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5961-01-443-3409
20 Products
8521850-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433409
NSN
5961-01-443-3409
8521850-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433409
NSN
5961-01-443-3409
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
III END ITEM IDENTIFICATION: 1260-01-432-8564
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
Related Searches:
SEN-2505
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433409
NSN
5961-01-443-3409
SEN-2505
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433409
NSN
5961-01-443-3409
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: 1260-01-432-8564
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
Related Searches:
8521850-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433411
NSN
5961-01-443-3411
8521850-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433411
NSN
5961-01-443-3411
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
III END ITEM IDENTIFICATION: 1260-01-432-8564
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
Related Searches:
SEN-2506
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433411
NSN
5961-01-443-3411
SEN-2506
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014433411
NSN
5961-01-443-3411
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: 1260-01-432-8564
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
Related Searches:
CBR25-040
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014433864
NSN
5961-01-443-3864
CBR25-040
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014433864
NSN
5961-01-443-3864
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
MOUNTING METHOD: BASE
OVERALL LENGTH: 1.115 INCHES MINIMUM AND 1.135 INCHES MAXIMUM
OVERALL WIDTH: 1.115 INCHES MINIMUM AND 1.135 INCHES MAXIMUM
Related Searches:
HVPF4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014433874
NSN
5961-01-443-3874
MFG
SAN ANTONIO AIR LOGISTICS CENTER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 REVERSE VOLTAGE, PEAK
MOUNTING METHOD: BASE
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
JANTX1N4568A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433879
NSN
5961-01-443-3879
JANTX1N4568A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433879
NSN
5961-01-443-3879
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4568A-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.72 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
8514992-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
8514992-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY DELICATE
III END ITEM IDENTIFICATION: 1260-01-432-8524
Related Searches:
MC5150-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MC5150-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MFG
INTERPOINT CORPORATION DBA CRANE ELECTRONICS-REDMOND
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY DELICATE
III END ITEM IDENTIFICATION: 1260-01-432-8524
Related Searches:
PK4519
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MFG
SERTECH LABORATORIES INC
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY DELICATE
III END ITEM IDENTIFICATION: 1260-01-432-8524
Related Searches:
PMF1016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MFG
OPTEK TECHNOLOGY INC
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY DELICATE
III END ITEM IDENTIFICATION: 1260-01-432-8524
Related Searches:
SD50001-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433889
NSN
5961-01-443-3889
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY DELICATE
III END ITEM IDENTIFICATION: 1260-01-432-8524
Related Searches:
S6025L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014433897
NSN
5961-01-443-3897
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
III END ITEM IDENTIFICATION: 1740-01-1253-8064
Related Searches:
152303
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014434095
NSN
5961-01-443-4095
MFG
TECHNOLOGY DYNAMICS INC. DBA NOVA ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5907691
TRANSISTOR
NSN, MFG P/N
5961014434390
NSN
5961-01-443-4390
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.577 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEARHARDNESSCRITICALITEM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
94-7436
TRANSISTOR
NSN, MFG P/N
5961014434390
NSN
5961-01-443-4390
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.577 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEARHARDNESSCRITICALITEM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
IXFM1063
TRANSISTOR
NSN, MFG P/N
5961014434390
NSN
5961-01-443-4390
MFG
IXYS CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.577 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEARHARDNESSCRITICALITEM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
NH5907691
TRANSISTOR
NSN, MFG P/N
5961014434390
NSN
5961-01-443-4390
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.577 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEARHARDNESSCRITICALITEM
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
58335
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014434483
NSN
5961-01-443-4483
MFG
RICE LAKE WEIGHING SYSTEMS INC. DBA POWELL SCALE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
KGF327A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014434483
NSN
5961-01-443-4483
MFG
S E ASSOCIATES LTD PARTNERSHIP DBA SCIENTIFIC AND ENGINEERING DIV CONDEC
Description
SEMICONDUCTOR DEVICE,DIODE
