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5961-01-380-1103
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78053
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
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783738
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013797471
NSN
5961-01-379-7471
783738
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013797471
NSN
5961-01-379-7471
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 6 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.788 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
CA3102E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013797471
NSN
5961-01-379-7471
CA3102E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013797471
NSN
5961-01-379-7471
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 6 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.788 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR
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845073
TRANSISTOR
NSN, MFG P/N
5961013797509
NSN
5961-01-379-7509
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.236 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 NOMINAL GATE TO SOURCE VOLTAGE
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J2929
TRANSISTOR
NSN, MFG P/N
5961013797509
NSN
5961-01-379-7509
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.236 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 NOMINAL GATE TO SOURCE VOLTAGE
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171-800-0002-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013797684
NSN
5961-01-379-7684
171-800-0002-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013797684
NSN
5961-01-379-7684
MFG
AYDIN DISPLAYS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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NTE552
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013798021
NSN
5961-01-379-8021
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N4116
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013799539
NSN
5961-01-379-9539
JANTX1N4116
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013799539
NSN
5961-01-379-9539
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4116-1
FEATURES PROVIDED: LOW NOISE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
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151-0950-00
TRANSISTOR
NSN, MFG P/N
5961013799629
NSN
5961-01-379-9629
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
BFQ32M
TRANSISTOR
NSN, MFG P/N
5961013799629
NSN
5961-01-379-9629
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
TRANSISTOR
Related Searches:
151-0951-00
TRANSISTOR
NSN, MFG P/N
5961013799664
NSN
5961-01-379-9664
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
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BFQ63
TRANSISTOR
NSN, MFG P/N
5961013799664
NSN
5961-01-379-9664
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
TRANSISTOR
Related Searches:
1138211G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013799683
NSN
5961-01-379-9683
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
JANTX1N750A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013799683
NSN
5961-01-379-9683
JANTX1N750A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013799683
NSN
5961-01-379-9683
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC
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6539081
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013800040
NSN
5961-01-380-0040
6539081
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013800040
NSN
5961-01-380-0040
MFG
NAVAL SEA SYSTEMS COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TERMINAL LUG
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SC3BH4F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013800040
NSN
5961-01-380-0040
SC3BH4F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013800040
NSN
5961-01-380-0040
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TERMINAL LUG
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A531A229-102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801031
NSN
5961-01-380-1031
A531A229-102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801031
NSN
5961-01-380-1031
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
OM1063STX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801031
NSN
5961-01-380-1031
OM1063STX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801031
NSN
5961-01-380-1031
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
8509112-450
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
8509112-450
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
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OM1155SFX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
OM1155SFX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013801103
NSN
5961-01-380-1103
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; AIRCRAFT, F-16
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-079AB
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MINIMUM AND 2.210 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8509112 DRAWING
VOLTAGE RATING IN VOLTS PER
