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5961-01-322-3215
20 Products
KKE327AA
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013223215
NSN
5961-01-322-3215
KKE327AA
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013223215
NSN
5961-01-322-3215
MFG
DRS TECHNOLOGIES INC DBA D R S POWER & CONTROL TECHNOLOGIES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KKE327AA
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.650 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4321
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1909-25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222674
NSN
5961-01-322-2674
MFG
GOODRICH CONTROL SYSTEMS LTD T/A GOO ICH ENGINE CONTROL SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX79C27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222674
NSN
5961-01-322-2674
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZP-D 27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222674
NSN
5961-01-322-2674
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1909-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222675
NSN
5961-01-322-2675
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX79C13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222675
NSN
5961-01-322-2675
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZP-D 13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222675
NSN
5961-01-322-2675
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
60CDQ045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222676
NSN
5961-01-322-2676
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
77762842
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222676
NSN
5961-01-322-2676
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1948-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222677
NSN
5961-01-322-2677
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZV85C5V6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222677
NSN
5961-01-322-2677
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DZ15V60H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222677
NSN
5961-01-322-2677
MFG
WAYNE KERR ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7890072-206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223000
NSN
5961-01-322-3000
7890072-206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223000
NSN
5961-01-322-3000
MFG
DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 21.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4112-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
JANTX1N4112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223000
NSN
5961-01-322-3000
JANTX1N4112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223000
NSN
5961-01-322-3000
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 21.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4112-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
1958-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223001
NSN
5961-01-322-3001
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BYV27-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223001
NSN
5961-01-322-3001
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FX 2PFT2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223001
NSN
5961-01-322-3001
MFG
SEMTECH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1948-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223002
NSN
5961-01-322-3002
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZV85C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013223002
NSN
5961-01-322-3002
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
LO4321
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013223215
NSN
5961-01-322-3215
LO4321
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013223215
NSN
5961-01-322-3215
MFG
DLA LAND AND MARITIME
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KKE327AA
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.650 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4321
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
