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5961-01-400-0888
20 Products
SEN-1840
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014000888
NSN
5961-01-400-0888
SEN-1840
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014000888
NSN
5961-01-400-0888
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000318 DRAWING
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
III END ITEM IDENTIFICATION: RADAR SET AIR CAGE 76301
MATERIAL: SILICON
MOUNTING METHOD: SURFACE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
Related Searches:
D235A124-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001500
NSN
5961-01-400-1500
D235A124-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001500
NSN
5961-01-400-1500
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.975 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UTG4149
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001500
NSN
5961-01-400-1500
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.975 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
171285-03
TRANSISTOR
NSN, MFG P/N
5961014001514
NSN
5961-01-400-1514
MFG
GE AVIATION SYSTEMS LLC
Description
DEPARTURE FROM CITED DESIGNATOR: MODIFIED LEADS BENT 3XR
INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.865 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REPETITIVE AVALANCHE FIELD EFFECT N-CHANNEL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTX2N7225
TRANSISTOR
NSN, MFG P/N
5961014001514
NSN
5961-01-400-1514
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEPARTURE FROM CITED DESIGNATOR: MODIFIED LEADS BENT 3XR
INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.865 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REPETITIVE AVALANCHE FIELD EFFECT N-CHANNEL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
5267837-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001620
NSN
5961-01-400-1620
5267837-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001620
NSN
5961-01-400-1620
MFG
NAVAL SEA SYSTEMS COMMAND
Description
FUNCTION FOR WHICH DESIGNED: AVALANCHE DIODE
III END ITEM IDENTIFICATION: MONITOR CONSOLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: 0LEADS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.030 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 260.0 MINIMUM REGULATOR VOLTAGE
Related Searches:
MC510299
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014001620
NSN
5961-01-400-1620
MFG
MICROSEMI CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: AVALANCHE DIODE
III END ITEM IDENTIFICATION: MONITOR CONSOLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: 0LEADS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.030 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 260.0 MINIMUM REGULATOR VOLTAGE
Related Searches:
H8000317-001F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001647
NSN
5961-01-400-1647
H8000317-001F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001647
NSN
5961-01-400-1647
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000317 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 4U884
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: H8000317-001F
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 1.660 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: PLATED BASE GOLD
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
Related Searches:
SEN-1841
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001647
NSN
5961-01-400-1647
SEN-1841
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001647
NSN
5961-01-400-1647
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 82577-H8000317 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES REVERSE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 4U884
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: H8000317-001F
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 1.660 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: PLATED BASE GOLD
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
Related Searches:
G2312HEX
TRANSISTOR
NSN, MFG P/N
5961014001648
NSN
5961-01-400-1648
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
H8000218-001T
TRANSISTOR
NSN, MFG P/N
5961014001648
NSN
5961-01-400-1648
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SMC50825
TRANSISTOR
NSN, MFG P/N
5961014001648
NSN
5961-01-400-1648
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 43.20 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.80 AMPERES MAXIMUM DRAIN CURRENT AND 10.80 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 45.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000218 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
H8000313-001T
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
H8000313-001T
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
OM3420ST
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
OM3420ST
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
SES729
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
SES729
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
SMC51069
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
SMC51069
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
X2N6396X
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
X2N6396X
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014001651
NSN
5961-01-400-1651
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.08 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.89 MILLIMETERS MAXIMUM
OVERALL WIDTH: 16.38 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-H8000313 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
95-0132
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
95-0132
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
H8000087-001T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
H8000087-001T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
MFG
RAYTHEON COMPANY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SMC50553
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
SMC50553
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014001656
NSN
5961-01-400-1656
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
