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5961-01-079-5883

20 Products

07-1042

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010795883

NSN

5961-01-079-5883

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07-1042

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010795883

NSN

5961-01-079-5883

MFG

STANCIL CORPORATION

Description

DESIGN CONTROL REFERENCE: 07-1042
III END ITEM IDENTIFICATION: RECORDER-REPRODUCER SET,SOUND; AN/GSH-34
MANUFACTURERS CODE: 89178
THE MANUFACTURERS DATA:

7536424-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

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7536424-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: R2020/APR-38
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CHIP; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SCA14182-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

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SCA14182-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

MFG

SEMICOA DBA SEMICOA SEMI CONDUCTORS

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: R2020/APR-38
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CHIP; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SMCS1150-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

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SMCS1150-31

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: R2020/APR-38
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CHIP; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SSIT1190

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

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SSIT1190

TRANSISTOR

NSN, MFG P/N

5961010796108

NSN

5961-01-079-6108

MFG

SERTECH LABORATORIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: R2020/APR-38
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CHIP; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

920036-001

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

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920036-001

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

MFG

MOOG INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 920036-001
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL LENGTH: 0.526 INCHES MINIMUM AND 0.536 INCHES MAXIMUM
OVERALL WIDTH: 0.129 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.012 INCHES NOMINAL
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

ACSW4018-4004

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

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ACSW4018-4004

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

MFG

ADVANCED CONTROL COMPONENTS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 920036-001
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL LENGTH: 0.526 INCHES MINIMUM AND 0.536 INCHES MAXIMUM
OVERALL WIDTH: 0.129 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.012 INCHES NOMINAL
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

FS76816

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

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FS76816

TRANSISTOR

NSN, MFG P/N

5961010796110

NSN

5961-01-079-6110

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 920036-001
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL LENGTH: 0.526 INCHES MINIMUM AND 0.536 INCHES MAXIMUM
OVERALL WIDTH: 0.129 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.012 INCHES NOMINAL
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

950033-001

TRANSISTOR

NSN, MFG P/N

5961010796111

NSN

5961-01-079-6111

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950033-001

TRANSISTOR

NSN, MFG P/N

5961010796111

NSN

5961-01-079-6111

MFG

MOOG INC.

Description

DESIGN CONTROL REFERENCE: 950033-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

950032-001

TRANSISTOR

NSN, MFG P/N

5961010796112

NSN

5961-01-079-6112

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950032-001

TRANSISTOR

NSN, MFG P/N

5961010796112

NSN

5961-01-079-6112

MFG

MOOG INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 950032-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.355 INCHES NOMINAL
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 26.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

CD3028

TRANSISTOR

NSN, MFG P/N

5961010796112

NSN

5961-01-079-6112

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CD3028

TRANSISTOR

NSN, MFG P/N

5961010796112

NSN

5961-01-079-6112

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 950032-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.355 INCHES NOMINAL
OVERALL WIDTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 26.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

720033-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796113

NSN

5961-01-079-6113

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720033-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796113

NSN

5961-01-079-6113

MFG

ENGINEERED MAGNETICS INC DBA AAP DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SA6678
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.200 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC

SA6678

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796113

NSN

5961-01-079-6113

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SA6678

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796113

NSN

5961-01-079-6113

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SA6678
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.200 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC

004679

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796114

NSN

5961-01-079-6114

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004679

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796114

NSN

5961-01-079-6114

MFG

MOOG INC.

Description

DESIGN CONTROL REFERENCE: 950037-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

CND2059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796114

NSN

5961-01-079-6114

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CND2059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796114

NSN

5961-01-079-6114

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

DESIGN CONTROL REFERENCE: 950037-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

546-6664-002

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010796469

NSN

5961-01-079-6469

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546-6664-002

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010796469

NSN

5961-01-079-6469

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

MATERIAL: ALUMINUM ALLOY 2024
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-A-355-T4 ASSN STD SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.3125 INCHES NOMINAL
OVERALL LENGTH: 1.06250 INCHES NOMINAL
OVERALL WIDTH: 1.0000 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
SURFACE TREATMENT: CHROMATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: 580-0036-00 MFR REF SINGLE TREATMENT RESPONSE
UNTHREADED MOUNTING HOLE DIAMETER: 0.257 INCHES NOMINAL ALL MOUNTING FACILITIES

4290

ANALOG DIVIDER

NSN, MFG P/N

5961010796472

NSN

5961-01-079-6472

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4290

ANALOG DIVIDER

NSN, MFG P/N

5961010796472

NSN

5961-01-079-6472

MFG

BURR-BROWN CORP

2SC867A

TRANSISTOR

NSN, MFG P/N

5961010796536

NSN

5961-01-079-6536

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2SC867A

TRANSISTOR

NSN, MFG P/N

5961010796536

NSN

5961-01-079-6536

MFG

SONY CORPORATION

Description

INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.721 INCHES NOMINAL
OVERALL LENGTH: 1.214 INCHES NOMINAL
OVERALL WIDTH: 0.726 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE

11780034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796779

NSN

5961-01-079-6779

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11780034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796779

NSN

5961-01-079-6779

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

DESIGN CONTROL REFERENCE: SD2417
III END ITEM IDENTIFICATION: HEADSUP DISPLAY,COBRA HCPT
MANUFACTURERS CODE: 01281
THE MANUFACTURERS DATA:

PC70844-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796779

NSN

5961-01-079-6779

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PC70844-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010796779

NSN

5961-01-079-6779

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

DESIGN CONTROL REFERENCE: SD2417
III END ITEM IDENTIFICATION: HEADSUP DISPLAY,COBRA HCPT
MANUFACTURERS CODE: 01281
THE MANUFACTURERS DATA: