
Description
TRANSISTOR
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PMF1017
TRANSISTOR
NSN, MFG P/N
5961014003479
NSN
5961-01-400-3479
MFG
OPTEK TECHNOLOGY INC
Description
TRANSISTOR
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SHQ7016H
TRANSISTOR
NSN, MFG P/N
5961014003479
NSN
5961-01-400-3479
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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VQ5032
TRANSISTOR
NSN, MFG P/N
5961014003479
NSN
5961-01-400-3479
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR