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5961-01-400-1657

20 Products

94-7908

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

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94-7908

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

H8000091-001T

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

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H8000091-001T

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

MFG

RAYTHEON COMPANY

SMC 50554

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

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SMC 50554

TRANSISTOR

NSN, MFG P/N

5961014001657

NSN

5961-01-400-1657

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

1855-0752

TRANSISTOR

NSN, MFG P/N

5961014001664

NSN

5961-01-400-1664

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1855-0752

TRANSISTOR

NSN, MFG P/N

5961014001664

NSN

5961-01-400-1664

MFG

HEWLETT PACKARD CO

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

MMBF4392

TRANSISTOR

NSN, MFG P/N

5961014001664

NSN

5961-01-400-1664

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MMBF4392

TRANSISTOR

NSN, MFG P/N

5961014001664

NSN

5961-01-400-1664

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

600101-413-001

TRANSISTOR

NSN, MFG P/N

5961014001666

NSN

5961-01-400-1666

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600101-413-001

TRANSISTOR

NSN, MFG P/N

5961014001666

NSN

5961-01-400-1666

MFG

MACKAY COMMUNICATIONS INC DBA MACKAY MARINE

600005-411-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001667

NSN

5961-01-400-1667

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600005-411-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001667

NSN

5961-01-400-1667

MFG

MACKAY COMMUNICATIONS INC DBA MACKAY MARINE

600002-411-007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001668

NSN

5961-01-400-1668

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600002-411-007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001668

NSN

5961-01-400-1668

MFG

MACKAY COMMUNICATIONS INC DBA MACKAY MARINE

1901-0358

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002309

NSN

5961-01-400-2309

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1901-0358

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002309

NSN

5961-01-400-2309

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

III END ITEM IDENTIFICATION: USED ON 1133A TV/VIDEO SYNCH POD USED WITH AN OSCILLOSCOPE

1N5814

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002444

NSN

5961-01-400-2444

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1N5814

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002444

NSN

5961-01-400-2444

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5814
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-C-19500/478
OVERALL LENGTH: 1.022 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/478 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

689-4D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002490

NSN

5961-01-400-2490

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689-4D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014002490

NSN

5961-01-400-2490

MFG

MICRO USPD INC

Description

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM FORWARD VOLTAGE, PEAK

82T365P002

TRANSISTOR

NSN, MFG P/N

5961014002601

NSN

5961-01-400-2601

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82T365P002

TRANSISTOR

NSN, MFG P/N

5961014002601

NSN

5961-01-400-2601

MFG

SELEX SISTEMI INTEGRATI SPA

Description

III END ITEM IDENTIFICATION: TORNADO, EXTENDED DATA AQUISTITION UNIT, 276841A1, SELENIA INDUSTRIE ELETTRONICHE

SDT3324

TRANSISTOR

NSN, MFG P/N

5961014002601

NSN

5961-01-400-2601

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SDT3324

TRANSISTOR

NSN, MFG P/N

5961014002601

NSN

5961-01-400-2601

MFG

SOLITRON DEVICES INC.

Description

III END ITEM IDENTIFICATION: TORNADO, EXTENDED DATA AQUISTITION UNIT, 276841A1, SELENIA INDUSTRIE ELETTRONICHE

H8000324-001F

TRANSISTOR

NSN, MFG P/N

5961014002889

NSN

5961-01-400-2889

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H8000324-001F

TRANSISTOR

NSN, MFG P/N

5961014002889

NSN

5961-01-400-2889

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: RADAR SET AIR E/I FSCM 76301
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

SEN-1980

TRANSISTOR

NSN, MFG P/N

5961014002889

NSN

5961-01-400-2889

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SEN-1980

TRANSISTOR

NSN, MFG P/N

5961014002889

NSN

5961-01-400-2889

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: RADAR SET AIR E/I FSCM 76301
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

8513961-301

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

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8513961-301

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

PK4515

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

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PK4515

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

MFG

SERTECH LABORATORIES INC

PMF1017

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

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PMF1017

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

MFG

OPTEK TECHNOLOGY INC

SHQ7016H

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

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SHQ7016H

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

MFG

FREESCALE SEMICONDUCTOR INC.

VQ5032

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

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VQ5032

TRANSISTOR

NSN, MFG P/N

5961014003479

NSN

5961-01-400-3479

MFG

SILICONIX INCORPORATED D IV SILICONIX