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5961-01-400-0888

20 Products

SEN-1840

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014000888

NSN

5961-01-400-0888

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SEN-1840

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014000888

NSN

5961-01-400-0888

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000318 DRAWING
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
III END ITEM IDENTIFICATION: RADAR SET AIR CAGE 76301
MATERIAL: SILICON
MOUNTING METHOD: SURFACE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD

D235A124-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001500

NSN

5961-01-400-1500

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D235A124-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001500

NSN

5961-01-400-1500

MFG

TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION

Description

INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.975 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

UTG4149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001500

NSN

5961-01-400-1500

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UTG4149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001500

NSN

5961-01-400-1500

MFG

MICRO USPD INC

Description

INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.975 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

171285-03

TRANSISTOR

NSN, MFG P/N

5961014001514

NSN

5961-01-400-1514

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171285-03

TRANSISTOR

NSN, MFG P/N

5961014001514

NSN

5961-01-400-1514

MFG

GE AVIATION SYSTEMS LLC

Description

DEPARTURE FROM CITED DESIGNATOR: MODIFIED LEADS BENT 3XR
INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.865 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REPETITIVE AVALANCHE FIELD EFFECT N-CHANNEL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

JANTX2N7225

TRANSISTOR

NSN, MFG P/N

5961014001514

NSN

5961-01-400-1514

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JANTX2N7225

TRANSISTOR

NSN, MFG P/N

5961014001514

NSN

5961-01-400-1514

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEPARTURE FROM CITED DESIGNATOR: MODIFIED LEADS BENT 3XR
INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.865 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REPETITIVE AVALANCHE FIELD EFFECT N-CHANNEL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

5267837-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001620

NSN

5961-01-400-1620

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5267837-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001620

NSN

5961-01-400-1620

MFG

NAVAL SEA SYSTEMS COMMAND

Description

FUNCTION FOR WHICH DESIGNED: AVALANCHE DIODE
III END ITEM IDENTIFICATION: MONITOR CONSOLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: 0LEADS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.030 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 260.0 MINIMUM REGULATOR VOLTAGE

MC510299

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001620

NSN

5961-01-400-1620

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MC510299

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014001620

NSN

5961-01-400-1620

MFG

MICROSEMI CORPORATION

Description

FUNCTION FOR WHICH DESIGNED: AVALANCHE DIODE
III END ITEM IDENTIFICATION: MONITOR CONSOLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: 0LEADS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.030 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 260.0 MINIMUM REGULATOR VOLTAGE

H8000317-001F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001647

NSN

5961-01-400-1647

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H8000317-001F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001647

NSN

5961-01-400-1647

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000317 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 4U884
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: H8000317-001F
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 1.660 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: PLATED BASE GOLD
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD

SEN-1841

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001647

NSN

5961-01-400-1647

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SEN-1841

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001647

NSN

5961-01-400-1647

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000317 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 4U884
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: H8000317-001F
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 1.660 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: PLATED BASE GOLD
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD

G2312HEX

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

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G2312HEX

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

H8000218-001T

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

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H8000218-001T

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

SMC50825

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

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SMC50825

TRANSISTOR

NSN, MFG P/N

5961014001648

NSN

5961-01-400-1648

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

H8000313-001T

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

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H8000313-001T

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

OM3420ST

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

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OM3420ST

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

SES729

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

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SES729

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

SMC51069

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

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SMC51069

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

X2N6396X

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

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X2N6396X

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014001651

NSN

5961-01-400-1651

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

95-0132

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

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95-0132

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

H8000087-001T

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

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H8000087-001T

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

MFG

RAYTHEON COMPANY

SMC50553

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

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SMC50553

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014001656

NSN

5961-01-400-1656

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION