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5961-00-175-9118
20 Products
29-16827-00
TRANSISTOR
NSN, MFG P/N
5961001759118
NSN
5961-00-175-9118
MFG
COMPAQ FEDERAL LLC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
Related Searches:
JAN1N4150A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758467
NSN
5961-00-175-8467
JAN1N4150A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758467
NSN
5961-00-175-8467
MFG
ADELCO ELEKTRONIK GMBH
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4150
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/231
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/231 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, DC
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S600 1005A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758467
NSN
5961-00-175-8467
S600 1005A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758467
NSN
5961-00-175-8467
MFG
THALES OPTRONICS BV
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4150
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/231
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/231 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
WG1377
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758467
NSN
5961-00-175-8467
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4150
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/231
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/231 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, DC
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003113-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758530
NSN
5961-00-175-8530
MFG
GOODRICH ACTUATION SYSTEMS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N3326A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758530
NSN
5961-00-175-8530
MFG
INTERNATIONAL RECTIFIER CO GB LTD
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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2N5444
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
2N5444
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6188 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N5444A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
2N5444A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6188 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
842-544-4X
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
842-544-4X
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001758595
NSN
5961-00-175-8595
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6188 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
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JANTX1N3996RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758706
NSN
5961-00-175-8706
JANTX1N3996RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001758706
NSN
5961-00-175-8706
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 490.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3996RA
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81
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BC262A
TRANSISTOR
NSN, MFG P/N
5961001758942
NSN
5961-00-175-8942
MFG
I T T BUSINESS SYSTEMS DATA SYSTEMS DIVISION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NT402808
TRANSISTOR
NSN, MFG P/N
5961001758942
NSN
5961-00-175-8942
MFG
RACAL ACOUSTICS LIMITED
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NT402269
TRANSISTOR
NSN, MFG P/N
5961001759005
NSN
5961-00-175-9005
MFG
RACAL ACOUSTICS LIMITED
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
ST8229
TRANSISTOR
NSN, MFG P/N
5961001759005
NSN
5961-00-175-9005
MFG
MEMEC LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
A7-07-0063-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759009
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A7-07-0063-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759009
NSN
5961-00-175-9009
MFG
RACAL ACOUSTICS LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A7-07-0063-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759010
NSN
5961-00-175-9010
A7-07-0063-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759010
NSN
5961-00-175-9010
MFG
RACAL ACOUSTICS LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A7-07-0063-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759075
NSN
5961-00-175-9075
A7-07-0063-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001759075
NSN
5961-00-175-9075
MFG
RACAL ACOUSTICS LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
394-3106-2
TRANSISTOR
NSN, MFG P/N
5961001759116
NSN
5961-00-175-9116
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 394-3106-2
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 11530
OVERALL DIAMETER: 0.196 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
394-3142-1
TRANSISTOR
NSN, MFG P/N
5961001759117
NSN
5961-00-175-9117
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 394-3142-1
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 11530
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
800018-001
TRANSISTOR
NSN, MFG P/N
5961001759118
NSN
5961-00-175-9118
MFG
DATA PRODUCTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
