My Quote Request
No products added yet
5961-00-286-5419
20 Products
182-620-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865419
NSN
5961-00-286-5419
182-620-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865419
NSN
5961-00-286-5419
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4376
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-282
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/282 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
16763169-001
TRANSISTOR
NSN, MFG P/N
5961002847109
NSN
5961-00-284-7109
MFG
SYPRIS ELECTRONICS LLC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
925006-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002847608
NSN
5961-00-284-7608
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
MP3007
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002847608
NSN
5961-00-284-7608
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
1N145
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002850055
NSN
5961-00-285-0055
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N145
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1-811
NONDEFINITIVE SPEC/STD DATA: 1N145 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1A84194H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
1A84194H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXSPD25
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/446
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/446 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
8-20-236
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
8-20-236
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
MFG
ILLINOIS TOOL WKS INC LINAC DIV
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXSPD25
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/446
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/446 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
BR96A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
BR96A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
MFG
DIODES INC POWER COMPONENTS DIV
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXSPD25
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/446
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/446 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
JANSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
JANSPD25
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961002852219
NSN
5961-00-285-2219
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXSPD25
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/446
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.060 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 1.144 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/446 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
GS810HP1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002852222
NSN
5961-00-285-2222
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5188
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/424
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/424 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
JAN1N5188
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002852222
NSN
5961-00-285-2222
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5188
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/424
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/424 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SFM40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002852542
NSN
5961-00-285-2542
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
OVERALL LENGTH: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N3906
TRANSISTOR
NSN, MFG P/N
5961002864666
NSN
5961-00-286-4666
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
54000-90041-3
TRANSISTOR
NSN, MFG P/N
5961002864666
NSN
5961-00-286-4666
MFG
AAI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
FT3906
TRANSISTOR
NSN, MFG P/N
5961002864666
NSN
5961-00-286-4666
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
NS3906
TRANSISTOR
NSN, MFG P/N
5961002864666
NSN
5961-00-286-4666
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N5172
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865415
NSN
5961-00-286-5415
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2030111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865415
NSN
5961-00-286-5415
MFG
CEI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FD7194
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865419
NSN
5961-00-286-5419
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4376
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-282
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/282 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
G181-238-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865419
NSN
5961-00-286-5419
G181-238-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002865419
NSN
5961-00-286-5419
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4376
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-282
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/282 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
