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5961-01-397-4583
20 Products
0405180004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974583
NSN
5961-01-397-4583
0405180004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974583
NSN
5961-01-397-4583
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0404390005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974586
NSN
5961-01-397-4586
0404390005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974586
NSN
5961-01-397-4586
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405540001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974587
NSN
5961-01-397-4587
0405540001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974587
NSN
5961-01-397-4587
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405560001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974588
NSN
5961-01-397-4588
0405560001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974588
NSN
5961-01-397-4588
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405580002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974589
NSN
5961-01-397-4589
0405580002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974589
NSN
5961-01-397-4589
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405480008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974590
NSN
5961-01-397-4590
0405480008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974590
NSN
5961-01-397-4590
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405520000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974591
NSN
5961-01-397-4591
0405520000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974591
NSN
5961-01-397-4591
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0443310009
TRANSISTOR
NSN, MFG P/N
5961013974594
NSN
5961-01-397-4594
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
0442900007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974595
NSN
5961-01-397-4595
0442900007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974595
NSN
5961-01-397-4595
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0447070002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974596
NSN
5961-01-397-4596
0447070002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974596
NSN
5961-01-397-4596
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0448380005
TRANSISTOR
NSN, MFG P/N
5961013974597
NSN
5961-01-397-4597
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
0448350009
TRANSISTOR
NSN, MFG P/N
5961013974599
NSN
5961-01-397-4599
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
0448360004
TRANSISTOR
NSN, MFG P/N
5961013974600
NSN
5961-01-397-4600
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
0448370000
TRANSISTOR
NSN, MFG P/N
5961013974601
NSN
5961-01-397-4601
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
1N9638
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974680
NSN
5961-01-397-4680
MFG
TELCOM SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
400SEG110C
TRANSISTOR
NSN, MFG P/N
5961013974925
NSN
5961-01-397-4925
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: HYDRA 2.75 RKT AND M-158A1/M200A1 LAUNCHER, SURFACE TO SURFACE MISSILE
Related Searches:
MIS-30196-1
TRANSISTOR
NSN, MFG P/N
5961013974925
NSN
5961-01-397-4925
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: HYDRA 2.75 RKT AND M-158A1/M200A1 LAUNCHER, SURFACE TO SURFACE MISSILE
Related Searches:
2001141-001
TRANSISTOR
NSN, MFG P/N
5961013975544
NSN
5961-01-397-5544
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001141 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MGTM24N60D1
TRANSISTOR
NSN, MFG P/N
5961013975544
NSN
5961-01-397-5544
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001141 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SMC51216
TRANSISTOR
NSN, MFG P/N
5961013975544
NSN
5961-01-397-5544
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2001141 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
