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5961-01-063-4537
20 Products
257540
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010634537
NSN
5961-01-063-4537
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
T235A148-1
TRANSISTOR
NSN, MFG P/N
5961010632494
NSN
5961-01-063-2494
MFG
INSTRUMENT SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 09966-T235A148 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO EMITTE
Related Searches:
209068P006
TRANSISTOR
NSN, MFG P/N
5961010632495
NSN
5961-01-063-2495
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94117-209068 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
DMS 80064B
TRANSISTOR
NSN, MFG P/N
5961010632495
NSN
5961-01-063-2495
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94117-209068 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
MEM660-012
TRANSISTOR
NSN, MFG P/N
5961010632495
NSN
5961-01-063-2495
MFG
GENERAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94117-209068 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
2N2905JTX2
TRANSISTOR
NSN, MFG P/N
5961010632497
NSN
5961-01-063-2497
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
152-0629-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010632498
NSN
5961-01-063-2498
152-0629-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010632498
NSN
5961-01-063-2498
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
PV120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010632498
NSN
5961-01-063-2498
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
48-82178A15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633077
NSN
5961-01-063-3077
48-82178A15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633077
NSN
5961-01-063-3077
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
DESIGN CONTROL REFERENCE: 48-82178A15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 50012
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4032685-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633078
NSN
5961-01-063-3078
4032685-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633078
NSN
5961-01-063-3078
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 4032685-0701
MANUFACTURERS CODE: 06845
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
GZ50909B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633078
NSN
5961-01-063-3078
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
DESIGN CONTROL REFERENCE: 4032685-0701
MANUFACTURERS CODE: 06845
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N4937
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633213
NSN
5961-01-063-3213
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1N4937
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 NSEC RECOVERY TIME; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
57110-0066-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633213
NSN
5961-01-063-3213
57110-0066-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633213
NSN
5961-01-063-3213
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1N4937
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 NSEC RECOVERY TIME; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
D22-0007-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633213
NSN
5961-01-063-3213
D22-0007-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010633213
NSN
5961-01-063-3213
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1N4937
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 NSEC RECOVERY TIME; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
50540122
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010633214
NSN
5961-01-063-3214
50540122
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010633214
NSN
5961-01-063-3214
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 50540122
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
723088-012
TRANSISTOR
NSN, MFG P/N
5961010634536
NSN
5961-01-063-4536
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
SS3361K
TRANSISTOR
NSN, MFG P/N
5961010634536
NSN
5961-01-063-4536
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
DJR2637
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010634537
NSN
5961-01-063-4537
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
FA3556U
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010634537
NSN
5961-01-063-4537
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
TP5726
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010634537
NSN
5961-01-063-4537
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
